MJE5730 Equivalent & Substitute Parts

Part Overview

The MJE5730 is a PNP bipolar junction transistor (BJT) rated for 300 V collector-emitter breakdown voltage and 1 A maximum collector current. Housed in a TO-220-3 through-hole package, this device is designed for general-purpose switching and amplification applications requiring moderate power dissipation up to 40 W.

The MJE5730 is classified as obsolete product status. Locating equivalent substitute parts is necessary to ensure design continuity, maintain supply chain reliability, and support ongoing production requirements for applications utilizing this transistor type.

Substiute Parts

MJE5730

onsemiIn Stock: 1972MJE5730 Datasheet

Current PartRFQ

MJE5730G

onsemiIn Stock: 2853MJE5730G Datasheet

DirectRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the MJE5730 is determined by strict equivalence across all critical electrical and mechanical parameters. The substitute part must satisfy the following criteria:

Electrical Parameters (Must Match Exactly):

• Transistor type: PNP
• Maximum collector current (Ic): 1 A
• Collector-emitter breakdown voltage: 300 V
• Vce saturation: 1 V @ 200 mA, 1 A
• Maximum collector cutoff current: 1 mA
• Minimum DC current gain (hFE): 30 @ 300 mA, 10 V
• Maximum power dissipation: 40 W
• Transition frequency: 10 MHz
• Operating temperature range: -65°C to 150°C

Mechanical Parameters (Must Match Exactly):

• Mounting type: Through Hole
• Package designation: TO-220-3

Parts meeting these criteria are classified as direct electrical and mechanical equivalents and may be substituted without circuit redesign or thermal management modifications.

Parameter Comparison

Engineering Selection Recommendations

MJE5730G is the direct substitute for MJE5730. Both parts are manufactured by onsemi and exhibit identical electrical and mechanical specifications across all rated parameters.

The primary distinction between these parts is product lifecycle status and regulatory compliance:

• MJE5730 carries obsolete product status and RoHS non-compliant classification
• MJE5730G carries active product status and RoHS3 compliant classification

For new designs or production requiring regulatory compliance with RoHS3 standards, MJE5730G is the appropriate selection. For legacy system maintenance where RoHS compliance is not a requirement, either part satisfies the electrical and mechanical specifications.

Both parts are supplied in TO-220-3 through-hole packages and operate across the identical temperature range of -65°C to 150°C junction temperature.

Frequently Asked Questions (FAQ)

Q: Can MJE5730G be used as a direct replacement for MJE5730 in existing circuits?

A: Yes. MJE5730G is electrically and mechanically equivalent to MJE5730. All rated parameters including collector current, breakdown voltage, saturation characteristics, current gain, power dissipation, and operating temperature range are identical. No circuit modifications are required.

Q: What is the difference between MJE5730 and MJE5730G?

A: The parts are electrically identical. MJE5730G is the active production variant with RoHS3 compliance, while MJE5730 is classified as obsolete and RoHS non-compliant. Both are manufactured by onsemi in TO-220-3 packages.

Q: Are there packaging differences between MJE5730 and MJE5730G?

A: Both parts use the TO-220-3 through-hole package. The primary packaging difference is that MJE5730G is supplied in tube packaging, while MJE5730 packaging format is not specified in the available data. This distinction does not affect electrical performance or circuit compatibility.

Q: What are the key electrical parameters that define substitution for this transistor?

A: Substitution is determined by matching the following parameters: PNP transistor type, 1 A maximum collector current, 300 V collector-emitter breakdown voltage, 1 V saturation voltage at specified bias conditions, 1 mA maximum cutoff current, 30 minimum DC current gain, 40 W maximum power dissipation, 10 MHz transition frequency, and -65°C to 150°C operating temperature range.

Q: Is MJE5730G suitable for new product designs?

A: Yes. MJE5730G is classified as active product status and carries RoHS3 compliance certification, making it appropriate for new designs where regulatory compliance is required. The part meets all electrical specifications for general-purpose PNP switching and amplification applications in the 1 A, 300 V class.

Q: What mounting considerations apply to these transistors?

A: Both MJE5730 and MJE5730G are through-hole mounted devices in TO-220-3 packages. They require PCB mounting holes and mechanical fastening to a heatsink for thermal management in applications approaching the 40 W power dissipation limit. Thermal design considerations remain identical between the two parts.