MMBT2907A-7 Equivalent & Substitute Parts

Part Overview

The MMBT2907A-7 is a PNP bipolar junction transistor manufactured by Diodes Incorporated, designed for general-purpose switching and amplification applications. This device features a 60 V collector-emitter breakdown voltage, 600 mA maximum collector current, and 200 MHz transition frequency in a surface mount SOT-23-3 package. The part is classified as obsolete, necessitating identification of active equivalent and substitute components for new designs and ongoing production requirements. Substitute parts must maintain electrical compatibility within the specified parameter ranges while offering active product status and improved availability.

Substiute Parts

MMBT2907A-7
Diodes IncorporatedIn Stock: 1421MMBT2907A-7 Datasheet
MMBT2907A-7
Current Part
MMST2907A-7-F
Diodes IncorporatedIn Stock: 15883MMST2907A-7-F Datasheet
MMST2907A-7-F
MFR Recommended
MMBT2907A-7-F
Diodes IncorporatedIn Stock: 125351MMBT2907A-7-F Datasheet
MMBT2907A-7-F
Parametric Equivalent
BC856,215
Nexperia USA Inc.In Stock: 94258BC856,215 Datasheet
BC856,215
MFR Recommended
BC856A,215
Nexperia USA Inc.In Stock: 96215BC856A,215 Datasheet
BC856A,215
MFR Recommended
BC856ALT1G
onsemiIn Stock: 68447BC856ALT1G Datasheet
BC856ALT1G
MFR Recommended
BC856B,215
Nexperia USA Inc.In Stock: 2146BC856B,215 Datasheet
BC856B,215
MFR Recommended
BC856B,235
NXP USA Inc.In Stock: 27336BC856B,235 Datasheet
BC856B,235
MFR Recommended
BC856B-TP
Micro Commercial CoIn Stock: 5346BC856B-TP Datasheet
BC856B-TP
MFR Recommended
BC856BLT1G
onsemiIn Stock: 1495322BC856BLT1G Datasheet
BC856BLT1G
MFR Recommended
BC856BLT3G
onsemiIn Stock: 130977BC856BLT3G Datasheet
BC856BLT3G
MFR Recommended
BCW68FR
Nexperia USA Inc.In Stock: 6816BCW68FR Datasheet
BCW68FR
MFR Recommended
BCW68FVL
Nexperia USA Inc.In Stock: 11040BCW68FVL Datasheet
BCW68FVL
MFR Recommended
BCW68GR
Nexperia USA Inc.In Stock: 3234BCW68GR Datasheet
BCW68GR
MFR Recommended
BCW68GVL
Nexperia USA Inc.In Stock: 13403BCW68GVL Datasheet
BCW68GVL
MFR Recommended
BCW89,215
Nexperia USA Inc.In Stock: 24265BCW89,215 Datasheet
BCW89,215
MFR Recommended
BSR16
Fairchild SemiconductorIn Stock: 42094BSR16 Datasheet
BSR16
MFR Recommended
BSR16,215
Nexperia USA Inc.In Stock: 5608BSR16,215 Datasheet
BSR16,215
MFR Recommended
CMPT2907AE TR PBFREE
Central Semiconductor CorpIn Stock: 25493CMPT2907AE TR PBFREE Datasheet
CMPT2907AE TR PBFREE
MFR Recommended
FMMT591-TP
Micro Commercial CoIn Stock: 9232FMMT591-TP Datasheet
FMMT591-TP
MFR Recommended
FSB660A
onsemiIn Stock: 20500FSB660A Datasheet
FSB660A
MFR Recommended
MMBT2907A-G
Comchip TechnologyIn Stock: 4050MMBT2907A-G Datasheet
MMBT2907A-G
MFR Recommended
MMBT2907A-TP
Micro Commercial CoIn Stock: 2269MMBT2907A-TP Datasheet
MMBT2907A-TP
MFR Recommended
MMBT2907A-TP-HF
Micro Commercial CoIn Stock: 1162MMBT2907A-TP-HF Datasheet
MMBT2907A-TP-HF
MFR Recommended
MMBT2907ALT1HTSA1
Infineon TechnologiesIn Stock: 19943MMBT2907ALT1HTSA1 Datasheet
MMBT2907ALT1HTSA1
MFR Recommended
MMBT2907AT-TP
Micro Commercial CoIn Stock: 5227MMBT2907AT-TP Datasheet
MMBT2907AT-TP
MFR Recommended
MMST2907A-TP
Micro Commercial CoIn Stock: 2077MMST2907A-TP Datasheet
MMST2907A-TP
MFR Recommended
NSVBCW68GLT1G
onsemiIn Stock: 111242NSVBCW68GLT1G Datasheet
NSVBCW68GLT1G
MFR Recommended
PMBT2907,215
NXP USA Inc.In Stock: 354089PMBT2907,215 Datasheet
PMBT2907,215
MFR Recommended
PMBT2907A,215
NXP SemiconductorsIn Stock: 6135PMBT2907A,215 Datasheet
PMBT2907A,215
MFR Recommended
PMBT2907A,235
Nexperia USA Inc.In Stock: 14921PMBT2907A,235 Datasheet
PMBT2907A,235
MFR Recommended
SMBT2907AE6327HTSA1
Infineon TechnologiesIn Stock: 4171SMBT2907AE6327HTSA1 Datasheet
SMBT2907AE6327HTSA1
MFR Recommended
MMBT2907ALT1G
onsemiIn Stock: 1598431MMBT2907ALT1G Datasheet
MMBT2907ALT1G
Parametric Equivalent
MMBT2907ALT3G
onsemiIn Stock: 889099MMBT2907ALT3G Datasheet
MMBT2907ALT3G
Parametric Equivalent
SMMBT2907ALT1G
onsemiIn Stock: 35410SMMBT2907ALT1G Datasheet
SMMBT2907ALT1G
Parametric Equivalent
SMMBT2907ALT3G
onsemiIn Stock: 35469SMMBT2907ALT3G Datasheet
SMMBT2907ALT3G
Parametric Equivalent

