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MJD47TF Equivalent & Substitute Parts
Part Overview
The MJD47TF is an NPN bipolar junction transistor manufactured by onsemi, rated for 250 V collector-emitter breakdown voltage and 1 A maximum collector current. The device is housed in a TO-252-3 DPAK surface mount package and is designed for general-purpose switching and amplification applications. The MJD47TF carries an obsolete product status, making identification of equivalent and substitute parts essential for design continuity and procurement planning. Active alternatives with identical or superior electrical characteristics are available from onsemi and STMicroelectronics.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | NPN | — |
| Voltage - Collector Emitter Breakdown (Max) | 250 | V |
| Current - Collector (Ic) (Max) | 1 | A |
| Vce Saturation (Max) @ Ib, Ic | 1 V @ 200 mA, 1 A | — |
| Current - Collector Cutoff (Max) | 200 | µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 300 mA, 10 V | — |
| Power - Max | 1.56 | W |
| Frequency - Transition | 10 | MHz |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 | — |
| Mounting Type | Surface Mount | — |
| Operating Temperature (Max) | 150 | °C (TJ) |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | — |
Substitute Part Grouping Explanation
Substitution of the MJD47TF is determined by strict equivalence across the following critical parameters:
- Transistor Type: NPN configuration
- Voltage Rating: 250 V collector-emitter breakdown voltage
- Current Rating: 1 A maximum collector current
- Saturation Voltage: 1 V @ 200 mA, 1 A
- DC Current Gain: 30 (minimum) @ 300 mA, 10 V
- Transition Frequency: 10 MHz
- Package: TO-252-3 DPAK surface mount
- Collector Cutoff Current: 200 µA maximum
All substitute parts listed maintain these electrical specifications and package compatibility. Differences in product status (active versus obsolete), packaging format (tube, tape & reel, cut tape), and maximum power dissipation rating are noted but do not affect functional interchangeability within the specified electrical operating envelope.
Parameter Comparison
| Parameter | MJD47TF | MJD47G | MJD47T4G | NJVMJD47T4G | MJD47T4 (STM) |
|---|---|---|---|---|---|
| Manufacturer | onsemi | onsemi | onsemi | onsemi | STMicroelectronics |
| Product Status | Obsolete | Active | Active | Active | Active |
| Transistor Type | NPN | NPN | NPN | NPN | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 250 V | 250 V | 250 V | 250 V | 250 V |
| Current - Collector (Ic) (Max) | 1 A | 1 A | 1 A | 1 A | 1 A |
| Vce Saturation (Max) @ Ib, Ic | 1 V @ 200 mA, 1 A | 1 V @ 200 mA, 1 A | 1 V @ 200 mA, 1 A | 1 V @ 200 mA, 1 A | 1 V @ 200 mA, 1 A |
| Current - Collector Cutoff (Max) | 200 µA | 200 µA | 200 µA | 200 µA | 100 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 300 mA, 10 V | 30 @ 300 mA, 10 V | 30 @ 300 mA, 10 V | 30 @ 300 mA, 10 V | 30 @ 300 mA, 10 V |
| Power - Max | 1.56 W | 1.56 W | 1.56 W | 1.56 W | 15 W |
| Frequency - Transition | 10 MHz | 10 MHz | 10 MHz | 10 MHz | 10 MHz |
| Operating Temperature (Max) | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
| Package / Case | TO-252-3 DPAK | TO-252-3 DPAK | TO-252-3 DPAK | TO-252-3 DPAK | TO-252-3 DPAK |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| RoHS Status | Not specified | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) |
| REACH Status | REACH Unaffected | REACH Unaffected | REACH Unaffected | REACH Unaffected | REACH Unaffected |
Engineering Selection Recommendations
MJD47G (onsemi): This part is a direct functional equivalent with active product status and ROHS3 compliance. It is supplied in tube packaging and maintains all electrical specifications of the MJD47TF. Selection of MJD47G is appropriate for applications requiring immediate availability and compliance with current environmental regulations.
MJD47T4G (onsemi): This part is a direct functional equivalent with active product status and ROHS3 compliance. It is supplied in tape & reel format, suitable for high-volume automated assembly operations. Electrical specifications are identical to the MJD47TF. The tape & reel packaging format provides cost efficiency for production environments.
