MMBD4448V-TP Equivalent & Substitute Parts

Part Overview

The MMBD4448V-TP is a dual independent general-purpose diode array manufactured by Micro Commercial Co, designed for surface mount applications in SOT-563 and SOT-666 packages. This component features fast recovery characteristics with a maximum reverse voltage of 80 V and average rectified current of 250 mA per diode. The part is currently in active production status with RoHS3 compliance and unlimited moisture sensitivity level (MSL 1).

Substitute parts are identified to provide design flexibility, supply chain alternatives, and inventory availability options while maintaining electrical and mechanical compatibility with the original specification.

Substiute Parts

MMBD4448V-TP
Micro Commercial CoIn Stock: 1234MMBD4448V-TP Datasheet
MMBD4448V-TP
Current Part
MMBD4448V-7
Diodes IncorporatedIn Stock: 102382MMBD4448V-7 Datasheet
MMBD4448V-7
Direct

Key Parameters

Parameter Value Unit
Diode Configuration 2 Independent
Voltage - DC Reverse (Vr) (Max) 80 V
Current - Average Rectified (Io) (per Diode) 250 mA
Voltage - Forward (Vf) (Max) @ If 1.25 @ 150 mA V
Speed Classification Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 4 ns
Current - Reverse Leakage @ Vr 100 nA @ 70 V
Operating Temperature - Junction (Max) 150 °C
Package / Case SOT-563, SOT-666
Mounting Type Surface Mount
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitute parts for the MMBD4448V-TP are qualified based on electrical and mechanical parameter equivalence. The following criteria determine substitution eligibility:

Electrical Parameters (Must Match):

  • Diode configuration: 2 Independent
  • Maximum reverse voltage (Vr): 80 V
  • Average rectified current (Io) per diode: 250 mA
  • Maximum forward voltage (Vf): 1.25 V @ 150 mA
  • Speed classification: Fast Recovery ≤ 500ns, > 200mA (Io)
  • Reverse recovery time (trr): 4 ns
  • Reverse leakage current: 100 nA @ 70 V

Mechanical Parameters (Must Match):

  • Package / Case: SOT-563, SOT-666
  • Mounting type: Surface Mount
  • Supplier device package: SOT-563

Compliance Parameters (Must Match):

  • RoHS Status: ROHS3 Compliant
  • Moisture Sensitivity Level: 1 (Unlimited)

The MMBD4448V-7 manufactured by Diodes Incorporated meets all electrical, mechanical, and compliance requirements for direct substitution with the MMBD4448V-TP.

Parameter Comparison

Parameter MMBD4448V-TP (Micro Commercial Co) MMBD4448V-7 (Diodes Incorporated) Match
Diode Configuration 2 Independent 2 Independent
Voltage - DC Reverse (Vr) (Max) 80 V 80 V
Current - Average Rectified (Io) (per Diode) 250 mA 250 mA
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA 1.25 V @ 150 mA
Speed Classification Fast Recovery ≤ 500ns, > 200mA (Io) Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 4 ns 4 ns
Current - Reverse Leakage @ Vr 100 nA @ 70 V 100 nA @ 70 V
Operating Temperature - Junction (Max) 150°C 150°C
Package / Case SOT-563, SOT-666 SOT-563, SOT-666
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-563 SOT-563
RoHS Status ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
REACH Status REACH Unaffected REACH Unaffected
ECCN EAR99 EAR99
HTSUS 8541.10.0070 8541.10.0070

Engineering Selection Recommendations

Both the MMBD4448V-TP and MMBD4448V-7 are active production components with identical electrical specifications and mechanical packaging. Selection between these parts is based on the following factors:

Product Status: Both parts maintain active production status, ensuring long-term availability and supply chain stability.

Compliance Certifications: Both components are ROHS3 compliant and REACH unaffected, meeting current regulatory requirements for electronic component manufacturing and distribution.

Inventory Availability: The MMBD4448V-7 (Diodes Incorporated) currently maintains higher inventory levels (102,300 pcs) compared to the MMBD4448V-TP (1,143 pcs), providing supply chain flexibility for high-volume applications.

Manufacturer Qualification: Selection may be determined by existing supplier relationships, procurement agreements, or manufacturer-specific quality certifications within the design organization.

Frequently Asked Questions (FAQ)

Q: Can the MMBD4448V-7 be used as a direct replacement for the MMBD4448V-TP in existing designs?

A: Yes. The MMBD4448V-7 is electrically and mechanically equivalent to the MMBD4448V-TP. All critical parameters including reverse voltage (80 V), rectified current (250 mA), forward voltage (1.25 V @ 150 mA), and recovery time (4 ns) are identical. Both components use the same SOT-563 package and mounting configuration.

Q: Are there any temperature operating range differences between these parts?

A: The MMBD4448V-TP specifies a maximum junction temperature of 150°C. The MMBD4448V-7 specifies an operating temperature range of −65°C to 150°C. Both parts support the same maximum junction temperature limit of 150°C, which is the critical parameter for thermal design.

Q: Do both parts meet the same regulatory and compliance standards?

A: Yes. Both the MMBD4448V-TP and MMBD4448V-7 are ROHS3 compliant, REACH unaffected, and classified under ECCN EAR99 with HTSUS code 8541.10.0070. Both components have MSL 1 (unlimited moisture sensitivity level).

Q: What is the significance of the SOT-563 and SOT-666 package designation?

A: Both parts are available in SOT-563 and SOT-666 packages, which are equivalent surface mount package outlines for dual diode arrays. The supplier device package for both components is SOT-563, ensuring consistent PCB footprint and assembly compatibility.

Q: Can these parts be used interchangeably in high-frequency switching applications?

A: Yes. Both components feature fast recovery characteristics with a reverse recovery time of 4 ns and are classified as fast recovery diodes with switching speeds ≤ 500 ns at currents greater than 200 mA. This specification supports high-frequency switching applications within the rated current and voltage parameters.

Q: What is the reverse leakage current specification for these diodes?

A: Both parts specify a maximum reverse leakage current of 100 nA at 70 V reverse bias. This parameter is critical for low-power standby applications and high-impedance circuit designs.

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