MJE371 Equivalent & Substitute Parts

Part Overview

The MJE371 is a PNP bipolar junction transistor (BJT) manufactured by onsemi, designed for through-hole applications in the TO-126 package. This component delivers 4 A collector current with a 40 V collector-emitter breakdown voltage and 40 W maximum power dissipation. The MJE371 is classified as obsolete, making identification of equivalent and substitute parts essential for ongoing design support and production continuity. Active alternatives with identical electrical and mechanical specifications are available to ensure uninterrupted component availability.

Substiute Parts

MJE371
onsemiIn Stock: 1599MJE371 Datasheet
MJE371
Current Part
MJE371G
onsemiIn Stock: 3215MJE371G Datasheet
MJE371G
Direct

Key Parameters

Parameter Value
Transistor Type PNP
Current - Collector (Ic) (Max) 4 A
Voltage - Collector Emitter Breakdown (Max) 40 V
Current - Collector Cutoff (Max) 100 µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 1A, 1V
Power - Max 40 W
Operating Temperature Range -65°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Supplier Device Package TO-126

Substitute Part Grouping Explanation

Substitution of the MJE371 is determined by strict equivalence across all critical electrical and mechanical parameters. The substitute part must satisfy the following criteria:

Electrical Parameters (Must Match):

  • Transistor Type: PNP
  • Maximum Collector Current (Ic): 4 A
  • Maximum Collector-Emitter Breakdown Voltage: 40 V
  • Maximum Collector Cutoff Current (ICBO): 100 µA
  • Minimum DC Current Gain (hFE): 40 @ 1A, 1V
  • Maximum Power Dissipation: 40 W
  • Operating Temperature Range: -65°C ~ 150°C (TJ)

Mechanical Parameters (Must Match):

  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-126

Only components meeting all specified parameters are classified as direct substitutes. Packaging format (bulk versus other configurations) does not affect electrical or mechanical compatibility.

Parameter Comparison

Parameter MJE371 MJE371G Match
Manufacturer onsemi onsemi Yes
Category Transistors, Bipolar (BJT) Transistors, Bipolar (BJT) Yes
Transistor Type PNP PNP Yes
Current - Collector (Ic) (Max) 4 A 4 A Yes
Voltage - Collector Emitter Breakdown (Max) 40 V 40 V Yes
Current - Collector Cutoff (Max) 100 µA (ICBO) 100 µA (ICBO) Yes
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 1A, 1V 40 @ 1A, 1V Yes
Power - Max 40 W 40 W Yes
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) Yes
Mounting Type Through Hole Through Hole Yes
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3 Yes
Supplier Device Package TO-126 TO-126 Yes
Product Status Obsolete Active Different
RoHS Status RoHS non-compliant ROHS3 Compliant Different
REACH Status REACH Unaffected REACH Unaffected Yes
ECCN EAR99 EAR99 Yes
HTSUS 8541.29.0095 8541.29.0095 Yes

Engineering Selection Recommendations

MJE371G is the direct electrical and mechanical equivalent of the MJE371. Both components share identical specifications across all critical parameters: PNP transistor type, 4 A maximum collector current, 40 V breakdown voltage, 40 W power rating, TO-126 package, and -65°C to 150°C operating temperature range.

The primary distinction between these parts is product status and regulatory compliance:

  • MJE371: Obsolete product status with RoHS non-compliant classification
  • MJE371G: Active product status with ROHS3 compliance

For new designs and production continuity, MJE371G is the appropriate selection. This part maintains full electrical and mechanical compatibility while offering active manufacturer support and compliance with current regulatory requirements. The MJE371G is available in bulk packaging format and provides equivalent performance in all circuit applications where the MJE371 was previously specified.

Frequently Asked Questions (FAQ)

Q: Can MJE371G be used as a direct replacement for MJE371?

A: Yes. MJE371G is a direct substitute for MJE371. Both components are manufactured by onsemi and share identical electrical specifications (4 A collector current, 40 V breakdown voltage, 40 W power rating, 40 minimum hFE) and mechanical specifications (TO-126 through-hole package, -65°C to 150°C operating temperature). The components are pin-compatible and functionally equivalent.

Q: What is the difference between MJE371 and MJE371G?

A: The MJE371 is classified as obsolete, while MJE371G is an active product. Additionally, MJE371G meets ROHS3 compliance standards, whereas MJE371 is RoHS non-compliant. All electrical and mechanical parameters are identical between the two parts.

Q: Are there any package or pinout differences between these parts?

A: No. Both MJE371 and MJE371G use the TO-126 through-hole package with identical pinout and mechanical dimensions. They are mechanically interchangeable in PCB layouts and circuit designs.

Q: Why is the MJE371 listed as obsolete?

A: The MJE371 has reached end-of-life status with the manufacturer. MJE371G is the active equivalent that provides continued availability and support for this transistor specification.

Q: Does the packaging format (bulk) affect compatibility?

A: No. Packaging format refers only to how components are supplied (bulk, tape and reel, etc.) and does not affect electrical or mechanical compatibility. MJE371G supplied in bulk packaging is electrically and mechanically identical to other packaging formats of the same part number.

Q: What are the key parameters that determine substitution eligibility?

A: Substitution is determined by matching: transistor type (PNP), maximum collector current (4 A), maximum breakdown voltage (40 V), maximum power dissipation (40 W), DC current gain (40 minimum @ 1A, 1V), operating temperature range (-65°C to 150°C), and package type (TO-126 through-hole). All these parameters must match exactly for a part to be considered a direct substitute.

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