MMBT200A Equivalent & Substitute Parts

Part Overview

The MMBT200A is a surface-mount PNP bipolar junction transistor manufactured by onsemi, rated for 45 V collector-emitter breakdown voltage and 500 mA maximum collector current. The device is packaged in SOT-23-3 (TO-236-3) configuration and is currently classified as obsolete. Due to its obsolete status, equivalent and substitute parts from active manufacturers are necessary for new designs and ongoing production requirements. Substitute parts must maintain electrical compatibility within the specified parameter ranges while meeting current manufacturing and compliance standards.

Substiute Parts

MMBT200A
onsemiIn Stock: 27277MMBT200A Datasheet
MMBT200A
Current Part
BCX17LT1G
onsemiIn Stock: 293114BCX17LT1G Datasheet
BCX17LT1G
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NSVBCX17LT1G
onsemiIn Stock: 1429NSVBCX17LT1G Datasheet
NSVBCX17LT1G
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2SA1313-Y,LF
Toshiba Semiconductor and StorageIn Stock: 42762SA1313-Y,LF Datasheet
2SA1313-Y,LF
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BC807,215
Nexperia USA Inc.In Stock: 2907BC807,215 Datasheet
BC807,215
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BC807-16-7-F
Diodes IncorporatedIn Stock: 15720BC807-16-7-F Datasheet
BC807-16-7-F
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BC807-25-TP
Micro Commercial CoIn Stock: 28052BC807-25-TP Datasheet
BC807-25-TP
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BC807-40-7-F
Diodes IncorporatedIn Stock: 17132BC807-40-7-F Datasheet
BC807-40-7-F
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BC857B-7-F
Diodes IncorporatedIn Stock: 80349BC857B-7-F Datasheet
BC857B-7-F
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BC857BE6327HTSA1
Infineon TechnologiesIn Stock: 3446BC857BE6327HTSA1 Datasheet
BC857BE6327HTSA1
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BC857C-7-F
Diodes IncorporatedIn Stock: 155250BC857C-7-F Datasheet
BC857C-7-F
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BC857CE6327HTSA1
Infineon TechnologiesIn Stock: 6459BC857CE6327HTSA1 Datasheet
BC857CE6327HTSA1
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BCW68HTA
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BCX17T116
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BCX71JE6327HTSA1
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BCX71JE6327HTSA1
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BCX71KE6327HTSA1
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BCX71KE6327HTSA1
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FMMT720TA
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MMBT4403-7-F
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SMBT3906E6327HTSA1
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Key Parameters

Parameter MMBT200A Value Unit
Transistor Type PNP
Current - Collector (Ic) (Max) 500 mA
Voltage - Collector Emitter Breakdown (Max) 45 V
Vce Saturation (Max) @ Ib, Ic 400mV @ 20mA, 200mA V
Current - Collector Cutoff (Max) 50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 10mA, 1V
Power - Max 350 mW
Frequency - Transition 250 MHz
Operating Temperature -55 to 150 °C
Package / Case SOT-23-3
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the MMBT200A is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

  • Transistor Type: PNP (mandatory)
  • Collector-Emitter Breakdown Voltage: 45 V minimum
  • Maximum Collector Current: 500 mA minimum
  • Package Type: SOT-23-3 / TO-236-3 (mandatory for mechanical compatibility)
  • Mounting Type: Surface Mount (mandatory)
  • Moisture Sensitivity Level: 1 (Unlimited) or equivalent

Secondary Compatibility Parameters:

  • Vce Saturation characteristics
  • DC Current Gain (hFE)
  • Power dissipation rating
  • Operating temperature range
  • Transition frequency

Substitute parts are grouped into two categories:

Category 1: Direct Electrical Equivalents (500 mA Collector Current) Parts maintaining the full 500 mA collector current specification with 45 V or higher breakdown voltage rating. These parts provide direct functional replacement with identical current handling capability.

Category 2: Reduced Current Equivalents (100 mA Collector Current) Parts with reduced maximum collector current (100 mA) but maintaining 45 V breakdown voltage and SOT-23-3 packaging. These parts are suitable for applications where the full 500 mA current is not required and provide enhanced performance in lower-current operating conditions.

Parameter Comparison

Part Number Manufacturer Ic (Max) mA Vce(br) V Vce Sat @ Ib,Ic hFE (Min) @ Ic,Vce Power mW fT MHz Temp °C Status
MMBT200A onsemi 500 45 400mV @ 20mA, 200mA 300 @ 10mA, 1V 350 250 -55 to 150 Obsolete
BCX17LT1G onsemi 500 45 620mV @ 50mA, 500mA 100 @ 100mA, 1V 300 -55 to 150 Active
NSVBCX17LT1G onsemi 500 45 620mV @ 50mA, 500mA 100 @ 100mA, 1V 225 -55 to 150 Active
2SA1313-Y,LF Toshiba 500 50 250mV @ 10mA, 100mA 120 @ 100mA, 1V 200 200 -55 to 150 Active
BC807,215 Nexperia 500 45 700mV @ 50mA, 500mA 100 @ 100mA, 1V 250 80 -55 to 150 Active
BC807-16-7-F Diodes Inc. 500 45 700mV @ 50mA, 500mA 100 @ 100mA, 1V 310 100 -55 to 150 Active
BC807-25-TP Micro Commercial Co 500 45 700mV @ 50mA, 500mA 160 @ 100mA, 1V 300 100 -55 to 150 Active
BC807-40-7-F Diodes Inc. 500 45 700mV @ 50mA, 500mA 250 @ 100mA, 1V 310 100 -55 to 150 Active
BC857B-7-F Diodes Inc. 100 45 650mV @ 5mA, 100mA 220 @ 2mA, 5V 300 200 -65 to 150 Active
BC857BE6327HTSA1 Infineon 100 45 650mV @ 5mA, 100mA 220 @ 2mA, 5V 330 250 -55 to 150 Last Time Buy
BC857C-7-F Diodes Inc. 100 45 650mV @ 5mA, 100mA 420 @ 2mA, 5V 300 200 -65 to 150 Active

