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MJE5852 Equivalent & Substitute Parts
Part Overview
The MJE5852 is a PNP bipolar junction transistor (BJT) rated for 400 V collector-emitter breakdown voltage and 8 A maximum collector current, with an 80 W power dissipation rating in a Through Hole TO-220-3 package. The STMicroelectronics MJE5852 is classified as obsolete, necessitating identification of active equivalent parts for new designs and ongoing production requirements. The onsemi MJE5852G provides functional equivalence while maintaining active product status and full compliance with applicable standards.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | PNP | — |
| Current - Collector (Ic) (Max) | 8 | A |
| Voltage - Collector Emitter Breakdown (Max) | 400 | V |
| Power - Max | 80 | W |
| Vce Saturation (Max) @ Ib, Ic | 5V @ 3A, 8A | — |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 5 @ 5A, 5V | — |
| Package / Case | TO-220-3 | — |
| Mounting Type | Through Hole | — |
| RoHS Status | ROHS3 Compliant | — |
Substitute Part Grouping Explanation
Substitution of the MJE5852 with the MJE5852G is based on electrical and mechanical parameter equivalence. Both parts share identical specifications for the following critical parameters:
- Transistor Type: PNP
- Maximum Collector Current (Ic): 8 A
- Maximum Collector-Emitter Breakdown Voltage: 400 V
- Maximum Power Dissipation: 80 W
- Vce Saturation: 5V @ 3A, 8A
- DC Current Gain (hFE): 5 @ 5A, 5V
- Package / Case: TO-220-3
- Mounting Type: Through Hole
- RoHS Compliance: ROHS3 Compliant
- REACH Status: REACH Unaffected
- ECCN Classification: EAR99
- HTSUS Code: 8541.29.0095
The MJE5852G is manufactured by onsemi and carries active product status, making it suitable for direct substitution in applications currently using the obsolete STMicroelectronics MJE5852.
Parameter Comparison
| Parameter | MJE5852 (STMicroelectronics) | MJE5852G (onsemi) | Match |
|---|---|---|---|
| Transistor Type | PNP | PNP | Yes |
| Current - Collector (Ic) (Max) | 8 A | 8 A | Yes |
| Voltage - Collector Emitter Breakdown (Max) | 400 V | 400 V | Yes |
| Vce Saturation (Max) @ Ib, Ic | 5V @ 3A, 8A | 5V @ 3A, 8A | Yes |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 5 @ 5A, 5V | 5 @ 5A, 5V | Yes |
| Power - Max | 80 W | 80 W | Yes |
| Package / Case | TO-220-3 | TO-220-3 | Yes |
| Mounting Type | Through Hole | Through Hole | Yes |
| Operating Temperature (TJ) | 150°C | -65°C ~ 150°C | Compatible |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | Yes |
| REACH Status | REACH Unaffected | REACH Unaffected | Yes |
| Product Status | Obsolete | Active | Substitute Available |
Engineering Selection Recommendations
The MJE5852G (onsemi) is the direct equivalent substitute for the obsolete MJE5852 (STMicroelectronics). Selection of the MJE5852G is supported by the following factors:
Electrical Equivalence: All critical electrical parameters match exactly, including collector current rating, breakdown voltage, saturation characteristics, and current gain specifications.
Mechanical Compatibility: Both parts utilize the TO-220-3 package with Through Hole mounting, ensuring direct PCB compatibility without layout modifications.
Regulatory Compliance: The MJE5852G maintains ROHS3 compliance and REACH Unaffected status, matching the compliance profile of the original part.
Product Status: The MJE5852G carries active product status, ensuring long-term availability and supply chain continuity compared to the obsolete MJE5852.
Operating Temperature Range: The MJE5852G provides an extended operating temperature range (-65°C ~ 150°C) compared to the MJE5852 (150°C maximum), offering broader thermal operating capability.
Frequently Asked Questions (FAQ)
Q: Can the MJE5852G be used as a direct replacement for the MJE5852 in existing designs?
A: Yes. The MJE5852G is electrically and mechanically equivalent to the MJE5852. All critical parameters including collector current, breakdown voltage, power rating, saturation voltage, and current gain are identical. The TO-220-3 package and Through Hole mounting are unchanged, allowing direct substitution without circuit modifications.
Q: What is the primary reason for substituting the MJE5852?
A: The STMicroelectronics MJE5852 is classified as obsolete. The onsemi MJE5852G provides functional equivalence while maintaining active product status, ensuring continued availability for production and new designs.
Q: Are there any compliance differences between the MJE5852 and MJE5852G?
A: No. Both parts are ROHS3 compliant and REACH Unaffected. They share identical ECCN (EAR99) and HTSUS (8541.29.0095) classifications.
Q: Does the MJE5852G have a different operating temperature range?
A: The MJE5852G operates across -65°C to 150°C, while the MJE5852 is rated to 150°C maximum. The MJE5852G provides extended low-temperature capability. Both parts support the same maximum junction temperature of 150°C.
Q: Is the packaging identical between the two parts?
A: Yes. Both the MJE5852 and MJE5852G use the TO-220-3 package with Through Hole mounting. No PCB layout or mechanical modifications are required for substitution.
Q: What is the base product number for these parts?
A: The base product number is MJE585. Both the MJE5852 (STMicroelectronics) and MJE5852G (onsemi) are variants of this base product line.
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