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MMBT1815-L-TP Equivalent & Substitute Parts
Part Overview
The MMBT1815-L-TP is an NPN bipolar junction transistor manufactured by Micro Commercial Co, designed for interface applications in surface mount configurations. This active product operates across a temperature range of -55°C to 125°C and is housed in a SOT-23 package. The transistor is specified for 50 V collector-emitter breakdown voltage, 150 mA maximum collector current, and 200 mW power dissipation with an 80 MHz transition frequency.
Substitute parts are identified when equivalent electrical performance and mechanical compatibility are required due to component availability, supply chain considerations, or design flexibility within specified parameter tolerances.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | NPN | — |
| Voltage - Collector Emitter Breakdown (Max) | 50 | V |
| Current - Collector (Ic) (Max) | 150 | mA |
| Power - Max | 200 | mW |
| Frequency - Transition | 80 | MHz |
| Operating Temperature Range | -55 to 125 | °C |
| Mounting Type | Surface Mount | — |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | — |
Substitute Part Grouping Explanation
Substitution eligibility is determined by strict adherence to the following electrical and mechanical parameters:
Primary Substitution Criteria:
- Transistor Type: NPN (required match)
- Voltage - Collector Emitter Breakdown (Max): 50 V (required match)
- Current - Collector (Ic) (Max): 150 mA (required match)
- Power - Max: 200 mW minimum (equal or greater acceptable)
- Mounting Type: Surface Mount (required match)
- Package / Case: TO-236-3, SC-59, SOT-23-3 (required match)
Secondary Parameters (allowable variation):
- Frequency - Transition: 80 MHz or greater
- Operating Temperature: Maximum rating of 150°C or greater
- Vce Saturation and DC Current Gain: Variation acceptable within application tolerance
All substitute parts listed meet the primary substitution criteria. Variations in transition frequency, saturation voltage, and current gain do not preclude substitution when primary electrical and mechanical specifications are satisfied.
Parameter Comparison
| Parameter | MMBT1815-L-TP | 2SC2412KT146Q | 2SD2226KT146W | NXP3875GR | TMBT3904,LM |
|---|---|---|---|---|---|
| Manufacturer | Micro Commercial Co | Rohm Semiconductor | Rohm Semiconductor | Nexperia USA Inc. | Toshiba Semiconductor and Storage |
| Transistor Type | NPN | NPN | NPN | NPN | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 50 V | 50 V | 50 V | 50 V | 50 V |
| Current - Collector (Ic) (Max) | 150 mA | 150 mA | 150 mA | 150 mA | 150 mA |
| Power - Max | 200 mW | 200 mW | 200 mW | 200 mW | 320 mW |
| Frequency - Transition | 80 MHz | 180 MHz | 250 MHz | 80 MHz | 300 MHz |
| Operating Temperature (Max) | 125°C | 150°C | 150°C | 150°C | 150°C |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA | 400mV @ 5mA, 50mA | 300mV @ 5mA, 50mA | 250mV @ 10mA, 100mA | 300mV @ 5mA, 50mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 130 @ 2mA, 6V | 120 @ 1mA, 6V | 1200 @ 1mA, 5V | 200 @ 2mA, 6V | 100 @ 10mA, 1V |
| Current - Collector Cutoff (Max) | 100nA (ICBO) | 100nA (ICBO) | 300nA (ICBO) | 100nA (ICBO) | 100nA (ICBO) |
| Product Status | Active | Active | Active | Active | Active |
| RoHS Status | REACH Unaffected | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
Engineering Selection Recommendations
All four substitute parts satisfy the core electrical and mechanical requirements for direct substitution with the MMBT1815-L-TP. Selection among these alternatives is based on the following considerations:
2SC2412KT146Q (Rohm Semiconductor): This part matches all primary specifications and provides enhanced transition frequency (180 MHz) with ROHS3 compliance and unlimited moisture sensitivity rating. Suitable for applications requiring improved high-frequency performance within the same power envelope.
