MJE13003B-AP Equivalent & Substitute Parts

Part Overview

The MJE13003B-AP is a Bipolar (BJT) NPN transistor manufactured by Micro Commercial Co, designed for high-voltage switching and amplification applications. This component features a 400 V collector-emitter breakdown voltage rating with a maximum collector current of 1.5 A and 1 W power dissipation capability in a Through Hole TO-92 package.

The MJE13003B-AP is classified as Obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this transistor.

Substiute Parts

MJE13003B-AP

Micro Commercial CoIn Stock: 1064MJE13003B-AP Datasheet

Current PartRFQ

PHD13003C,412

WeEn SemiconductorsIn Stock: 8228PHD13003C,412 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the MJE13003B-AP is determined by strict equivalence across the following critical electrical and mechanical parameters:

Electrical Equivalence Criteria:

• Transistor Type: NPN configuration
• Maximum Collector Current (Ic): 1.5 A
• Collector-Emitter Breakdown Voltage: 400 V
• Mounting Type: Through Hole
• Package Type: TO-92-3

Compliance Criteria:

• RoHS3 Compliance
• Moisture Sensitivity Level (MSL): 1 (Unlimited)

The PHD13003C,412 manufactured by WeEn Semiconductors meets all primary electrical and mechanical substitution criteria. This part maintains identical maximum collector current and breakdown voltage ratings, operates within the same temperature range, and utilizes the same Through Hole TO-92-3 package configuration. Both parts are RoHS3 compliant with MSL 1 rating.

Parameter Comparison

Engineering Selection Recommendations

PHD13003C,412 as Primary Substitute:

The PHD13003C,412 is the qualified substitute for the obsolete MJE13003B-AP. This selection is based on the following engineering factors:

1. Electrical Compatibility: Both parts share identical maximum collector current (1.5 A) and collector-emitter breakdown voltage (400 V) ratings, ensuring direct functional equivalence in circuit applications.

2. Package Compatibility: Both components utilize the TO-92-3 Through Hole package, enabling direct mechanical substitution without PCB redesign.

3. Compliance Status: The PHD13003C,412 maintains ROHS3 compliance and MSL 1 rating, matching the environmental and regulatory requirements of the original part.

4. Product Availability: The PHD13003C,412 is classified as Active, providing assured long-term supply availability compared to the Obsolete status of the MJE13003B-AP.

5. Enhanced Performance Margin: The PHD13003C,412 offers 2.1 W maximum power dissipation compared to 1 W for the original part, providing additional thermal headroom in applications operating near power limits.

Frequently Asked Questions (FAQ)

Q: Can the PHD13003C,412 be used as a direct replacement for the MJE13003B-AP?

A: Yes. Both parts are NPN transistors with identical maximum collector current (1.5 A) and collector-emitter breakdown voltage (400 V) ratings. Both use the TO-92-3 Through Hole package and are RoHS3 compliant. Direct substitution is supported without circuit modification.

Q: What are the key differences between these parts?

A: The primary differences are manufacturer (Micro Commercial Co versus WeEn Semiconductors) and product status (Obsolete versus Active). The PHD13003C,412 offers higher maximum power dissipation (2.1 W versus 1 W) and lower collector cutoff current (100 µA versus 500 µA). These differences do not affect substitution compatibility for standard applications.

Q: Are there any package considerations when substituting?

A: No. Both the MJE13003B-AP and PHD13003C,412 use the TO-92-3 Through Hole package with identical lead configuration and spacing. No PCB modifications are required.

Q: What compliance certifications apply to the substitute part?

A: The PHD13003C,412 is ROHS3 compliant with Moisture Sensitivity Level 1 (Unlimited), matching the compliance profile of the original MJE13003B-AP.

Q: Why is the PHD13003C,412 classified as Active while the original is Obsolete?

A: Product status reflects manufacturer support and supply availability. The Active status of the PHD13003C,412 indicates ongoing production and distribution, ensuring reliable sourcing for current and future applications.

Q: Are there any DC current gain (hFE) considerations for substitution?

A: DC current gain specifications differ between the parts (20 @ 400mA, 10V for MJE13003B-AP versus 5 @ 1A, 2V for PHD13003C,412). These measurements are taken at different operating points and do not prevent functional substitution. Circuit designs should be evaluated based on actual application requirements.