MMBT4403-D87Z Equivalent & Substitute Parts

Part Overview

The MMBT4403-D87Z is a PNP bipolar junction transistor manufactured by onsemi, designed for general-purpose switching and amplification applications. This device features a 40 V collector-emitter breakdown voltage, 600 mA maximum collector current, and 200 MHz transition frequency in a surface mount SOT-23-3 package. The part is currently listed as obsolete, necessitating identification of active equivalent and substitute components that maintain electrical and mechanical compatibility for ongoing production and repair applications.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP	—
Collector Current (Max)	600	mA
Collector-Emitter Breakdown Voltage (Max)	40	V
Vce Saturation (Max)	750 mV @ 50 mA, 500 mA	—
DC Current Gain (hFE Min)	100 @ 150 mA, 2 V	—
Power Dissipation (Max)	350	mW
Transition Frequency	200	MHz
Operating Temperature Range	−55 to 150	°C
Package Type	SOT-23-3 (TO-236)	—
Mounting Type	Surface Mount	—
Moisture Sensitivity Level	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the MMBT4403-D87Z is determined by strict adherence to the following electrical and mechanical parameters:

Critical Matching Parameters:

Transistor polarity: PNP
Collector current rating: 600 mA minimum
Collector-emitter breakdown voltage: 40 V minimum
DC current gain (hFE): 100 minimum at specified test conditions
Transition frequency: 200 MHz minimum
Package: SOT-23-3 (TO-236) surface mount configuration
Operating temperature range: −55°C to 150°C minimum

Substitution Categories:

Direct Equivalents (Identical Base Product Number): Parts sharing the MMBT4403 base designation with active product status and matching electrical specifications. These include onsemi variants (MMBT4403LT1G, MMBT4403LT3G), onsemi screened variant (SMMBT4403LT1G), and cross-manufacturer equivalents (Diodes Incorporated MMBT4403-7-F, Comchip Technology MMBT4403-G, Micro Commercial Co MMBT4403-TP).

Functional Equivalents (Different Base Product Number): Parts meeting all electrical parameters but with different manufacturer base designations. These include Rohm Semiconductor MMST4403T146 and Nexperia USA Inc. variants (PMBT4403,215 and PMBT4403Z).

Similar Parts (Parameter Variations): The Rohm Semiconductor 2SB1197KT146Q exhibits higher collector current (800 mA) and lower breakdown voltage (32 V), representing a similar but not identical substitute suitable only for applications with reduced voltage requirements.

Parameter Comparison

Part Number	Manufacturer	Ic (Max) mA	Vce(br) V	Vce Sat (Max) mV	hFE (Min)	Power (Max) mW	Freq MHz	Temp Range °C	Package	Status
MMBT4403-D87Z	onsemi	600	40	750 @ 50mA, 500mA	100 @ 150mA, 2V	350	200	−55 to 150	SOT-23-3	Obsolete
MMBT4403LT1G	onsemi	600	40	750 @ 50mA, 500mA	100 @ 150mA, 2V	300	200	−55 to 150	SOT-23-3	Active
MMBT4403LT3G	onsemi	600	40	750 @ 50mA, 500mA	100 @ 150mA, 2V	300	200	−55 to 150	SOT-23-3	Active
SMMBT4403LT1G	onsemi	600	40	750 @ 50mA, 500mA	100 @ 150mA, 2V	300	200	−55 to 150	SOT-23-3	Active
MMBT4403-7-F	Diodes Incorporated	600	40	750 @ 50mA, 500mA	100 @ 150mA, 2V	300	200	−55 to 150	SOT-23-3	Active
MMBT4403-G	Comchip Technology	600	40	400 @ 15mA, 150mA	100 @ 150mA, 2V	300	200	−55 to 150	SOT-23-3	Active
MMBT4403-TP	Micro Commercial Co	600	40	750 @ 50mA, 500mA	100 @ 150mA, 2V	350	200	−55 to 150	SOT-23-3	Active
MMST4403T146	Rohm Semiconductor	600	40	750 @ 50mA, 500mA	100 @ 150mA, 1V	200	200	−55 to 150	SOT-23-3	Active
PMBT4403,215	Nexperia USA Inc.	600	40	750 @ 50mA, 500mA	100 @ 150mA, 2V	250	200	−55 to 150	SOT-23-3	Active
PMBT4403Z	Nexperia USA Inc.	600	40	750 @ 50mA, 500mA	100 @ 150mA, 2V	250	200	−55 to 150	SOT-23-3	Active
2SB1197KT146Q	Rohm Semiconductor	800	32	500 @ 50mA, 500mA	120 @ 100mA, 3V	200	200	−55 to 150	SOT-23-3	Active

Engineering Selection Recommendations

Primary Substitutes (Recommended for Direct Replacement):

The onsemi MMBT4403LT1G and MMBT4403LT3G are the preferred direct replacements for the obsolete MMBT4403-D87Z. Both parts maintain identical electrical specifications, matching collector current, breakdown voltage, and DC current gain parameters. The primary difference is packaging format: MMBT4403LT1G is supplied in Cut Tape and Digi-Reel formats, while MMBT4403LT3G is supplied in Tape & Reel format. Both are RoHS3 compliant and carry active product status with substantial inventory availability (824,300 and 46,872 units respectively).