NJVMJD47T4G (onsemi): This part is a parametric equivalent with active product status and ROHS3 compliance. It is supplied in tape & reel format and maintains all electrical specifications of the MJD47TF. The NJVMJD47 base product number indicates a qualified military-grade variant. Selection is appropriate for applications requiring enhanced reliability documentation or military-specification compliance.
MJD47T4 (STMicroelectronics): This part is a functional equivalent from an alternative manufacturer with active product status and ROHS3 compliance. It is supplied in cut tape and digi-reel format. The maximum power dissipation rating is 15 W compared to 1.56 W for the MJD47TF, and the collector cutoff current is 100 µA compared to 200 µA. These differences represent improved performance characteristics. Selection is appropriate when cross-manufacturer sourcing is required or when enhanced thermal performance is beneficial.
All substitute parts share identical voltage, current, gain, and frequency specifications with the MJD47TF and are pin-compatible within the TO-252-3 DPAK package. Selection among substitutes should be based on packaging format requirements, supply chain availability, and compliance certifications applicable to the end application.
Frequently Asked Questions (FAQ)
Q: Can MJD47G be used as a direct replacement for MJD47TF?
A: Yes. MJD47G is a direct functional equivalent. Both parts share identical electrical specifications including 250 V breakdown voltage, 1 A collector current, 1 V saturation voltage, 30 minimum DC current gain, and 10 MHz transition frequency. Both are housed in TO-252-3 DPAK packages. The primary difference is that MJD47G carries active product status and ROHS3 compliance, whereas MJD47TF is obsolete.
Q: What is the difference between MJD47T4G and MJD47G?
A: Both parts are manufactured by onsemi and share identical electrical specifications. The difference is packaging format: MJD47G is supplied in tube packaging, while MJD47T4G is supplied in tape & reel format. Tape & reel packaging is optimized for automated assembly lines, while tube packaging is suitable for manual assembly or lower-volume applications.
Q: Why does the STMicroelectronics MJD47T4 have a higher power rating (15 W versus 1.56 W)?
A: The MJD47T4 from STMicroelectronics maintains all electrical specifications required for substitution but offers enhanced thermal performance characteristics. The higher power dissipation rating reflects improved thermal design or die characteristics. This does not affect functional interchangeability; the part operates within the same voltage, current, and frequency envelope as the MJD47TF.
Q: Is NJVMJD47T4G suitable for military or aerospace applications?
A: NJVMJD47T4G carries the NJVMJD47 base product number, which indicates a qualified military-grade variant. This part is appropriate for applications requiring military-specification compliance or enhanced reliability documentation. All electrical specifications remain identical to the MJD47TF.
Q: Are all substitute parts ROHS3 compliant?
A: MJD47G, MJD47T4G, NJVMJD47T4G, and MJD47T4 (STMicroelectronics) are all ROHS3 compliant. The original MJD47TF does not specify RoHS status. For applications requiring RoHS compliance, any of the active substitute parts are suitable.
Q: Can I mix packaging formats in the same production run?
A: All substitute parts are functionally identical and pin-compatible. However, mixing packaging formats (tube, tape & reel, cut tape) may require different handling procedures and equipment. Procurement and assembly planning should specify a single packaging format per production batch to maintain process consistency.
Q: What is the collector cutoff current difference between MJD47T4 (STM) and other substitutes?
A: MJD47T4 from STMicroelectronics specifies a maximum collector cutoff current of 100 µA, compared to 200 µA for MJD47TF, MJD47G, MJD47T4G, and NJVMJD47T4G. Lower cutoff current represents improved leakage characteristics and is not a limitation for substitution; it indicates superior performance in this parameter.
Q: Are all parts available in the same quantities?
A: Inventory levels vary by part number and supplier. MJD47T4G (onsemi) has 18,668 units in stock, NJVMJD47T4G has 35,200 units, MJD47G has 2,208 units, and MJD47T4 (STMicroelectronics) has 4,430 units. Procurement decisions should account for current inventory availability and lead time requirements.
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