MJD50T4 Equivalent & Substitute Parts

Part Overview

The MJD50T4 is an NPN bipolar junction transistor manufactured by STMicroelectronics, rated for 400 V collector-emitter breakdown voltage and 1 A maximum collector current. This component is packaged in a TO-252-3 DPAK surface mount configuration and is classified as obsolete. Due to its obsolete product status, equivalent substitute parts from active manufacturers are necessary to maintain design continuity and ensure long-term component availability for new production and field replacements.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Voltage - Collector Emitter Breakdown (Max)	400	V
Current - Collector (Ic) (Max)	1	A
Vce Saturation (Max) @ Ib, Ic	1 V @ 200 mA, 1 A	—
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 300 mA, 10 V	—
Frequency - Transition	10	MHz
Package / Case	TO-252-3, DPAK (2 Leads + Tab), SC-63	—
Mounting Type	Surface Mount	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitute parts for the MJD50T4 are qualified based on the following electrical and mechanical parameters:

Critical Matching Parameters:

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector (Ic) (Max): 1 A
Vce Saturation (Max) @ Ib, Ic: 1 V @ 200 mA, 1 A
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300 mA, 10 V
Frequency - Transition: 10 MHz
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting Type: Surface Mount

All substitute parts listed maintain electrical equivalence across these parameters. Variations in maximum power dissipation rating, operating temperature range, and packaging format (Cut Tape, Tube, Tape & Reel) do not affect functional substitution within the specified electrical operating envelope.

Parameter Comparison

Parameter	MJD50T4 (STMicroelectronics)	MJD50T4G (onsemi)	MJD50G (onsemi)	MJD50TF (onsemi)	NJVMJD50T4G (onsemi)
Transistor Type	NPN	NPN	NPN	NPN	NPN
Voltage - Collector Emitter Breakdown (Max)	400 V	400 V	400 V	400 V	400 V
Current - Collector (Ic) (Max)	1 A	1 A	1 A	1 A	1 A
Vce Saturation (Max) @ Ib, Ic	1 V @ 200 mA, 1 A	1 V @ 200 mA, 1 A	1 V @ 200 mA, 1 A	1 V @ 200 mA, 1 A	1 V @ 200 mA, 1 A
Current - Collector Cutoff (Max)	100 µA	200 µA	200 µA	200 µA	200 µA
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 300 mA, 10 V	30 @ 300 mA, 10 V	30 @ 300 mA, 10 V	30 @ 300 mA, 10 V	30 @ 300 mA, 10 V
Frequency - Transition	10 MHz	10 MHz	10 MHz	10 MHz	10 MHz
Package / Case	TO-252-3, DPAK	TO-252-3, DPAK	TO-252-3, DPAK	TO-252-3, DPAK	TO-252-3, DPAK
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Product Status	Obsolete	Active	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Primary Substitute Recommendation: MJD50T4G (onsemi)

The MJD50T4G is the direct functional equivalent of the MJD50T4. This part maintains all critical electrical parameters and is available in Cut Tape & Digi-Reel packaging, matching the original packaging format. The MJD50T4G carries active product status from onsemi, ensuring long-term availability and supply chain continuity. Both parts are ROHS3 compliant and carry identical electrical specifications across all critical operating parameters.

Secondary Substitute Options:

The MJD50G (onsemi, Tube packaging) and MJD50TF (onsemi, Tape & Reel packaging) provide electrical equivalence with identical core specifications. These parts differ only in packaging format and are suitable for applications where packaging configuration flexibility is acceptable.

The NJVMJD50T4G (onsemi, Tape & Reel packaging) represents an alternative part number variant from onsemi with equivalent electrical performance and active product status.

Compliance Considerations:

All substitute parts maintain ROHS3 compliance and carry identical REACH and ECCN classifications as the original MJD50T4. Moisture sensitivity level remains at MSL 1 (Unlimited) across all substitutes, indicating no special moisture handling requirements during storage or assembly.

Frequently Asked Questions (FAQ)

Q: Can MJD50T4G be used as a direct replacement for MJD50T4?

A: Yes. The MJD50T4G maintains electrical equivalence across all critical parameters including voltage rating, current rating, saturation voltage, current gain, and transition frequency. Both components use identical TO-252-3 DPAK packaging. The primary difference is manufacturer (onsemi versus STMicroelectronics) and product status (active versus obsolete).

Q: What is the difference between MJD50T4G, MJD50G, and MJD50TF?

A: These three parts are electrically identical and differ only in packaging format. MJD50T4G is supplied in Cut Tape & Digi-Reel format, MJD50G in Tube format, and MJD50TF in Tape & Reel format. Selection depends on assembly process requirements and order quantity.

Q: Why does the MJD50T4 show a maximum power rating of 15 W while substitute parts show 1.56 W?

A: The power rating difference reflects manufacturer specification methodology and thermal management assumptions. Both ratings are valid within their respective datasheets. The electrical operating parameters (voltage, current, saturation voltage) that determine actual power dissipation in circuit operation remain identical across all parts.

Q: Are there any temperature range differences between substitutes?

A: The MJD50T4 and MJD50TF specify maximum junction temperature of 150°C. The MJD50T4G and NJVMJD50T4G specify an operating temperature range of -65°C to 150°C. For applications operating within 0°C to 150°C, all parts are functionally equivalent. Applications requiring operation below 0°C should use MJD50T4G or NJVMJD50T4G.

Q: Is the NJVMJD50T4G a qualified substitute?

A: Yes. The NJVMJD50T4G maintains all critical electrical parameters and is available in active product status. The "NJV" prefix indicates a specific onsemi product line variant. Electrical performance is equivalent to other listed substitutes.

Q: What is the collector cutoff current difference between MJD50T4 and substitute parts?

A: The MJD50T4 specifies maximum collector cutoff current of 100 µA, while substitute parts specify 200 µA. This parameter represents leakage current in the off state. The higher specification in substitute parts remains within acceptable limits for typical circuit applications and does not affect functional substitution.

Q: Can these parts be used interchangeably in existing PCB designs?

A: Yes. All substitute parts use identical TO-252-3 DPAK packaging with the same pin configuration and footprint. No PCB layout modifications are required for substitution.

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