MMBT4403K Equivalent & Substitute Parts

Part Overview

The MMBT4403K is a PNP bipolar junction transistor manufactured by onsemi, designed for surface mount applications in the SOT-23-3 package. This component operates at a maximum collector current of 600 mA, collector-emitter breakdown voltage of 40 V, and maximum power dissipation of 350 mW. The MMBT4403K is classified as obsolete, necessitating identification of active equivalent and substitute parts for ongoing design requirements and procurement needs.

Substiute Parts

MMBT4403K
onsemiIn Stock: 12156MMBT4403K Datasheet
MMBT4403K
Current Part
MMBT4403LT1G
onsemiIn Stock: 824352MMBT4403LT1G Datasheet
MMBT4403LT1G
Direct
MMBT4403LT3G
onsemiIn Stock: 46972MMBT4403LT3G Datasheet
MMBT4403LT3G
Direct
SMMBT4403LT1G
onsemiIn Stock: 54547SMMBT4403LT1G Datasheet
SMMBT4403LT1G
Direct
MMBT4403-7-F
Diodes IncorporatedIn Stock: 17425MMBT4403-7-F Datasheet
MMBT4403-7-F
Direct
MMBT4403-G
Comchip TechnologyIn Stock: 903MMBT4403-G Datasheet
MMBT4403-G
Direct
MMBT4403-TP
Micro Commercial CoIn Stock: 1793MMBT4403-TP Datasheet
MMBT4403-TP
Direct
PMBT4403,215
Nexperia USA Inc.In Stock: 27361PMBT4403,215 Datasheet
PMBT4403,215
Direct
PMBT4403Z
Nexperia USA Inc.In Stock: 30458PMBT4403Z Datasheet
PMBT4403Z
Direct
2SB1197KT146Q
Rohm SemiconductorIn Stock: 798632SB1197KT146Q Datasheet
2SB1197KT146Q
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2SB1197KT146R
Rohm SemiconductorIn Stock: 1024322SB1197KT146R Datasheet
2SB1197KT146R
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BC807-16-7-F
Diodes IncorporatedIn Stock: 15720BC807-16-7-F Datasheet
BC807-16-7-F
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BC807-40-7-F
Diodes IncorporatedIn Stock: 17132BC807-40-7-F Datasheet
BC807-40-7-F
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BC857B-7-F
Diodes IncorporatedIn Stock: 80349BC857B-7-F Datasheet
BC857B-7-F
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BC857BE6327HTSA1
Infineon TechnologiesIn Stock: 3446BC857BE6327HTSA1 Datasheet
BC857BE6327HTSA1
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BC857C-7-F
Diodes IncorporatedIn Stock: 155250BC857C-7-F Datasheet
BC857C-7-F
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BC857CE6327HTSA1
Infineon TechnologiesIn Stock: 6459BC857CE6327HTSA1 Datasheet
BC857CE6327HTSA1
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BCW68HTA
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BCX71JE6327HTSA1
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BCX71KE6327HTSA1
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FMMT720TA
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PMBT4403,235
Nexperia USA Inc.In Stock: 33957PMBT4403,235 Datasheet
PMBT4403,235
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SMBT3906E6327HTSA1
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Key Parameters

Parameter Value Unit
Transistor Type PNP
Current - Collector (Ic) Max 600 mA
Voltage - Collector Emitter Breakdown (Max) 40 V
Vce Saturation (Max) @ Ib, Ic 750mV @ 50mA, 500mA
DC Current Gain (hFE) Min @ Ic, Vce 100 @ 150mA, 2V
Power - Max 350 mW
Frequency - Transition 200 MHz
Operating Temperature Range -55 to 150 °C
Package / Case TO-236-3, SC-59, SOT-23-3
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the MMBT4403K is determined by strict electrical and mechanical parameter matching within the PNP bipolar transistor category. The following criteria establish substitution validity:

Primary Substitution Criteria:

  • Transistor Type: PNP
  • Current - Collector (Ic) Max: 600 mA minimum
  • Voltage - Collector Emitter Breakdown (Max): 40 V minimum
  • DC Current Gain (hFE) Min @ Ic, Vce: 100 @ 150mA, 2V minimum
  • Frequency - Transition: 200 MHz minimum
  • Operating Temperature Range: -55°C to 150°C minimum
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Mounting Type: Surface Mount

Direct Equivalents are onsemi MMBT4403 variants with identical base product numbers and electrical specifications, differing only in packaging format (Cut Tape, Tape & Reel) or product status transitions.

Cross-Manufacturer Equivalents from Diodes Incorporated, Nexperia USA Inc., and Micro Commercial Co maintain identical electrical parameters and package specifications while offering active product status and compliance certifications.

Similar Parts from Rohm Semiconductor (2SB1197KT146Q, 2SB1197KT146R) provide functional equivalence with modified electrical parameters within acceptable design margins, including higher collector current capability (800 mA) and lower collector-emitter breakdown voltage (32 V).

