MMBT3416 Equivalent & Substitute Parts

Part Overview

The MMBT3416 is an NPN bipolar junction transistor manufactured by onsemi, rated for 50 V collector-emitter breakdown voltage and 500 mA maximum collector current in a surface mount SOT-23-3 package. This device is classified as obsolete, necessitating identification of active equivalent and substitute components for new designs and production continuity. Substitute parts must maintain electrical compatibility within the specified parameter ranges while offering active product status and current manufacturing availability.

Substiute Parts

MMBT3416
onsemiIn Stock: 12486MMBT3416 Datasheet
MMBT3416
Current Part
MMBTA05LT1G
onsemiIn Stock: 305480MMBTA05LT1G Datasheet
MMBTA05LT1G
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MMBT2484LT1G
onsemiIn Stock: 9298MMBT2484LT1G Datasheet
MMBT2484LT1G
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MMBT2484LT3G
onsemiIn Stock: 30521MMBT2484LT3G Datasheet
MMBT2484LT3G
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MMBT3904LT1G
onsemiIn Stock: 605202MMBT3904LT1G Datasheet
MMBT3904LT1G
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MMBT3904LT3G
onsemiIn Stock: 360379MMBT3904LT3G Datasheet
MMBT3904LT3G
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MMBT6429LT1G
onsemiIn Stock: 155261MMBT6429LT1G Datasheet
MMBT6429LT1G
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SMMBT3904LT1G
onsemiIn Stock: 287321SMMBT3904LT1G Datasheet
SMMBT3904LT1G
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SMMBT3904LT3G
onsemiIn Stock: 400429SMMBT3904LT3G Datasheet
SMMBT3904LT3G
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2PD602AQL,235
Nexperia USA Inc.In Stock: 10972PD602AQL,235 Datasheet
2PD602AQL,235
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2SD1484KT146Q
Rohm SemiconductorIn Stock: 84912SD1484KT146Q Datasheet
2SD1484KT146Q
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2SD1484KT146R
Rohm SemiconductorIn Stock: 2617542SD1484KT146R Datasheet
2SD1484KT146R
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BC817,235
Nexperia USA Inc.In Stock: 56510BC817,235 Datasheet
BC817,235
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BC817-25,215
NXP USA Inc.In Stock: 1000481BC817-25,215 Datasheet
BC817-25,215
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BC817-40,215
Nexperia USA Inc.In Stock: 3209BC817-40,215 Datasheet
BC817-40,215
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BC817-40,235
Nexperia USA Inc.In Stock: 514812BC817-40,235 Datasheet
BC817-40,235
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BC817-40-7-F
Diodes IncorporatedIn Stock: 20370BC817-40-7-F Datasheet
BC817-40-7-F
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BC817-40Q-13-F
Diodes IncorporatedIn Stock: 25265BC817-40Q-13-F Datasheet
BC817-40Q-13-F
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BC817-40Q-7-F
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BC817-40Q-7-F
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BC817K-40R
Nexperia USA Inc.In Stock: 7588BC817K-40R Datasheet
BC817K-40R
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BC817K-40VL
Nexperia USA Inc.In Stock: 6459BC817K-40VL Datasheet
BC817K-40VL
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BCX19,235
Nexperia USA Inc.In Stock: 8591BCX19,235 Datasheet
BCX19,235
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BCX19T116
Rohm SemiconductorIn Stock: 1670BCX19T116 Datasheet
BCX19T116
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Key Parameters

Parameter MMBT3416 Unit
Transistor Type NPN
Current - Collector (Ic) Max 500 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Power - Max 350 mW
Mounting Type Surface Mount
Package / Case SOT-23-3
Product Status Obsolete

Substitute Part Grouping Explanation

Substitute parts for the MMBT3416 are grouped based on electrical parameter compatibility within the following criteria:

Direct Substitutes (Electrical Equivalence): Parts that maintain the same collector current rating (500 mA) and equal or higher collector-emitter breakdown voltage (≥50 V), with matching SOT-23-3 packaging and active product status.

Similar Substitutes (Functional Compatibility): Parts that operate within the same voltage class (40–60 V) and package format but with reduced collector current ratings (100–200 mA) or modified power dissipation characteristics. These are suitable for applications where the full 500 mA current capability is not required.

