MJD41CT4 Equivalent & Substitute Parts

Part Overview

The MJD41CT4 is an NPN bipolar junction transistor manufactured by onsemi, designed for power switching applications. It features a maximum collector current of 6 A, collector-emitter breakdown voltage of 100 V, and a maximum power dissipation of 20 W in a surface mount DPAK package. The device is classified as obsolete, which necessitates identification of functionally equivalent alternatives for new designs and ongoing production requirements.

Substiute Parts

MJD41CT4
onsemiIn Stock: 1570MJD41CT4 Datasheet
MJD41CT4
Current Part
MJD41CT4G
onsemiIn Stock: 42973MJD41CT4G Datasheet
MJD41CT4G
Direct

Key Parameters

Parameter Value Unit
Transistor Type NPN
Current - Collector (Ic) Max 6 A
Voltage - Collector Emitter Breakdown (Max) 100 V
Vce Saturation (Max) 1.5 V @ 600mA, 6A
Current - Collector Cutoff (Max) 50 µA
DC Current Gain (hFE) Min 15 @ 3A, 4V
Power - Max 20 W
Frequency - Transition 3 MHz
Operating Temperature Range -65 to 150 °C (TJ)
Mounting Type Surface Mount
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63

Substitute Part Grouping Explanation

Substitution of the MJD41CT4 is determined by electrical and mechanical parameter equivalence. The critical parameters that define substitutability are:

  • Transistor Type: NPN configuration
  • Current Rating: Maximum collector current of 6 A
  • Voltage Rating: Collector-emitter breakdown voltage of 100 V
  • Saturation Characteristics: Vce saturation of 1.5 V at specified base and collector currents
  • Current Gain: DC current gain (hFE) minimum of 15 at 3 A, 4 V
  • Transition Frequency: 3 MHz
  • Package: TO-252-3 DPAK surface mount configuration
  • Operating Temperature: -65°C to 150°C junction temperature range

The MJD41CT4G is identified as a direct substitute. Both devices share identical electrical specifications across all critical parameters and are housed in the same DPAK package. The primary distinction is product status and compliance certification.

Parameter Comparison

Parameter MJD41CT4 MJD41CT4G Match
Transistor Type NPN NPN
Current - Collector (Ic) Max 6 A 6 A
Voltage - Collector Emitter Breakdown (Max) 100 V 100 V
Vce Saturation (Max) 1.5 V @ 600mA, 6A 1.5 V @ 600mA, 6A
Current - Collector Cutoff (Max) 50 µA 50 µA
DC Current Gain (hFE) Min 15 @ 3A, 4V 15 @ 3A, 4V
Frequency - Transition 3 MHz 3 MHz
Operating Temperature Range -65 to 150 °C (TJ) -65 to 150 °C (TJ)
Package / Case TO-252-3, DPAK TO-252-3, DPAK
Power - Max 20 W 1.75 W Partial
Product Status Obsolete Active
RoHS Status Non-compliant ROHS3 Compliant

Engineering Selection Recommendations

The MJD41CT4G is the direct electrical equivalent of the MJD41CT4 across all specified electrical parameters. Both devices are rated for 6 A collector current, 100 V breakdown voltage, and identical saturation characteristics. The devices are pin-compatible within the TO-252-3 DPAK package.

Product Status Consideration: The MJD41CT4 is classified as obsolete, while the MJD41CT4G maintains active product status. For new designs and ongoing production, the MJD41CT4G is the appropriate selection.

Compliance Consideration: The MJD41CT4G is ROHS3 compliant, whereas the MJD41CT4 is non-compliant. Applications subject to RoHS requirements must use the MJD41CT4G.

Power Dissipation Note: The MJD41CT4G is specified with a maximum power dissipation of 1.75 W, compared to 20 W for the MJD41CT4. Circuit designs must verify that thermal requirements do not exceed the 1.75 W rating of the substitute device.

Frequently Asked Questions (FAQ)

Q: Are the MJD41CT4 and MJD41CT4G electrically interchangeable?

A: Yes. Both devices share identical electrical specifications for collector current (6 A), breakdown voltage (100 V), saturation voltage (1.5 V), current gain (15 minimum), and transition frequency (3 MHz). They are housed in the same TO-252-3 DPAK package with identical pinout.

Q: What is the primary reason to substitute the MJD41CT4?

A: The MJD41CT4 is classified as obsolete. The MJD41CT4G is the active equivalent and is recommended for all new designs and production applications.

Q: Does the MJD41CT4G meet RoHS requirements?

A: Yes. The MJD41CT4G is ROHS3 compliant. The original MJD41CT4 is non-compliant. Applications requiring RoHS certification must use the MJD41CT4G.

Q: Is there a difference in power dissipation between these devices?

A: Yes. The MJD41CT4 is rated for 20 W maximum power dissipation, while the MJD41CT4G is rated for 1.75 W. Circuit designs must ensure thermal requirements do not exceed 1.75 W when using the MJD41CT4G.

Q: Are the packaging options different?

A: Both devices use the TO-252-3 DPAK surface mount package. The MJD41CT4 is supplied in standard packaging, while the MJD41CT4G is supplied in Tape & Reel format. Both are compatible with automated assembly processes.

Q: What is the operating temperature range for both devices?

A: Both the MJD41CT4 and MJD41CT4G operate across a junction temperature range of -65°C to 150°C.

Q: Can the MJD41CT4G be used as a direct replacement in existing designs?

A: Yes, provided that circuit thermal requirements do not exceed 1.75 W. The electrical characteristics and package are identical, enabling direct substitution in PCB layouts and circuit designs.

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