MJE5731 Equivalent & Substitute Parts

Part Overview

The MJE5731 is a PNP bipolar junction transistor (BJT) rated for 350 V collector-emitter breakdown voltage and 1 A maximum collector current. Housed in a TO-220-3 through-hole package, this device is designed for general-purpose switching and amplification applications requiring moderate power dissipation up to 40 W.

The MJE5731 carries an obsolete product status. Locating equivalent substitute parts is necessary to maintain design continuity and ensure component availability for new production builds, repairs, and system upgrades.

Substiute Parts

MJE5731
onsemiIn Stock: 2240MJE5731 Datasheet
MJE5731
Current Part
MJE5731G
onsemiIn Stock: 1327MJE5731G Datasheet
MJE5731G
Direct

Key Parameters

Parameter Value Unit
Transistor Type PNP
Current - Collector (Ic) Max 1 A
Voltage - Collector Emitter Breakdown (Max) 350 V
Vce Saturation (Max) @ Ib, Ic 1 V @ 200 mA, 1 A
Current - Collector Cutoff (Max) 1 mA
DC Current Gain (hFE) Min @ Ic, Vce 30 @ 300 mA, 10 V
Power - Max 40 W
Frequency - Transition 10 MHz
Operating Temperature Range −65 to 150 °C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3

Substitute Part Grouping Explanation

Substitute parts for the MJE5731 are identified based on electrical and mechanical parameter equivalence. The following criteria determine substitution validity:

Electrical Parameters (Critical):

  • Transistor polarity: PNP
  • Maximum collector current: 1 A
  • Collector-emitter breakdown voltage: 350 V
  • Vce saturation characteristics: 1 V @ 200 mA, 1 A
  • Collector cutoff current: 1 mA
  • DC current gain (hFE): 30 minimum @ 300 mA, 10 V
  • Maximum power dissipation: 40 W
  • Transition frequency: 10 MHz
  • Operating temperature range: −65°C to 150°C

Mechanical Parameters (Critical):

  • Mounting type: Through Hole
  • Package designation: TO-220-3

Parts meeting all electrical and mechanical parameters are classified as direct substitutes. Packaging format (tube, tape, or bulk) does not affect electrical substitution eligibility.

Parameter Comparison

Parameter MJE5731 MJE5731G Match
Manufacturer onsemi onsemi Yes
Transistor Type PNP PNP Yes
Current - Collector (Ic) Max 1 A 1 A Yes
Voltage - Collector Emitter Breakdown (Max) 350 V 350 V Yes
Vce Saturation (Max) @ Ib, Ic 1 V @ 200 mA, 1 A 1 V @ 200 mA, 1 A Yes
Current - Collector Cutoff (Max) 1 mA 1 mA Yes
DC Current Gain (hFE) Min @ Ic, Vce 30 @ 300 mA, 10 V 30 @ 300 mA, 10 V Yes
Power - Max 40 W 40 W Yes
Frequency - Transition 10 MHz 10 MHz Yes
Operating Temperature Range −65°C to 150°C (TJ) −65°C to 150°C (TJ) Yes
Mounting Type Through Hole Through Hole Yes
Package / Case TO-220-3 TO-220-3 Yes
Product Status Obsolete Active Different
RoHS Status RoHS non-compliant ROHS3 Compliant Different

Engineering Selection Recommendations

MJE5731G is a direct electrical and mechanical substitute for the MJE5731. All critical electrical parameters—collector current, breakdown voltage, saturation characteristics, current gain, power rating, and frequency response—are identical. Both devices share the same TO-220-3 through-hole package and operate across the same temperature range.

The primary distinction between these parts is product lifecycle status and regulatory compliance:

  • MJE5731: Obsolete product status; RoHS non-compliant
  • MJE5731G: Active product status; ROHS3 compliant

For new designs and production applications, MJE5731G is the appropriate selection due to its active availability and regulatory compliance. For legacy system repairs or applications where RoHS compliance is not required, MJE5731 remains functionally equivalent if inventory is available.

Both parts carry identical REACH and ECCN classifications (REACH Unaffected, EAR99), indicating no additional regulatory restrictions on substitution.

Frequently Asked Questions (FAQ)

Q: Can MJE5731G replace MJE5731 in existing circuit designs?

A: Yes. MJE5731G is electrically and mechanically identical to MJE5731. All electrical parameters—voltage, current, gain, and frequency specifications—match exactly. The TO-220-3 package pinout and thermal characteristics are identical, enabling direct board-level substitution without circuit modification.

Q: What is the difference between MJE5731 and MJE5731G?

A: The devices are electrically equivalent. MJE5731G differs in product status (active versus obsolete) and regulatory compliance (ROHS3 compliant versus RoHS non-compliant). MJE5731G is the current production variant.

Q: Are there packaging differences between MJE5731 and MJE5731G?

A: Both devices use the TO-220-3 through-hole package. The primary packaging difference is the supplier delivery format: MJE5731 may be supplied in various formats, while MJE5731G is specified as tube packaging. This does not affect electrical performance or board-level compatibility.

Q: Is MJE5731G suitable for new product designs?

A: Yes. MJE5731G is the recommended choice for new designs. It carries active product status and ROHS3 compliance, ensuring long-term availability and regulatory alignment with current manufacturing standards.

Q: What are the critical parameters for substitution?

A: Substitution validity depends on matching: transistor polarity (PNP), maximum collector current (1 A), collector-emitter breakdown voltage (350 V), saturation voltage (1 V @ 200 mA, 1 A), current gain (30 minimum @ 300 mA, 10 V), power rating (40 W), transition frequency (10 MHz), operating temperature range (−65°C to 150°C), and package type (TO-220-3 through-hole). All parameters must align for direct substitution.

Q: Can MJE5731 be used in applications requiring RoHS compliance?

A: No. MJE5731 is RoHS non-compliant. Applications requiring RoHS compliance must use MJE5731G, which carries ROHS3 certification.

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