Engineering Selection Recommendations

For Direct Replacement (500 mA Applications):

The BCX17LT1G from onsemi is the primary direct substitute for the MMBT200A. Both devices are manufactured by onsemi, share identical collector current and breakdown voltage specifications, and are packaged in SOT-23-3. The BCX17LT1G is in active production status with ROHS3 compliance and unlimited moisture sensitivity rating. This part is recommended for applications requiring the full 500 mA collector current specification.

The NSVBCX17LT1G variant of the BCX17 series includes AEC-Q101 automotive qualification and is suitable for automotive-grade applications. This part maintains the same electrical specifications as BCX17LT1G with automotive-grade certification.

The 2SA1313-Y,LF from Toshiba Semiconductor provides an alternative 500 mA substitute with 50 V breakdown voltage (exceeding the 45 V requirement) and active production status. This part offers superior saturation voltage characteristics at lower current levels.

The BC807 series from Nexperia and Diodes Incorporated (BC807,215, BC807-16-7-F, BC807-25-TP, BC807-40-7-F) provides multiple 500 mA alternatives in active production. These parts maintain 45 V breakdown voltage and SOT-23-3 packaging with ROHS3 compliance. Variants differ in DC current gain specifications and transition frequency characteristics.

For Reduced Current Applications (100 mA Maximum):

The BC857 series (BC857B-7-F, BC857C-7-F) from Diodes Incorporated and BC857BE6327HTSA1 from Infineon are suitable for applications where collector current does not exceed 100 mA. These parts maintain 45 V breakdown voltage and SOT-23-3 packaging with active or last-time-buy production status. The BC857C-7-F offers the highest DC current gain (420 @ 2mA, 5V) among the BC857 variants.

Compliance and Production Status:

All recommended active substitutes maintain ROHS3 compliance and unlimited moisture sensitivity rating (MSL 1). Parts in active production status are preferred for new designs. The BC857BE6327HTSA1 is designated as Last Time Buy and should be evaluated for long-term availability before selection for new production designs.

Frequently Asked Questions (FAQ)

Q: Can the MMBT200A be directly replaced with a BC857 series transistor?

A: BC857 series transistors are not direct replacements for the MMBT200A. The BC857 series is rated for maximum 100 mA collector current, while the MMBT200A is rated for 500 mA. BC857 parts are suitable only for applications where the collector current does not exceed 100 mA. For applications requiring the full 500 mA specification, use BCX17LT1G, 2SA1313-Y,LF, or BC807 series alternatives.

Q: What is the difference between BCX17LT1G and NSVBCX17LT1G?

A: Both parts share identical electrical specifications (500 mA, 45 V, SOT-23-3). The NSVBCX17LT1G includes AEC-Q101 automotive qualification and automotive-grade designation. Select NSVBCX17LT1G for automotive applications requiring AEC-Q101 compliance; select BCX17LT1G for general industrial applications.

Q: Are all substitute parts available in the same package as the MMBT200A?

A: Yes. All listed substitute parts are packaged in SOT-23-3 (TO-236-3) surface-mount configuration, matching the MMBT200A package specification. Mechanical compatibility with existing PCB layouts is maintained.

Q: Which substitute part offers the best saturation voltage performance?

A: The 2SA1313-Y,LF from Toshiba provides the lowest saturation voltage at 250 mV (@ 10 mA, 100 mA), compared to 400 mV for the MMBT200A and 620-700 mV for other substitutes. This characteristic is beneficial for low-voltage switching applications.

Q: Can I use a BC807-40-7-F in place of a BC807-16-7-F?

A: Both parts are electrically compatible with identical collector current (500 mA), breakdown voltage (45 V), and package (SOT-23-3). The primary difference is DC current gain: BC807-40-7-F specifies 250 @ 100 mA, 1V, while BC807-16-7-F specifies 100 @ 100 mA, 1V. Selection depends on the required current gain for your circuit design.

Q: What is the production status of the MMBT200A, and why is substitution necessary?

A: The MMBT200A is classified as obsolete and no longer in active production. Substitution is necessary for new designs, production continuity, and long-term component availability. Active production alternatives such as BCX17LT1G, BC807 series, and 2SA1313-Y,LF ensure design continuity and supply chain reliability.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All listed substitute parts maintain ROHS3 compliance status. The MMBT200A is classified as REACH Unaffected, and all active substitutes maintain equivalent REACH and ROHS compliance designations.

Q: What is the operating temperature range difference between MMBT200A and BC857 series?

A: The MMBT200A operates from -55°C to 150°C. BC857B-7-F and BC857C-7-F extend the lower temperature limit to -65°C, providing wider temperature range coverage. This extended range is beneficial for applications requiring operation at lower ambient temperatures.

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