Key Parameters

Parameter Value Unit
Transistor Type PNP
Collector Current (Max) 600 mA
Collector-Emitter Breakdown Voltage (Max) 60 V
Vce Saturation (Max) 1.6 V @ 50mA, 500mA
DC Current Gain (hFE Min) 100 @ 150mA, 10V
Power Dissipation (Max) 300 mW
Transition Frequency 200 MHz
Operating Temperature Range -55 to 150 °C
Package Type SOT-23-3
Grade Automotive
Qualification AEC-Q101

Substitute Part Grouping Explanation

Substitute parts for the MMBT2907A-7 are categorized based on electrical parameter compatibility and product status. The primary substitution criterion is the ability to handle the specified collector current (600 mA maximum) and collector-emitter breakdown voltage (60 V minimum). Secondary criteria include transition frequency, power dissipation capability, and package compatibility.

Direct Parametric Equivalents maintain all critical electrical parameters within the original specification range, including 600 mA collector current, 60 V breakdown voltage, 200 MHz transition frequency, and 300 mW power dissipation. These parts are suitable for direct replacement in existing designs.

Functional Equivalents provide reduced collector current capability (100 mA maximum) or reduced power dissipation (250 mW) compared to the original part. These substitutes are applicable only in circuits where the lower current and power ratings are acceptable. The higher collector-emitter breakdown voltage (65 V) provides additional design margin.

Package Variants include SOT-323 and alternative SOT-23 configurations from different manufacturers. Package selection depends on PCB layout constraints and assembly process compatibility.

