MJE210TG Equivalent & Substitute Parts

Part Overview

The MJE210TG is a PNP bipolar junction transistor manufactured by onsemi, designed for general-purpose switching and amplification applications. This device features a maximum collector current of 5 A, collector-emitter breakdown voltage of 40 V, and maximum power dissipation of 15 W in a Through Hole TO-126 package. The MJE210TG is classified as an Obsolete product, necessitating identification of equivalent substitute components for ongoing design support and procurement continuity.

Substiute Parts

MJE210TG
onsemiIn Stock: 1236MJE210TG Datasheet
MJE210TG
Current Part
MJE210G
onsemiIn Stock: 27754MJE210G Datasheet
MJE210G
Direct

Key Parameters

Parameter Value
Transistor Type PNP
Current - Collector (Ic) (Max) 5 A
Voltage - Collector Emitter Breakdown (Max) 40 V
Vce Saturation (Max) @ Ib, Ic 1.8V @ 1A, 5A
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 45 @ 2A, 1V
Power - Max 15 W
Frequency - Transition 65MHz
Operating Temperature -65°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Supplier Device Package TO-126

Substitute Part Grouping Explanation

Substitution of the MJE210TG is determined by electrical and mechanical parameter equivalence. The substitute part must satisfy the following criteria:

Electrical Parameters:

  • Transistor Type: PNP
  • Maximum Collector Current: 5 A
  • Maximum Collector-Emitter Breakdown Voltage: 40 V
  • Vce Saturation: 1.8V @ 1A, 5A
  • Maximum Collector Cutoff Current: 100nA (ICBO)
  • Minimum DC Current Gain (hFE): 45 @ 2A, 1V
  • Maximum Power Dissipation: 15 W
  • Transition Frequency: 65MHz
  • Operating Temperature Range: -65°C ~ 150°C (TJ)

Mechanical Parameters:

  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-126

The MJE210G meets all specified electrical and mechanical parameters and is therefore a direct equivalent substitute for the MJE210TG.

Parameter Comparison

Parameter MJE210TG MJE210G
Manufacturer onsemi onsemi
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 5 A 5 A
Voltage - Collector Emitter Breakdown (Max) 40 V 40 V
Vce Saturation (Max) @ Ib, Ic 1.8V @ 1A, 5A 1.8V @ 1A, 5A
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 45 @ 2A, 1V 45 @ 2A, 1V
Power - Max 15 W 15 W
Frequency - Transition 65MHz 65MHz
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3
Supplier Device Package TO-126 TO-126
Product Status Obsolete Last Time Buy
REACH Status REACH Unaffected REACH Unaffected
ECCN EAR99 EAR99
HTSUS 8541.29.0075 8541.29.0075

Engineering Selection Recommendations

The MJE210G is the direct equivalent substitute for the MJE210TG. Both components are manufactured by onsemi and share identical electrical and mechanical specifications across all critical parameters. The MJE210G is classified as Last Time Buy status, indicating continued availability with a defined end-of-life timeline. Both parts maintain REACH Unaffected status and EAR99 export classification, ensuring regulatory compliance consistency.

The MJE210G is available in Bulk packaging, whereas the MJE210TG packaging specification is not defined in the provided data. Both components are housed in the TO-126 package suitable for Through Hole mounting applications. Selection between these parts should be based on procurement timeline and inventory requirements, as the MJE210TG is Obsolete while the MJE210G remains available under Last Time Buy conditions.

Frequently Asked Questions (FAQ)

Q: Can the MJE210G directly replace the MJE210TG in existing designs?

A: Yes. The MJE210G is a direct electrical and mechanical equivalent. All electrical parameters, including collector current, breakdown voltage, saturation characteristics, current gain, power dissipation, and frequency response are identical. Both components use the TO-126 Through Hole package with identical pinout and mechanical dimensions.

Q: What is the difference between the MJE210TG and MJE210G?

A: The primary difference is product status. The MJE210TG is Obsolete, while the MJE210G is Last Time Buy. Both parts are manufactured by onsemi and share identical electrical and mechanical specifications. The MJE210G is currently available in higher inventory quantities.

Q: Are there any compliance or certification differences between these parts?

A: No. Both the MJE210TG and MJE210G maintain identical REACH Unaffected status and EAR99 export classification. Both components are subject to the same regulatory framework and compliance requirements.

Q: What packaging options are available for the MJE210G?

A: The MJE210G is supplied in Bulk packaging. The component is housed in the TO-126 package suitable for Through Hole mounting applications.

Q: Is the TO-126 package compatible with existing PCB designs for the MJE210TG?

A: Yes. Both the MJE210TG and MJE210G use the TO-126 package with identical mechanical dimensions and Through Hole mounting requirements. PCB layouts and footprints designed for the MJE210TG are directly compatible with the MJE210G.

Q: What is the operating temperature range for these transistors?

A: Both the MJE210TG and MJE210G operate across a junction temperature range of -65°C to 150°C (TJ), providing consistent thermal performance across both components.

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