2SD2226KT146W (Rohm Semiconductor): This part exceeds primary specifications with 250 MHz transition frequency and higher DC current gain (1200 @ 1mA, 5V). ROHS3 compliant with unlimited moisture sensitivity. Appropriate for applications demanding superior frequency response and gain characteristics.
NXP3875GR (Nexperia USA Inc.): This part maintains identical electrical specifications to the MMBT1815-L-TP (80 MHz transition frequency, 250mV saturation voltage) and includes automotive-grade qualification (AEC-Q101). ROHS3 compliant with unlimited moisture sensitivity. Designated for automotive and mission-critical applications requiring AEC-Q101 certification.
TMBT3904,LM (Toshiba Semiconductor and Storage): This part meets all primary specifications with enhanced power rating (320 mW) and superior transition frequency (300 MHz). ROHS3 compliant with unlimited moisture sensitivity. Suitable for applications requiring maximum frequency performance and thermal headroom.
Frequently Asked Questions (FAQ)
Q: Can the 2SC2412KT146Q replace the MMBT1815-L-TP in all applications?
A: Yes. The 2SC2412KT146Q meets all primary substitution criteria: NPN type, 50 V breakdown voltage, 150 mA collector current, 200 mW power rating, and identical SOT-23 package. The higher transition frequency (180 MHz versus 80 MHz) does not preclude substitution and may provide performance benefits in high-frequency circuits.
Q: What is the difference between the 2SD2226KT146W and the MMBT1815-L-TP?
A: Both parts share identical primary specifications (NPN, 50 V, 150 mA, 200 mW, SOT-23). The 2SD2226KT146W provides higher transition frequency (250 MHz), significantly higher DC current gain (1200 @ 1mA, 5V versus 130 @ 2mA, 6V), and lower saturation voltage (300mV versus 250mV at different test conditions). These differences do not prevent substitution and may enhance performance in gain-sensitive applications.
Q: Is the NXP3875GR suitable for automotive applications?
A: Yes. The NXP3875GR carries AEC-Q101 automotive qualification and is designated as automotive-grade. It maintains electrical equivalence to the MMBT1815-L-TP while meeting automotive reliability and qualification standards.
Q: Why does the TMBT3904,LM have a higher power rating (320 mW) than the MMBT1815-L-TP (200 mW)?
A: The TMBT3904,LM is specified with a 320 mW maximum power dissipation, which exceeds the 200 mW specification of the MMBT1815-L-TP. This higher rating does not prevent substitution; it indicates greater thermal capability and may provide additional design margin in power-limited applications.
Q: Are all substitute parts available in the same packaging?
A: Yes. All substitute parts are specified in TO-236-3, SC-59, SOT-23-3 packages, ensuring mechanical and footprint compatibility with the MMBT1815-L-TP.
Q: What is the significance of the transition frequency differences among these parts?
A: Transition frequency (fT) indicates the frequency at which transistor gain begins to roll off. The MMBT1815-L-TP is specified at 80 MHz. Substitute parts with higher transition frequencies (180 MHz, 250 MHz, 300 MHz) maintain gain at higher frequencies and are suitable for applications operating at or above the original specification. Lower transition frequency is not acceptable; higher transition frequency does not preclude substitution.
Q: Do all substitute parts comply with RoHS and REACH regulations?
A: The MMBT1815-L-TP is REACH Unaffected. All substitute parts are ROHS3 Compliant and REACH Unaffected, ensuring regulatory compatibility for applications requiring environmental compliance.
Q: Can the TMBT3904,LM be used in place of the MMBT1815-L-TP despite the higher power rating?
A: Yes. The higher power rating (320 mW versus 200 mW) indicates greater thermal capability and does not prevent substitution. The part meets all primary electrical and mechanical specifications and is suitable for direct replacement.
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