MJE15033 Equivalent & Substitute Parts

Part Overview

The MJE15033 is a through-hole PNP bipolar junction transistor manufactured by onsemi, rated for 250 V collector-emitter breakdown voltage and 8 A maximum collector current. This device is designed for general-purpose switching and amplification applications requiring moderate power dissipation up to 50 W. The MJE15033 is classified as obsolete, which necessitates identification of equivalent substitute components for ongoing design support and procurement continuity. Active equivalent models are available to maintain circuit functionality in new production runs and replacement applications.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP	—
Current - Collector (Ic) Max	8	A
Voltage - Collector Emitter Breakdown (Max)	250	V
Vce Saturation (Max)	500 mV @ 100 mA, 1 A	—
Current - Collector Cutoff (Max)	10	µA
DC Current Gain (hFE) Min	10 @ 2 A, 5 V	—
Power - Max	50	W
Frequency - Transition	30	MHz
Operating Temperature Range	-65 to 150	°C
Mounting Type	Through Hole	—
Package / Case	TO-220-3	—

Substitute Part Grouping Explanation

Substitution of the MJE15033 is determined by electrical and mechanical parameter equivalence. The substitute part must satisfy all of the following criteria:

Transistor Type: PNP configuration
Current Rating: 8 A maximum collector current
Voltage Rating: 250 V collector-emitter breakdown voltage
Saturation Characteristics: 500 mV Vce saturation at specified base and collector currents
Leakage Current: 10 µA maximum collector cutoff current
DC Current Gain: Minimum 10 hFE at 2 A collector current and 5 V Vce
Power Dissipation: 50 W maximum
Frequency Response: 30 MHz transition frequency
Temperature Range: -65°C to 150°C operating junction temperature
Package: TO-220-3 through-hole configuration

The MJE15033G meets all electrical and mechanical specifications identical to the MJE15033, with the primary distinction being product status and compliance certification.

Parameter Comparison

Parameter	MJE15033	MJE15033G	Match
Transistor Type	PNP	PNP	✓
Current - Collector (Ic) Max	8 A	8 A	✓
Voltage - Collector Emitter Breakdown (Max)	250 V	250 V	✓
Vce Saturation (Max)	500 mV @ 100 mA, 1 A	500 mV @ 100 mA, 1 A	✓
Current - Collector Cutoff (Max)	10 µA	10 µA	✓
DC Current Gain (hFE) Min	10 @ 2 A, 5 V	10 @ 2 A, 5 V	✓
Power - Max	50 W	50 W	✓
Frequency - Transition	30 MHz	30 MHz	✓
Operating Temperature Range	-65 to 150 °C	-65 to 150 °C	✓
Mounting Type	Through Hole	Through Hole	✓
Package / Case	TO-220-3	TO-220-3	✓
Product Status	Obsolete	Active	—
RoHS Status	RoHS Non-Compliant	ROHS3 Compliant	—

Engineering Selection Recommendations

The MJE15033G is the direct electrical and mechanical equivalent of the MJE15033. All specified electrical parameters, including current rating, voltage rating, saturation characteristics, gain, power dissipation, frequency response, and operating temperature range, are identical between the two devices.

The primary distinctions are product status and regulatory compliance:

MJE15033: Obsolete status; RoHS non-compliant
MJE15033G: Active status; ROHS3 compliant

For new designs and production applications, the MJE15033G is the appropriate selection due to its active product status and compliance with current environmental regulations. For legacy system maintenance where the original MJE15033 is specified, the MJE15033G provides full functional and mechanical compatibility without circuit modification.

Both devices are manufactured by onsemi and carry identical REACH and ECCN classifications. The packaging difference (tube for MJE15033G versus unspecified for MJE15033) does not affect electrical performance or circuit integration.

Frequently Asked Questions (FAQ)

Q: Can the MJE15033G be used as a direct replacement for the MJE15033 in existing circuits?

A: Yes. The MJE15033G is electrically and mechanically identical to the MJE15033. All electrical parameters, including current, voltage, gain, and frequency specifications, are equivalent. The TO-220-3 package dimensions and pin configuration are identical, enabling direct substitution without circuit modification.

Q: What is the difference between the MJE15033 and MJE15033G?

A: The electrical and mechanical specifications are identical. The MJE15033 is classified as obsolete, while the MJE15033G is active. The MJE15033G is ROHS3 compliant, whereas the MJE15033 is RoHS non-compliant. The MJE15033G is supplied in tube packaging.

Q: Are there any thermal or performance differences between these devices?

A: No. Both devices have identical maximum power dissipation (50 W), operating temperature range (-65°C to 150°C), and thermal characteristics. Performance in switching and amplification applications is equivalent.

Q: Can the MJE15033G be used in high-frequency applications?

A: Both devices have a transition frequency of 30 MHz. Applications requiring operation at or below this frequency are suitable for either device. Applications requiring higher frequency response require alternative component selection.

Q: Is the MJE15033G suitable for new product designs?

A: Yes. The MJE15033G is active and ROHS3 compliant, making it appropriate for new designs. The MJE15033, being obsolete, is not recommended for new product development.

Q: What is the maximum collector current for these transistors?

A: Both the MJE15033 and MJE15033G are rated for a maximum collector current of 8 A at the specified voltage and temperature conditions.

Q: Are these devices suitable for linear amplification or switching applications?

A: These PNP transistors are designed for general-purpose switching and amplification. The DC current gain of 10 (minimum) at 2 A collector current and 5 V Vce supports both application categories within the specified electrical limits.

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