MMBD2004SQ-7-F Equivalent & Substitute Parts

Part Overview

The MMBD2004SQ-7-F is a general-purpose diode array manufactured by Diodes Incorporated, configured as 1 pair series connection with a maximum reverse voltage rating of 240 V and average rectified current of 225 mA per diode. The device is housed in a surface mount SOT-23-3 package and features fast recovery characteristics with a reverse recovery time of 50 ns. This component is classified as Active product status with AEC-Q101 automotive qualification and ROHS3 compliance.

Equivalent and substitute parts are identified to address inventory availability, supply chain continuity, and design flexibility while maintaining electrical and mechanical compatibility within the specified parameter ranges.

Substiute Parts

MMBD2004SQ-7-F
Diodes IncorporatedIn Stock: 1113MMBD2004SQ-7-F Datasheet
MMBD2004SQ-7-F
Current Part
MMBD2004S-7-F
Diodes IncorporatedIn Stock: 24128MMBD2004S-7-F Datasheet
MMBD2004S-7-F
Parametric Equivalent
NSVBAS21SLT1G
onsemiIn Stock: 35112NSVBAS21SLT1G Datasheet
NSVBAS21SLT1G
Similar
GSD2004S-E3-08
Vishay General Semiconductor - Diodes DivisionIn Stock: 2801GSD2004S-E3-08 Datasheet
GSD2004S-E3-08
Parametric Equivalent

Key Parameters

Parameter Value Unit
Diode Configuration 1 Pair Series Connection
Voltage - DC Reverse (Vr) (Max) 240 V
Current - Average Rectified (Io) per Diode 225 mA (DC)
Voltage - Forward (Vf) (Max) @ If 1 V @ 100 mA
Speed Classification Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns
Current - Reverse Leakage @ Vr 100 nA @ 240 V
Operating Temperature - Junction -65 to 150 °C
Package / Case TO-236-3, SC-59, SOT-23-3
Mounting Type Surface Mount
Technology Standard

Substitute Part Grouping Explanation

Substitute parts for the MMBD2004SQ-7-F are classified into two categories based on electrical parameter alignment:

Parametric Equivalents maintain identical or equivalent electrical specifications across all critical parameters: reverse voltage (240 V), average rectified current (225 mA per diode), forward voltage drop (1 V @ 100 mA), reverse recovery time (50 ns), reverse leakage current (100 nA @ 240 V), and package configuration (SOT-23-3). These parts are direct functional replacements.

Similar Parts share the same package footprint and primary electrical characteristics but exhibit variations in one or more secondary parameters. These variations remain within acceptable operating ranges for most applications but require design verification for specific use cases.

The following parameters determine substitution eligibility:

  • Diode configuration (1 Pair Series Connection)
  • Reverse voltage rating (minimum 240 V)
  • Average rectified current (225 mA per diode)
  • Package type (SOT-23-3)
  • Mounting method (Surface Mount)
  • Reverse recovery time (50 ns)

Parameter Comparison

Parameter MMBD2004SQ-7-F (Main) MMBD2004S-7-F NSVBAS21SLT1G GSD2004S-E3-08
Manufacturer Diodes Incorporated Diodes Incorporated onsemi Vishay General Semiconductor
Voltage - DC Reverse (Vr) (Max) 240 V 240 V 250 V 240 V
Current - Average Rectified (Io) 225 mA (DC) 225 mA (DC) 225 mA 225 mA (DC)
Voltage - Forward (Vf) (Max) @ If 1 V @ 100 mA 1 V @ 100 mA 1.25 V @ 200 mA 1 V @ 100 mA
Speed Fast Recovery ≤ 500ns, > 200mA (Io) Fast Recovery ≤ 500ns, > 200mA (Io) Fast Recovery ≤ 500ns, > 200mA (Io) Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 50 ns 50 ns 50 ns
Current - Reverse Leakage @ Vr 100 nA @ 240 V 100 nA @ 240 V 100 µA @ 200 V 100 nA @ 240 V
Operating Temperature - Junction -65°C to 150°C -65°C to 150°C -55°C to 150°C Max 150°C
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Product Status Active Active Active Active

Engineering Selection Recommendations

MMBD2004S-7-F (Diodes Incorporated) is a parametric equivalent offering identical electrical specifications to the MMBD2004SQ-7-F. Both parts are manufactured by Diodes Incorporated, share the same base product number (MMBD2004), and maintain equivalent performance across all critical parameters. This part is suitable for direct substitution in all applications. Higher inventory availability (24,080 pcs) supports supply chain continuity.

