MMBD770T1 Equivalent & Substitute Parts

Part Overview

The MMBD770T1 is an RF Schottky diode manufactured by onsemi, rated for 70V peak reverse voltage with 200 mA maximum current and 120 mW power dissipation in SC-70 (SOT-323) surface mount packaging. This part is classified as obsolete, making equivalent and substitute parts necessary for new designs and ongoing production requirements. The diode operates across a temperature range of -55°C to 125°C and features 1 pF capacitance at 20V, 1MHz.

Key Parameters

Parameter	Value
Diode Type	Schottky - Single
Voltage - Peak Reverse (Max)	70V
Current - Max	200 mA
Power Dissipation (Max)	120 mW
Capacitance @ Vr, F	1pF @ 20V, 1MHz
Operating Temperature	-55°C ~ 125°C (TJ)
Package / Case	SC-70, SOT-323
RoHS Status	RoHS non-compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)

Substitute Part Grouping Explanation

Substitution for the MMBD770T1 is determined by the following critical parameters: Schottky diode technology, 70V peak reverse voltage rating, SC-70 (SOT-323) package compatibility, and operating temperature range. Parts are grouped into two categories:

Direct Manufacturer Equivalent (MMBD770T1G): Identical electrical specifications and packaging from the same manufacturer (onsemi), differing only in product status (active vs. obsolete) and packaging format (tape & reel vs. bulk).

Parametric Equivalents (SMMBD770T1G): Maintains all critical electrical parameters (70V, 200 mA, 120 mW, SC-70 package) with identical performance characteristics.

Similar Parts (BAS70W,115 and BAS70W-7-F): Share the same voltage rating (70V), package (SC-70, SOT-323), and Schottky technology, but with reduced maximum current rating (70 mA vs. 200 mA) and power dissipation. These are suitable only for applications with lower current requirements.

Parameter Comparison

Parameter	MMBD770T1	MMBD770T1G	SMMBD770T1G	BAS70W,115	BAS70W-7-F
Manufacturer	onsemi	onsemi	onsemi	Nexperia USA Inc.	Diodes Incorporated
Diode Type	Schottky - Single	Schottky - Single	Schottky - Single	Schottky	Schottky
Voltage - Peak Reverse (Max)	70V	70V	70V	70V	70V
Current - Max	200 mA	200 mA	200 mA	70 mA	70 mA
Power Dissipation (Max)	120 mW	120 mW	120 mW	Not specified	Not specified
Capacitance @ Vr, F	1pF @ 20V, 1MHz	1pF @ 20V, 1MHz	1pF @ 20V, 1MHz	2pF @ 0V, 1MHz	2pF @ 0V, 1MHz
Operating Temperature	-55°C ~ 125°C	-55°C ~ 125°C	-55°C ~ 125°C	-55°C ~ 125°C (BAS70W-7-F only)	-55°C ~ 125°C
Package / Case	SC-70, SOT-323	SC-70, SOT-323	SC-70, SOT-323	SC-70, SOT-323	SC-70, SOT-323
Product Status	Obsolete	Active	Active	Active	Active
RoHS Status	RoHS non-compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

For Direct Replacement: MMBD770T1G is the primary choice, offering identical electrical specifications and active product status from onsemi. This part is ROHS3 compliant and maintains full compatibility with existing designs.

For Parametric Equivalence: SMMBD770T1G provides equivalent performance with active status and ROHS3 compliance. Selection between MMBD770T1G and SMMBD770T1G depends on packaging requirements (tape & reel availability and inventory levels).

For Current-Limited Applications: BAS70W,115 and BAS70W-7-F are suitable only when circuit requirements do not exceed 70 mA maximum current. Both parts are ROHS3 compliant and active. BAS70W-7-F offers specified reverse recovery time (5 ns) and lower reverse leakage current (100 nA @ 50V), making it preferable for high-frequency switching applications within the 70 mA current limit.

Compliance Consideration: All substitute parts are ROHS3 compliant, whereas the original MMBD770T1 is non-compliant. This is a significant advantage for new designs subject to environmental regulations.

Frequently Asked Questions (FAQ)

Q: Can MMBD770T1G be used as a direct replacement for MMBD770T1?

A: Yes. MMBD770T1G is electrically and mechanically identical to MMBD770T1, with the primary differences being active product status and ROHS3 compliance. Both parts share identical voltage, current, power dissipation, capacitance, temperature range, and SC-70 packaging.

Q: What is the difference between MMBD770T1G and SMMBD770T1G?

A: Both parts are parametric equivalents with identical electrical specifications. The difference lies in the base product number designation (MMBD770 vs. SMMBD770) and manufacturer part number structure. Selection should be based on availability and packaging format requirements.

Q: Can BAS70W,115 or BAS70W-7-F replace MMBD770T1 in all applications?

A: No. These parts have a maximum current rating of 70 mA compared to 200 mA for MMBD770T1. They are suitable only for applications where circuit current does not exceed 70 mA. Voltage rating, package, and temperature range are compatible.

Q: What are the key differences between BAS70W,115 and BAS70W-7-F?

A: Both parts share the same voltage, current, and package specifications. BAS70W-7-F specifies reverse recovery time (5 ns) and lower reverse leakage current (100 nA @ 50V), making it preferable for high-frequency applications. BAS70W,115 does not provide these specifications.

Q: Are all substitute parts RoHS compliant?

A: Yes. MMBD770T1G, SMMBD770T1G, BAS70W,115, and BAS70W-7-F are all ROHS3 compliant. The original MMBD770T1 is RoHS non-compliant.

Q: Does package compatibility apply to all substitute parts?

A: Yes. All substitute parts use SC-70 (SOT-323) surface mount packaging, ensuring mechanical and electrical compatibility with existing PCB layouts designed for MMBD770T1.

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