Substitution logic is based strictly on the following parameters:

  • Transistor polarity (PNP)
  • Maximum collector current rating
  • Collector-emitter breakdown voltage
  • Power dissipation capability
  • Transition frequency
  • Operating temperature range
  • Surface mount package type
  • Product status (active vs. obsolete)
  • RoHS and automotive qualification compliance

Parameter Comparison

Part Number Manufacturer Ic (Max) mA Vce(BR) V Power mW fT MHz Package Status RoHS
MMBT2907A-7 Diodes Inc. 600 60 300 200 SOT-23-3 Obsolete Non-compliant
MMST2907A-7-F Diodes Inc. 600 60 200 200 SOT-323 Active ROHS3
MMBT2907A-7-F Diodes Inc. 600 60 300 200 SOT-23-3 Active ROHS3
BC856,215 Nexperia USA 100 65 250 100 TO-236AB Active ROHS3
BC856A,215 Nexperia USA 100 65 250 100 TO-236AB Active ROHS3
BC856ALT1G onsemi 100 65 300 100 SOT-23-3 Active ROHS3
BC856B,215 Nexperia USA 100 65 250 100 TO-236AB Active ROHS3
BC856B,235 NXP USA 100 65 250 100 SOT-23 Active
BC856B-TP Micro Commercial 100 65 310 200 SOT-23 Active ROHS3
BC856BLT1G onsemi 100 65 300 100 SOT-23-3 Active ROHS3
BC856BLT3G onsemi 100 65 300 100 SOT-23-3 Active ROHS3

Engineering Selection Recommendations

Direct Replacement (Parametric Equivalent)

The MMBT2907A-7-F from Diodes Incorporated is the primary direct replacement for the obsolete MMBT2907A-7. This part maintains identical electrical specifications: 600 mA collector current, 60 V breakdown voltage, 200 MHz transition frequency, and 300 mW power dissipation. The MMBT2907A-7-F is active in production, RoHS3 compliant, and available in both cut tape and tape & reel packaging formats. This part is suitable for direct substitution in all applications where the original MMBT2907A-7 was specified.

The MMST2907A-7-F from Diodes Incorporated provides equivalent electrical performance but in a smaller SOT-323 package. This variant is appropriate for space-constrained PCB layouts. Power dissipation is reduced to 200 mW, which may limit applicability in high-power switching circuits. This part is active, RoHS3 compliant, and carries automotive AEC-Q101 qualification.

Functional Equivalents (Reduced Current Rating)

The BC856 series from Nexperia USA Inc. and onsemi provides PNP transistor functionality with reduced collector current capability (100 mA maximum versus 600 mA). These parts are suitable for applications where circuit current requirements do not exceed 100 mA. The BC856 series offers higher collector-emitter breakdown voltage (65 V versus 60 V), providing additional design margin. All BC856 variants are active in production and RoHS3 compliant.

BC856ALT1G and BC856BLT1G/BC856BLT3G from onsemi are available in SOT-23-3 packages matching the original MMBT2907A-7 footprint. These parts support the full operating temperature range (-55°C to 150°C) and provide 300 mW power dissipation. Transition frequency is 100 MHz, which is lower than the original 200 MHz specification.

BC856B-TP from Micro Commercial Co. provides 200 MHz transition frequency matching the original part, with 310 mW power dissipation capability. This variant is available in tape & reel packaging and is RoHS3 compliant.

Compliance and Qualification

All recommended substitute parts carry RoHS3 compliance status, addressing environmental regulatory requirements. The MMBT2907A-7-F and MMST2907A-7-F retain automotive AEC-Q101 qualification matching the original part. BC856 variants from Nexperia USA Inc. and onsemi also carry AEC-Q101 automotive qualification, supporting use in automotive applications.

Frequently Asked Questions (FAQ)

Q: Can the MMBT2907A-7-F be used as a direct replacement for the MMBT2907A-7?

A: Yes. The MMBT2907A-7-F maintains identical electrical specifications including 600 mA collector current, 60 V breakdown voltage, 200 MHz transition frequency, and 300 mW power dissipation. The part is active in production, RoHS3 compliant, and available in the same SOT-23-3 package. No circuit modifications are required.

