MJE180PWD Equivalent & Substitute Parts

Part Overview

The MJE180PWD is an NPN bipolar junction transistor manufactured by onsemi, rated for 40V collector-emitter breakdown voltage and 3A maximum collector current. This device is packaged in a TO-126 through-hole configuration and is designed for general-purpose switching and amplification applications requiring 1.5W power dissipation capability.

The MJE180PWD is classified as obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity and ensure component availability for production, repair, and long-term system support.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Collector Current (Max)	3	A
Collector-Emitter Breakdown Voltage (Max)	40	V
Vce Saturation (Max)	1.7	V @ 600mA, 3A
Collector Cutoff Current (Max)	100	nA
DC Current Gain (hFE Min)	50	@ 100mA, 1V
Maximum Power Dissipation	1.5	W
Transition Frequency	50	MHz
Operating Temperature (Max)	150	°C
Mounting Type	Through Hole	—
Package	TO-126	—

Substitute Part Grouping Explanation

Substitute parts for the MJE180PWD are identified based on strict electrical and mechanical parameter matching. All substitute devices must satisfy the following criteria:

Electrical Parameters (Required Match):

Transistor Type: NPN
Collector Current (Max): 3 A
Collector-Emitter Breakdown Voltage (Max): 40 V
Vce Saturation (Max): 1.7V @ 600mA, 3A
DC Current Gain (hFE Min): 50 @ 100mA, 1V
Maximum Power Dissipation: 1.5 W
Transition Frequency: 50 MHz

Mechanical Parameters (Required Match):

Mounting Type: Through Hole
Package: TO-126 or TO-126-3

Substitute parts are classified into two categories:

Direct Manufacturer Substitute: MJE180STU (Fairchild Semiconductor) — functionally identical with matching electrical specifications and compatible package designation.

Parametric Equivalent: MJE180G (onsemi) and MJE180 PBFREE (Central Semiconductor Corp) — devices with identical electrical performance and package compatibility, differing only in product status, compliance certifications, or packaging format.

Parameter Comparison

Parameter	MJE180PWD (onsemi)	MJE180STU (Fairchild)	MJE180G (onsemi)	MJE180 PBFREE (Central Semi)
Transistor Type	NPN	NPN	NPN	NPN
Ic (Max)	3 A	3 A	3 A	3 A
Vce Breakdown (Max)	40 V	40 V	40 V	40 V
Vce Saturation (Max)	1.7V @ 600mA, 3A	1.7V @ 600mA, 3A	1.7V @ 600mA, 3A	1.7V @ 600mA, 3A
hFE (Min)	50 @ 100mA, 1V	50 @ 100mA, 1V	50 @ 100mA, 1V	50 @ 100mA, 1V
Power (Max)	1.5 W	1.5 W	1.5 W	1.5 W
Frequency - Transition	50 MHz	50 MHz	50 MHz	50 MHz
Operating Temperature (Max)	150°C	150°C	150°C	150°C
Package	TO-126	TO-126-3	TO-126	TO-126
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Product Status	Obsolete	Active	Active	Obsolete
RoHS Status	Not specified	Not specified	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

For New Designs and Active Production:

MJE180G (onsemi) is the primary recommended substitute. This device maintains active product status, carries ROHS3 compliance certification, and is manufactured by the original equipment supplier. Electrical and mechanical parameters are identical to the MJE180PWD. Inventory availability is 1443 units.

For Cross-Manufacturer Substitution:

MJE180STU (Fairchild Semiconductor) provides a direct alternative with active product status. All electrical specifications match the MJE180PWD. The package designation is TO-126-3, which is mechanically compatible with TO-126 applications. Inventory availability is 6750 units, providing extended supply security.

For Legacy System Maintenance:

MJE180 PBFREE (Central Semiconductor Corp) is electrically and mechanically equivalent but carries obsolete product status. This part is suitable only for repair and maintenance of existing systems where component continuity is required. ROHS3 compliance is certified. Inventory availability is 2042 units.

Selection Criteria:

Active Production: Use MJE180G
Cross-Manufacturer Requirement: Use MJE180STU
Legacy System Support: Use MJE180 PBFREE
High-Volume Supply Requirement: Use MJE180STU (6750 units available)

Frequently Asked Questions (FAQ)

Q: Can MJE180STU replace MJE180PWD in existing designs?

A: Yes. MJE180STU is electrically and mechanically equivalent. All electrical parameters match exactly. The package designation TO-126-3 is compatible with TO-126 through-hole applications. Pin configuration and thermal characteristics are identical.

Q: What is the difference between MJE180G and MJE180PWD?

A: Both devices are NPN transistors with identical electrical specifications: 3A collector current, 40V breakdown voltage, 1.5W power rating, and 50MHz transition frequency. The primary difference is product status: MJE180PWD is obsolete, while MJE180G is active. MJE180G includes ROHS3 compliance certification.

Q: Is MJE180 PBFREE suitable for new production?

A: No. MJE180 PBFREE is classified as obsolete and is intended for legacy system maintenance only. For new production, use MJE180G or MJE180STU, both of which carry active product status.

Q: Are all substitute parts available in the same packaging format?

A: All substitute parts use through-hole mounting in TO-126 or TO-126-3 packages. These package designations are mechanically compatible. Pinout and lead spacing are identical across all listed substitutes.

Q: Which substitute has the highest inventory availability?

A: MJE180STU (Fairchild Semiconductor) has 6750 units in stock, providing the highest inventory availability among all listed substitutes.

Q: Do the substitute parts have the same thermal characteristics?

A: Yes. All substitute parts are rated for maximum 1.5W power dissipation and 150°C operating temperature. Thermal performance in TO-126 packages is equivalent across all listed devices.

Q: Can I use MJE180 PBFREE in applications requiring ROHS3 compliance?

A: Yes. MJE180 PBFREE carries ROHS3 compliance certification. However, for new designs, MJE180G is the preferred choice due to active product status.

Q: What is the collector cutoff current specification for the substitutes?

A: MJE180STU specifies 100µA collector cutoff current (ICBO), while MJE180G and MJE180 PBFREE specify 100nA. Both values are within acceptable leakage parameters for general-purpose switching applications.

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