The onsemi SMMBT4403LT1G represents an alternative onsemi source with identical electrical performance and active status, supplied in Cut Tape and Digi-Reel packaging with 54,500 units in stock.

Cross-Manufacturer Equivalents:

The Diodes Incorporated MMBT4403-7-F provides electrical equivalence with the added qualification of AEC-Q101 automotive certification, suitable for applications requiring automotive-grade components. This part is supplied in Tape & Reel format with 17,380 units available.

The Micro Commercial Co MMBT4403-TP matches the original 350 mW power rating and maintains all electrical specifications, supplied in Tape & Reel format with 1,736 units in stock.

Functional Equivalents with Specification Variations:

The Rohm Semiconductor MMST4403T146 meets all critical electrical parameters but features reduced maximum power dissipation (200 mW versus 350 mW). This part is suitable for applications where power dissipation does not exceed 200 mW. It carries RoHS3 compliance and AEC-Q101 automotive qualification with 47,100 units available.

The Nexperia USA Inc. PMBT4403,215 and PMBT4403Z both feature 250 mW maximum power dissipation and carry AEC-Q101 automotive qualification. These parts are suitable for applications with power dissipation requirements between 250 and 350 mW. Inventory availability is 27,300 and 30,398 units respectively.

Limited Substitution (Parameter Deviations):

The Rohm Semiconductor 2SB1197KT146Q exhibits reduced collector-emitter breakdown voltage (32 V versus 40 V) and increased collector current rating (800 mA versus 600 mA). This part is suitable only for applications where the maximum operating voltage does not exceed 32 V and where the higher current capability does not introduce design complications.

Frequently Asked Questions (FAQ)

Q: Can MMBT4403LT1G directly replace MMBT4403-D87Z without circuit modification?

A: Yes. The MMBT4403LT1G maintains identical electrical specifications for collector current, breakdown voltage, DC current gain, and transition frequency. The primary difference is reduced maximum power dissipation (300 mW versus 350 mW). Direct substitution is valid for applications where power dissipation does not exceed 300 mW.

Q: What is the difference between MMBT4403LT1G and MMBT4403LT3G?

A: Both parts are electrically identical. The difference is packaging format: MMBT4403LT1G is supplied in Cut Tape and Digi-Reel, while MMBT4403LT3G is supplied in Tape & Reel. Selection depends on assembly line requirements and tape format compatibility.

Q: Is the Comchip Technology MMBT4403-G a suitable replacement?

A: The MMBT4403-G meets all critical electrical parameters but specifies different Vce saturation test conditions (400 mV @ 15 mA, 150 mA versus 750 mV @ 50 mA, 500 mA). This indicates different saturation characteristics under specific bias conditions. Substitution is valid for general-purpose switching applications but requires verification for circuits sensitive to saturation voltage behavior.

Q: Why does the Rohm MMST4403T146 have lower power dissipation?

A: The MMST4403T146 is rated for 200 mW maximum power dissipation compared to 350 mW for the original part. This reflects different thermal design or package thermal characteristics. Substitution is valid only for applications where actual power dissipation remains below 200 mW.

Q: Can the 2SB1197KT146Q replace MMBT4403-D87Z?

A: The 2SB1197KT146Q exhibits reduced collector-emitter breakdown voltage (32 V versus 40 V) and higher collector current (800 mA versus 600 mA). Substitution is limited to applications where maximum operating voltage does not exceed 32 V. This part is not recommended as a general replacement.

Q: What does RoHS3 compliance mean for substitution?

A: RoHS3 compliance indicates the part meets Restriction of Hazardous Substances Directive requirements. All active substitute parts listed carry RoHS3 compliance, ensuring environmental and regulatory compatibility with modern manufacturing standards.

Q: Are automotive-qualified parts (AEC-Q101) required for this application?

A: AEC-Q101 qualification is required only for automotive applications. The Diodes Incorporated MMBT4403-7-F, Rohm MMST4403T146, and Nexperia variants (PMBT4403,215 and PMBT4403Z) carry this qualification. For non-automotive applications, automotive-qualified parts are acceptable but not necessary.

Q: What is the significance of the SOT-23-3 package specification?

A: SOT-23-3 (also designated TO-236-3 or SC-59) is the physical package format. All listed substitutes maintain this package type, ensuring mechanical and thermal compatibility with existing PCB layouts and assembly processes. Package compatibility is mandatory for direct substitution.

Q: How does transition frequency affect substitution?

A: All substitute parts maintain 200 MHz transition frequency, matching the original specification. This parameter determines high-frequency switching capability. Substitution is valid only for parts meeting or exceeding this frequency specification.

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