GSD2004S-E3-08 (Vishay General Semiconductor - Diodes Division) is a parametric equivalent with matching electrical characteristics across reverse voltage, rectified current, forward voltage drop, reverse recovery time, and reverse leakage current. The part maintains identical package configuration and surface mount characteristics. This part is suitable for direct substitution in all applications. Inventory availability is 2,780 pcs.

NSVBAS21SLT1G (onsemi) is classified as a similar part with the same package footprint and primary electrical ratings. This part exhibits a higher reverse voltage rating (250 V versus 240 V), which provides additional design margin. However, the forward voltage drop is specified at a different test condition (1.25 V @ 200 mA versus 1 V @ 100 mA), and reverse leakage current is specified at 100 µA @ 200 V, representing a higher leakage value than the main part. The operating temperature range is -55°C to 150°C, which is narrower at the lower end compared to the main part (-65°C to 150°C). This part is suitable for substitution in applications where the higher reverse voltage rating and higher leakage current are acceptable. Inventory availability is 35,100 pcs.

All substitute parts maintain ROHS3 compliance, Active product status, and SOT-23-3 package configuration, ensuring mechanical and regulatory compatibility.

Frequently Asked Questions (FAQ)

Q: Can MMBD2004S-7-F be used as a direct replacement for MMBD2004SQ-7-F?

A: Yes. MMBD2004S-7-F is a parametric equivalent with identical electrical specifications, including reverse voltage (240 V), rectified current (225 mA), forward voltage drop (1 V @ 100 mA), reverse recovery time (50 ns), and reverse leakage current (100 nA @ 240 V). Both parts share the same manufacturer, base product number, and SOT-23-3 package configuration.

Q: What are the key differences between NSVBAS21SLT1G and MMBD2004SQ-7-F?

A: NSVBAS21SLT1G differs in three parameters: reverse voltage rating (250 V versus 240 V), forward voltage drop test condition (1.25 V @ 200 mA versus 1 V @ 100 mA), and reverse leakage current (100 µA @ 200 V versus 100 nA @ 240 V). The operating temperature range is also narrower at the lower end (-55°C to 150°C versus -65°C to 150°C). These differences must be evaluated against specific application requirements.

Q: Are all substitute parts available in the same packaging format?

A: Yes. All substitute parts are supplied in Tape & Reel (TR) packaging and feature the SOT-23-3 surface mount package configuration, ensuring compatibility with standard PCB assembly processes and equipment.

Q: Which substitute part has the highest inventory availability?

A: NSVBAS21SLT1G (onsemi) has the highest inventory availability at 35,100 pcs, followed by MMBD2004S-7-F (Diodes Incorporated) at 24,080 pcs, and GSD2004S-E3-08 (Vishay) at 2,780 pcs.

Q: Do all parts meet automotive qualification standards?

A: The main part MMBD2004SQ-7-F carries AEC-Q101 automotive qualification. The substitute parts MMBD2004S-7-F and GSD2004S-E3-08 are listed as Active products with ROHS3 compliance. NSVBAS21SLT1G is also listed as Active with ROHS3 compliance. Specific automotive qualification status for substitute parts should be confirmed with the respective manufacturers if automotive-grade certification is a design requirement.

Q: Can these parts be used interchangeably in high-temperature applications?

A: MMBD2004SQ-7-F, MMBD2004S-7-F, and GSD2004S-E3-08 all support operating temperatures up to 150°C. NSVBAS21SLT1G also supports 150°C maximum junction temperature. All parts are suitable for high-temperature applications within this range. The lower temperature limit differs: MMBD2004SQ-7-F and MMBD2004S-7-F support -65°C, while NSVBAS21SLT1G supports -55°C.

Q: What is the significance of the 50 ns reverse recovery time specification?

A: The 50 ns reverse recovery time indicates fast recovery diode characteristics, enabling rapid switching transitions and reduced switching losses. All substitute parts maintain this specification, ensuring equivalent performance in switching applications and high-frequency circuits.

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