MMBFJ177 Equivalent & Substitute Parts

Part Overview

The MMBFJ177 is a P-Channel JFET transistor manufactured by onsemi, designed for surface mount applications in the SOT-23-3 package. This component operates at a maximum voltage of 30V with a power dissipation rating of 225 mW and supports operating temperatures from -55°C to 150°C. The MMBFJ177 is classified as obsolete, making identification of suitable substitute parts essential for ongoing design support and production continuity. Active equivalent models are available from the same manufacturer with identical or improved electrical characteristics.

Substiute Parts

MMBFJ177
onsemiIn Stock: 9641MMBFJ177 Datasheet
MMBFJ177
Current Part
MMBFJ175LT3G
onsemiIn Stock: 10110MMBFJ175LT3G Datasheet
MMBFJ175LT3G
Similar
MMBFJ177LT1G
onsemiIn Stock: 212493MMBFJ177LT1G Datasheet
MMBFJ177LT1G
Similar

Key Parameters

Parameter Value Unit
FET Type P-Channel
Voltage - Breakdown (V(BR)GSS) 30 V
Current - Drain (Idss) @ Vds (Vgs=0) 1.5 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id 800 mV @ 10 nA
Resistance - RDS(On) 300 Ohms
Power - Max 225 mW
Operating Temperature -55 to 150 °C (TJ)
Package / Case SOT-23-3 (TO-236)
Mounting Type Surface Mount
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitute parts for the MMBFJ177 are identified based on strict electrical and mechanical compatibility criteria. All substitute candidates must meet the following requirements:

  • Identical FET type: P-Channel
  • Identical voltage rating: 30V breakdown voltage (V(BR)GSS)
  • Identical power dissipation: 225 mW maximum
  • Identical package: SOT-23-3 (TO-236) surface mount
  • Identical operating temperature range: -55°C to 150°C
  • Compliance with RoHS3 and MSL Level 1 specifications

The MMBFJ177 exhibits specific drain current (Idss) and cutoff voltage (VGS off) characteristics. Substitute parts may vary in these parameters within the allowed range for the product category, provided all other electrical and mechanical specifications remain constant. The primary distinction between the MMBFJ177 and available substitutes is product status: the MMBFJ177 is obsolete, while active alternatives are available.

Parameter Comparison

Parameter MMBFJ177 MMBFJ177LT1G MMBFJ175LT3G
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Active Active
FET Type P-Channel P-Channel P-Channel
Voltage - Breakdown (V(BR)GSS) 30 V 30 V 30 V
Current - Drain (Idss) @ Vds (Vgs=0) 1.5 mA @ 15 V 1.5 mA @ 15 V 7 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id 800 mV @ 10 nA 800 mV @ 10 nA 3 V @ 10 nA
Input Capacitance (Ciss) (Max) @ Vds 11 pF @ 10V (VGS) 11 pF @ 10V (VGS)
Resistance - RDS(On) 300 Ohms 300 Ohms 125 Ohms
Power - Max 225 mW 225 mW 225 mW
Operating Temperature -55 to 150°C (TJ) -55 to 150°C (TJ) -55 to 150°C (TJ)
Package / Case SOT-23-3 SOT-23-3 SOT-23-3
Mounting Type Surface Mount Surface Mount Surface Mount
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

The MMBFJ177 is classified as obsolete and should be replaced with an active equivalent for new designs and production continuity. Two substitute parts are available from onsemi:

MMBFJ177LT1G is an exact electrical match to the MMBFJ177, maintaining identical Idss (1.5 mA @ 15 V), VGS off (800 mV @ 10 nA), and RDS(On) (300 Ohms) specifications. This part is currently active and available in higher inventory quantities (212,400 Pcs). The MMBFJ177LT1G is supplied in Cut Tape (CT) & Digi-Reel® packaging and is fully compliant with RoHS3 and MSL Level 1 requirements.

MMBFJ175LT3G is an alternative substitute with modified electrical characteristics. This part exhibits higher drain current (7 mA @ 15 V), higher cutoff voltage (3 V @ 10 nA), and lower on-resistance (125 Ohms) compared to the MMBFJ177. The MMBFJ175LT3G is supplied in Tape & Reel (TR) packaging and is also fully compliant with RoHS3 and MSL Level 1 requirements. This part is suitable for applications where the modified electrical parameters are compatible with circuit design requirements.

All substitute parts maintain identical voltage ratings, power dissipation, operating temperature range, and package specifications. Selection between MMBFJ177LT1G and MMBFJ175LT3G depends on circuit-specific requirements for drain current, cutoff voltage, and on-resistance characteristics.

Frequently Asked Questions (FAQ)

Q: Can the MMBFJ177 be directly replaced with MMBFJ177LT1G?

A: Yes. The MMBFJ177LT1G is an exact electrical equivalent with identical Idss, VGS off, and RDS(On) specifications. Both parts share the same SOT-23-3 package and operating parameters. The primary difference is product status: MMBFJ177LT1G is active while MMBFJ177 is obsolete.

Q: What are the differences between MMBFJ177LT1G and MMBFJ175LT3G?

A: Both parts are P-Channel JFETs with identical 30V breakdown voltage, 225 mW power rating, and SOT-23-3 packaging. The MMBFJ175LT3G differs in three electrical parameters: drain current (7 mA vs. 1.5 mA), cutoff voltage (3 V vs. 800 mV), and on-resistance (125 Ohms vs. 300 Ohms). Selection depends on circuit requirements for these specific characteristics.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. The MMBFJ177, MMBFJ177LT1G, and MMBFJ175LT3G are all ROHS3 Compliant with MSL Level 1 (Unlimited) moisture sensitivity rating.

Q: What packaging options are available for substitutes?

A: MMBFJ177LT1G is supplied in Cut Tape (CT) & Digi-Reel® packaging. MMBFJ175LT3G is supplied in Tape & Reel (TR) packaging. Both maintain the SOT-23-3 (TO-236) physical package specification for surface mount assembly.

Q: Can MMBFJ175LT3G be used in all applications designed for MMBFJ177?

A: MMBFJ175LT3G is electrically different from MMBFJ177 in drain current, cutoff voltage, and on-resistance. Compatibility depends on circuit design tolerance for these parameters. Applications requiring the specific electrical characteristics of MMBFJ177 should use MMBFJ177LT1G instead.

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