Q: What is the difference between MMBT2907A-7-F and MMST2907A-7-F?

A: Both parts are manufactured by Diodes Incorporated and provide equivalent electrical performance. The primary difference is package size: MMBT2907A-7-F uses SOT-23-3 (same as original), while MMST2907A-7-F uses the smaller SOT-323 package. MMST2907A-7-F has reduced power dissipation (200 mW versus 300 mW). Select MMST2907A-7-F only if PCB space constraints require the smaller package and circuit power requirements do not exceed 200 mW.

Q: Can BC856 series transistors replace the MMBT2907A-7?

A: BC856 series transistors are functional equivalents with reduced collector current capability (100 mA maximum versus 600 mA). These parts are suitable only for applications where circuit current requirements do not exceed 100 mA. The higher breakdown voltage (65 V) and active product status make BC856 variants appropriate for new designs with lower current requirements. Existing designs requiring 600 mA operation must use MMBT2907A-7-F or MMST2907A-7-F.

Q: What is the difference between BC856A, BC856B, and BC856ALT1G variants?

A: All BC856 variants are PNP transistors with 100 mA collector current and 65 V breakdown voltage. The primary differences are DC current gain specifications and packaging. BC856A has minimum hFE of 125 at specified conditions. BC856B has minimum hFE of 220. BC856ALT1G and BC856BLT variants are onsemi sourced versions with similar specifications. Select based on required current gain and available packaging format (cut tape, tape & reel, or alternative supplier).

Q: Are all substitute parts automotive qualified?

A: MMBT2907A-7-F, MMST2907A-7-F, and BC856 variants from Nexperia USA Inc. carry AEC-Q101 automotive qualification. BC856 variants from onsemi also carry AEC-Q101 qualification. BC856B-TP from Micro Commercial Co. does not list automotive qualification in the provided specifications. Verify automotive qualification requirements for your specific application before selecting a substitute part.

Q: What packaging options are available for substitute parts?

A: MMBT2907A-7-F is available in cut tape and tape & reel formats in SOT-23-3 package. MMST2907A-7-F is available in tape & reel format in SOT-323 package. BC856 variants are available in cut tape, tape & reel, and alternative packaging formats. BC856,215 and BC856A,215 use TO-236AB package. BC856ALT1G, BC856BLT1G, and BC856BLT3G use SOT-23-3 package. BC856B-TP uses SOT-23 package. Select packaging based on PCB assembly process and component handling requirements.

Q: Is the transition frequency difference between 100 MHz and 200 MHz significant?

A: Transition frequency (fT) determines maximum switching speed capability. The original MMBT2907A-7 and MMBT2907A-7-F both specify 200 MHz. BC856 series variants specify 100 MHz, which is half the original frequency. For applications requiring high-speed switching above 100 MHz, use MMBT2907A-7-F or BC856B-TP (200 MHz). For lower-speed switching applications, BC856 variants with 100 MHz transition frequency are acceptable.

Q: What is the significance of RoHS3 compliance?

A: RoHS3 compliance indicates the part meets Restriction of Hazardous Substances Directive requirements, restricting use of lead and other hazardous materials. All recommended substitute parts are RoHS3 compliant, supporting compliance with environmental regulations in manufacturing and end-of-life disposal. The original MMBT2907A-7 is RoHS non-compliant, making the transition to RoHS3 compliant substitutes necessary for new production.

Q: Can I use BC856B-TP as a direct replacement?

A: BC856B-TP is a functional equivalent with reduced collector current (100 mA versus 600 mA). This part is suitable only for applications where circuit current does not exceed 100 mA. The 200 MHz transition frequency matches the original part. The 310 mW power dissipation exceeds the original 300 mW specification. Use BC856B-TP only in circuits designed for 100 mA maximum operation.

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