Key Parameters for Substitution Assessment:

  • Collector current rating (Ic Max)
  • Collector-emitter breakdown voltage (VCEO Max)
  • Power dissipation (P Max)
  • Package type (SOT-23-3 / TO-236-3)
  • Product status (Active vs. Obsolete)
  • RoHS and REACH compliance

Parameter Comparison

Part Number Manufacturer Ic Max (mA) VCEO Max (V) P Max (mW) Package Product Status RoHS Status
MMBT3416 onsemi 500 50 350 SOT-23-3 Obsolete
MMBTA05LT1G onsemi 500 60 225 SOT-23-3 Active ROHS3 Compliant
2PD602AQL,235 Nexperia USA Inc. 500 50 250 SOT-23-3 Active ROHS3 Compliant
2SD1484KT146Q Rohm Semiconductor 500 50 200 SOT-23-3 Active ROHS3 Compliant
MMBT3904LT1G onsemi 200 40 300 SOT-23-3 Active ROHS3 Compliant
MMBT3904LT3G onsemi 200 40 300 SOT-23-3 Active ROHS3 Compliant
MMBT2484LT1G onsemi 100 60 225 SOT-23-3 Active ROHS3 Compliant
MMBT2484LT3G onsemi 100 60 225 SOT-23-3 Active ROHS3 Compliant
MMBT6429LT1G onsemi 200 45 225 SOT-23-3 Active ROHS3 Compliant
SMMBT3904LT1G onsemi 200 40 300 SOT-23-3 Active ROHS3 Compliant
SMMBT3904LT3G onsemi 200 40 300 SOT-23-3 Active ROHS3 Compliant

Engineering Selection Recommendations

Direct Electrical Equivalents (500 mA, 50 V Class):

The MMBTA05LT1G, 2PD602AQL,235, and 2SD1484KT146Q are direct functional replacements for the MMBT3416. All three maintain the 500 mA collector current rating and 50 V minimum collector-emitter breakdown voltage. The MMBTA05LT1G offers the highest voltage rating (60 V) and is manufactured by onsemi, providing design continuity. The 2PD602AQL,235 from Nexperia matches the exact 50 V specification and includes AEC-Q101 automotive qualification. The 2SD1484KT146Q from Rohm Semiconductor also meets the 50 V requirement with 250 MHz transition frequency capability.

All three candidates are ROHS3 compliant and carry active product status, ensuring long-term availability and supply chain stability.

Current-Limited Alternatives (200 mA, 40–45 V Class):

The MMBT3904LT1G, MMBT3904LT3G, MMBT6429LT1G, SMMBT3904LT1G, and SMMBT3904LT3G are suitable for applications where collector current does not exceed 200 mA. These parts operate within the 40–45 V voltage range and are all active products with ROHS3 compliance. The SMMBT3904 variants include AEC-Q101 automotive qualification, appropriate for automotive-grade applications.

Low-Current Alternatives (100 mA, 60 V Class):

The MMBT2484LT1G and MMBT2484LT3G are appropriate for low-current signal switching applications requiring maximum 100 mA collector current. Both offer 60 V collector-emitter breakdown voltage and are active products with ROHS3 compliance.

Frequently Asked Questions (FAQ)

Q: Can the MMBTA05LT1G directly replace the MMBT3416 in all applications?

A: The MMBTA05LT1G maintains electrical compatibility for applications requiring up to 500 mA collector current and 50 V operation. The higher 60 V rating provides additional voltage margin. However, the reduced power dissipation (225 mW vs. 350 mW) must be evaluated against circuit thermal requirements. Both devices use identical SOT-23-3 packaging and pinout.

Q: What is the difference between MMBT3904LT1G and SMMBT3904LT1G?

A: Both parts share identical electrical specifications (200 mA, 40 V, 300 mW, 300 MHz). The SMMBT3904LT1G is qualified to AEC-Q101 automotive standards, making it suitable for automotive applications. Selection depends on application requirements and qualification mandates.

Q: Are MMBT3904LT1G and MMBT3904LT3G interchangeable?

A: Yes. Both parts have identical electrical parameters and SOT-23-3 packaging. The designation difference (LT1G vs. LT3G) reflects packaging format variations (Cut Tape vs. Tape & Reel). Electrical performance and pinout are equivalent.

Q: Why does the 2PD602AQL,235 have lower power dissipation (250 mW) than the MMBT3416 (350 mW)?

A: The 2PD602AQL,235 is rated for 250 mW maximum power dissipation while maintaining 500 mA collector current and 50 V breakdown voltage. This reflects different thermal design characteristics. Circuit thermal analysis must confirm the lower power rating is acceptable for the intended application.

Q: Can I use MMBT2484LT1G in place of MMBT3416?

A: The MMBT2484LT1G is limited to 100 mA maximum collector current, compared to the MMBT3416's 500 mA rating. Substitution is only valid for applications where collector current does not exceed 100 mA. The 60 V voltage rating exceeds the MMBT3416's 50 V specification, providing voltage compatibility.

Q: What does ROHS3 compliance mean for component selection?

A: ROHS3 compliance indicates the component meets Restriction of Hazardous Substances Directive requirements, restricting lead, cadmium, mercury, and other hazardous materials. All active substitute parts listed are ROHS3 compliant, ensuring regulatory alignment with modern manufacturing standards.

Q: Are there packaging differences between SOT-23-3 and TO-236-3 designations?

A: SOT-23-3 and TO-236-3 refer to the same physical package format. Both designations describe a three-lead surface mount transistor package with identical pinout and footprint. The terms are used interchangeably in industry documentation.

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