Parameter Comparison

Part Number Manufacturer Ic Max (mA) Vce Breakdown (V) Power Max (mW) hFE Min @ Ic, Vce Frequency (MHz) Product Status Package
MMBT4403K onsemi 600 40 350 100 @ 150mA, 2V 200 Obsolete SOT-23-3
MMBT4403LT1G onsemi 600 40 300 100 @ 150mA, 2V 200 Active SOT-23-3
MMBT4403LT3G onsemi 600 40 300 100 @ 150mA, 2V 200 Active SOT-23-3
SMMBT4403LT1G onsemi 600 40 300 100 @ 150mA, 2V 200 Active SOT-23-3
MMBT4403-7-F Diodes Incorporated 600 40 300 100 @ 150mA, 2V 200 Active SOT-23-3
MMBT4403-G Comchip Technology 600 40 300 100 @ 150mA, 2V 200 Active SOT-23-3
MMBT4403-TP Micro Commercial Co 600 40 350 100 @ 150mA, 2V 200 Active SOT-23-3
PMBT4403,215 Nexperia USA Inc. 600 40 250 100 @ 150mA, 2V 200 Active SOT-23-3
PMBT4403Z Nexperia USA Inc. 600 40 250 100 @ 150mA, 2V 200 Active SOT-23-3
2SB1197KT146Q Rohm Semiconductor 800 32 200 120 @ 100mA, 3V 200 Active SOT-23-3
2SB1197KT146R Rohm Semiconductor 800 32 200 180 @ 100mA, 3V 200 Active SOT-23-3

Engineering Selection Recommendations

Direct Replacement (Preferred): MMBT4403LT1G, MMBT4403LT3G, and SMMBT4403LT1G from onsemi are direct functional equivalents with active product status. These parts maintain identical electrical specifications to the MMBT4403K with the exception of reduced maximum power dissipation (300 mW versus 350 mW). Selection between these variants depends on packaging requirements: MMBT4403LT1G and SMMBT4403LT1G are available in Cut Tape format, while MMBT4403LT3G is supplied in Tape & Reel format. All three variants are ROHS3 compliant and carry MSL 1 (Unlimited) moisture sensitivity rating.

Cross-Manufacturer Equivalents: MMBT4403-7-F (Diodes Incorporated), MMBT4403-G (Comchip Technology), MMBT4403-TP (Micro Commercial Co), PMBT4403,215, and PMBT4403Z (Nexperia USA Inc.) provide electrical equivalence with active product status. MMBT4403-7-F carries AEC-Q101 automotive qualification. PMBT4403,215 and PMBT4403Z are AEC-Q101 qualified automotive-grade components with reduced maximum power dissipation (250 mW). All cross-manufacturer options maintain SOT-23-3 package compatibility and ROHS3 compliance.

Alternative Functional Equivalents: 2SB1197KT146Q and 2SB1197KT146R from Rohm Semiconductor provide functional substitution with modified electrical parameters. These parts support higher collector current (800 mA) and exhibit lower collector-emitter breakdown voltage (32 V). Selection of these alternatives is appropriate when design margins accommodate the reduced voltage rating and when the increased current capability provides system benefit.

Frequently Asked Questions (FAQ)

Q: Can MMBT4403LT1G directly replace MMBT4403K in existing designs?

A: Yes. MMBT4403LT1G maintains identical electrical specifications for collector current (600 mA), collector-emitter breakdown voltage (40 V), DC current gain (100 @ 150mA, 2V), and transition frequency (200 MHz). The primary difference is reduced maximum power dissipation (300 mW versus 350 mW). Designs operating within 300 mW power budget experience no functional impact. Designs requiring the full 350 mW capability should select MMBT4403-TP from Micro Commercial Co.

Q: What is the difference between MMBT4403LT1G and MMBT4403LT3G?

A: Both parts are onsemi MMBT4403 variants with identical electrical specifications. The difference is packaging format: MMBT4403LT1G is supplied in Cut Tape (CT) & Digi-Reel® format with 824,300 pieces in stock, while MMBT4403LT3G is supplied in Tape & Reel (TR) format with 46,872 pieces in stock. Selection depends on assembly line requirements and inventory availability.

Q: Are Nexperia PMBT4403,215 and PMBT4403Z suitable replacements?

A: Yes, with design consideration. Both Nexperia parts maintain electrical equivalence for collector current, breakdown voltage, and DC current gain. Maximum power dissipation is reduced to 250 mW compared to the MMBT4403K specification of 350 mW. Both parts carry AEC-Q101 automotive qualification and are ROHS3 compliant. Selection is appropriate for designs operating within 250 mW power budget or for automotive applications requiring AEC-Q101 certification.

Q: Can Rohm 2SB1197KT146Q or 2SB1197KT146R replace MMBT4403K?

A: These parts provide functional equivalence with modified electrical parameters. Collector current capability is higher (800 mA versus 600 mA), but collector-emitter breakdown voltage is lower (32 V versus 40 V). DC current gain specifications differ: 2SB1197KT146Q specifies 120 @ 100mA, 3V while 2SB1197KT146R specifies 180 @ 100mA, 3V. Selection is appropriate when design margins accommodate the reduced voltage rating and when increased current capability provides system benefit.

Q: What packaging options are available for MMBT4403 equivalents?

A: All substitute parts maintain SOT-23-3 (TO-236-3, SC-59) surface mount package compatibility with MMBT4403K. Packaging format variations include Cut Tape (CT) & Digi-Reel®, Tape & Reel (TR), and supplier-specific formats. Package selection does not affect electrical performance and depends on assembly line equipment and procurement requirements.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All active substitute parts listed carry ROHS3 compliance certification. The obsolete MMBT4403K does not specify ROHS status. All substitute parts maintain MSL 1 (Unlimited) moisture sensitivity level, indicating no special moisture handling requirements during storage or assembly.

Q: Which substitute part offers the highest inventory availability?

A: MMBT4403LT1G from onsemi offers the highest inventory availability with 824,300 pieces in stock. MMBT4403LT3G provides 46,872 pieces, SMMBT4403LT1G provides 54,500 pieces, and PMBT4403Z provides 30,398 pieces. Inventory levels should be verified with suppliers for current availability.

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