MJE172 Equivalent & Substitute Parts

Part Overview

The MJE172 is a through-hole PNP bipolar junction transistor manufactured by onsemi, rated for 80 V collector-emitter breakdown voltage and 3 A maximum collector current. The device is packaged in TO-126 configuration and operates across a temperature range of -65°C to 150°C. The MJE172 is classified as obsolete, which necessitates identification of active equivalent parts for new designs and ongoing production requirements. Substitute parts must maintain electrical and mechanical compatibility while meeting current manufacturing and compliance standards.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP	—
Current - Collector (Ic) (Max)	3	A
Voltage - Collector Emitter Breakdown (Max)	80	V
Vce Saturation (Max) @ Ib, Ic	1.7 @ 600mA, 3A	V
Current - Collector Cutoff (Max)	100	nA
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 100mA, 1V	—
Power - Max	1.5	W
Frequency - Transition	50	MHz
Operating Temperature	-65 to 150	°C
Mounting Type	Through Hole	—
Package / Case	TO-126-3	—

Substitute Part Grouping Explanation

Substitution of the MJE172 is determined by strict equivalence across the following electrical and mechanical parameters:

Transistor Type: PNP configuration
Maximum Collector Current: 3 A
Collector-Emitter Breakdown Voltage: 80 V
Saturation Voltage: 1.7 V @ 600mA, 3A
Collector Cutoff Current: 100 nA (ICBO)
DC Current Gain (hFE): Minimum 50 @ 100mA, 1V
Maximum Power Dissipation: 1.5 W
Transition Frequency: 50 MHz
Operating Temperature Range: -65°C to 150°C
Package Configuration: TO-126-3 through-hole

The MJE172G meets all specified electrical parameters and maintains identical mechanical compatibility. The primary distinction is product status and compliance certification.

Parameter Comparison

Parameter	MJE172	MJE172G	Match
Transistor Type	PNP	PNP	✓
Current - Collector (Ic) (Max)	3 A	3 A	✓
Voltage - Collector Emitter Breakdown (Max)	80 V	80 V	✓
Vce Saturation (Max) @ Ib, Ic	1.7V @ 600mA, 3A	1.7V @ 600mA, 3A	✓
Current - Collector Cutoff (Max)	100 nA	100 nA	✓
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 100mA, 1V	50 @ 100mA, 1V	✓
Power - Max	1.5 W	1.5 W	✓
Frequency - Transition	50 MHz	50 MHz	✓
Operating Temperature	-65°C ~ 150°C	-65°C ~ 150°C	✓
Mounting Type	Through Hole	Through Hole	✓
Package / Case	TO-126-3	TO-126-3	✓
Product Status	Obsolete	Active	—
RoHS Status	Non-compliant	ROHS3 Compliant	—

Engineering Selection Recommendations

The MJE172G is the direct substitute for the MJE172 across all electrical and mechanical specifications. All critical parameters—collector current, breakdown voltage, saturation characteristics, gain, power rating, frequency response, and temperature range—are identical.

The MJE172G carries active product status, ensuring continued availability and manufacturing support. The MJE172G is ROHS3 compliant, meeting current environmental and regulatory requirements, whereas the MJE172 is non-compliant. For new designs and production applications, the MJE172G is the appropriate selection. For legacy systems currently using the MJE172, direct substitution with the MJE172G is electrically and mechanically valid without circuit modification.

Frequently Asked Questions (FAQ)

Q: Can the MJE172G be used as a direct replacement for the MJE172 in existing circuits?

A: Yes. The MJE172G is electrically and mechanically equivalent to the MJE172. All electrical parameters, including collector current, breakdown voltage, saturation voltage, gain, power dissipation, and frequency response, are identical. The TO-126-3 package configuration is unchanged. No circuit modifications are required.

Q: What is the primary reason to transition from MJE172 to MJE172G?

A: The MJE172 is classified as obsolete, limiting future availability and manufacturing support. The MJE172G is an active product with ongoing production. Additionally, the MJE172G is ROHS3 compliant, meeting current environmental regulations, whereas the MJE172 is non-compliant.

Q: Are there any differences in packaging or handling between the MJE172 and MJE172G?

A: Both devices use the TO-126-3 through-hole package. The MJE172G is supplied in bulk packaging, whereas the MJE172 packaging specification is not detailed. Both devices have moisture sensitivity level (MSL) ratings appropriate for their respective product classifications. No special handling differences apply to the electrical or mechanical interface.

Q: What electrical parameters determine substitution compatibility for PNP transistors in this category?

A: Substitution compatibility is determined by matching the following parameters: transistor type (PNP), maximum collector current (3 A), collector-emitter breakdown voltage (80 V), saturation voltage (1.7 V @ 600mA, 3A), collector cutoff current (100 nA), DC current gain (50 @ 100mA, 1V minimum), maximum power dissipation (1.5 W), transition frequency (50 MHz), operating temperature range (-65°C to 150°C), and package configuration (TO-126-3).

Q: Is the MJE172G suitable for high-temperature applications?

A: Yes. The MJE172G operates across the temperature range of -65°C to 150°C, identical to the MJE172. This range supports both cryogenic and elevated-temperature applications within the specified limits.

Q: What is the significance of the ROHS3 compliance on the MJE172G?

A: ROHS3 compliance indicates that the MJE172G meets the Restriction of Hazardous Substances Directive, restricting the use of specific hazardous materials in electrical and electronic equipment. This certification is required for products sold in regulated markets and reflects current manufacturing standards. The MJE172, being non-compliant, does not meet these requirements.

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