MJD32C-TP Equivalent & Substitute Parts

Part Overview

The MJD32C-TP is a PNP bipolar junction transistor manufactured by Micro Commercial Co, rated for 100 V collector-emitter breakdown voltage and 3 A maximum collector current. This surface mount device in DPAK packaging is designed for general-purpose switching and amplification applications. The part is currently active in production with RoHS3 compliance and unlimited moisture sensitivity rating. Equivalent and substitute parts are identified based on matching electrical performance parameters and compatible packaging specifications to support design flexibility and supply chain continuity.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP	—
Voltage - Collector Emitter Breakdown (Max)	100	V
Current - Collector (Ic) (Max)	3	A
Vce Saturation (Max) @ Ib, Ic	1.2V @ 375mA, 3A	—
DC Current Gain (hFE) (Min) @ Ic, Vce	10 @ 3A, 4V	—
Power - Max	1.25	W
Frequency - Transition	3	MHz
Operating Temperature (Max)	150	°C (TJ)
Package / Case	TO-252-3, DPAK (2 Leads + Tab), SC-63	—
Mounting Type	Surface Mount	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitute parts for the MJD32C-TP are classified into two categories based on electrical and mechanical compatibility:

Direct Substitutes share identical or superior electrical specifications and are packaged in the same TO-252-3 DPAK form factor. These parts maintain the following critical parameters:

Transistor Type: PNP
Voltage - Collector Emitter Breakdown: 100 V (minimum)
Current - Collector (Ic) (Max): 3 A (minimum)
Vce Saturation: 1.2V @ 375mA, 3A
DC Current Gain (hFE): 10 @ 3A, 4V (minimum)
Package / Case: TO-252-3 DPAK
Mounting Type: Surface Mount
RoHS Status: ROHS3 Compliant

Similar Parts meet the core electrical requirements but may differ in secondary parameters such as power dissipation, transition frequency, operating temperature range, or packaging format. These parts are suitable for applications where the primary electrical specifications are the limiting factors.

Parameter Comparison

Part Number	Manufacturer	Transistor Type	Ic (Max) [A]	Vce Breakdown (Max) [V]	Vce Sat @ Ib, Ic	hFE (Min) @ Ic, Vce	Power (Max) [W]	Frequency [MHz]	Temp Range [°C]	Package	Status
MJD32C-TP	Micro Commercial Co	PNP	3	100	1.2V @ 375mA, 3A	10 @ 3A, 4V	1.25	3	–55 to 150	TO-252-3 DPAK	Active
MJD32C-13	Diodes Incorporated	PNP	3	100	1.2V @ 375mA, 3A	10 @ 3A, 4V	15	3	–55 to 150	TO-252-3 DPAK	Active
MJD32CQ-13	Diodes Incorporated	PNP	3	100	1.2V @ 375mA, 3A	10 @ 3A, 4V	15	3	–55 to 150	TO-252-3 DPAK	Active
MJD32CT4-A	STMicroelectronics	PNP	3	100	1.2V @ 375mA, 3A	10 @ 3A, 4V	15	—	–55 to 150	TO-252-3 DPAK	Active
NJVMJD32CG	onsemi	PNP	3	100	1.2V @ 375mA, 3A	10 @ 3A, 4V	1.56	3	–65 to 150	TO-252-3 DPAK	Active
MJD32CG	onsemi	PNP	3	100	1.2V @ 375mA, 3A	10 @ 3A, 4V	1.56	3	–65 to 150	TO-252-3 DPAK	Active
MJD32CRLG	onsemi	PNP	3	100	1.2V @ 375mA, 3A	10 @ 3A, 4V	1.56	3	–65 to 150	TO-252-3 DPAK	Active
2SA1593S-TL-E	onsemi	PNP	2	100	600mV @ 100mA, 1A	140 @ 100mA, 5V	1	120	–55 to 150	TP-FA	Active
2SB1215S-TL-E	onsemi	PNP	3	100	500mV @ 150mA, 1.5A	140 @ 500mA, 5V	1	130	–55 to 150	TP-FA	Active

Engineering Selection Recommendations

Direct Substitutes (Recommended for Pin-Compatible Replacement)

The following parts are functionally equivalent to the MJD32C-TP and are suitable for direct substitution in applications requiring PNP transistors with 100 V breakdown voltage and 3 A collector current in TO-252-3 DPAK packaging:

MJD32C-13 (Diodes Incorporated): Identical electrical specifications with enhanced power dissipation (15 W vs. 1.25 W). Extended operating temperature range (–55°C to 150°C). Active product status with ROHS3 compliance.
MJD32CQ-13 (Diodes Incorporated): Identical electrical specifications with enhanced power dissipation (15 W). Extended operating temperature range. Highest inventory availability (30,400 pcs). Active product status with ROHS3 compliance.
MJD32CT4-A (STMicroelectronics): Identical electrical specifications with enhanced power dissipation (15 W). Packaged in Cut Tape format. Active product status with ROHS3 compliance.
NJVMJD32CG (onsemi): Identical electrical specifications with extended operating temperature range (–65°C to 150°C). Packaged in Tube format. Active product status with ROHS3 compliance.
MJD32CG (onsemi): Identical electrical specifications with extended operating temperature range (–65°C to 150°C). Packaged in Tube format. Active product status with ROHS3 compliance.
MJD32CRLG (onsemi): Identical electrical specifications with extended operating temperature range (–65°C to 150°C). Packaged in Cut Tape & Digi-Reel format. Active product status with ROHS3 compliance.

Similar Parts (Application-Dependent Substitution)

The following parts meet core electrical requirements but differ in secondary specifications:

2SA1593S-TL-E (onsemi): Reduced maximum collector current (2 A vs. 3 A). Enhanced transition frequency (120 MHz vs. 3 MHz). Different package format (TP-FA). Suitable for lower-current applications requiring higher switching speed.
2SB1215S-TL-E (onsemi): Maintains 3 A collector current with enhanced transition frequency (130 MHz vs. 3 MHz). Different package format (TP-FA). Suitable for applications requiring higher switching speed with equivalent current handling.

All substitute parts listed maintain ROHS3 compliance and unlimited moisture sensitivity rating (MSL 1), ensuring compatibility with standard manufacturing processes.

Frequently Asked Questions (FAQ)

Q: Can MJD32C-13 be used as a direct replacement for MJD32C-TP?

A: Yes. Both parts are PNP transistors with identical electrical specifications: 100 V breakdown voltage, 3 A maximum collector current, 1.2 V saturation voltage at rated conditions, and 10 minimum hFE at 3 A. Both use TO-252-3 DPAK packaging. MJD32C-13 offers higher power dissipation (15 W vs. 1.25 W) and extended temperature range (–55°C to 150°C), making it suitable for applications with higher thermal demands.

Q: What is the difference between MJD32CQ-13 and MJD32C-13?

A: Both parts share identical electrical specifications and packaging. The primary difference is inventory availability and supplier designation. MJD32CQ-13 has significantly higher stock levels (30,400 pcs vs. 2,750 pcs), making it preferable for high-volume production requirements.

Q: Are onsemi MJD32CG and NJVMJD32CG interchangeable?

A: Yes. Both parts are manufactured by onsemi with identical electrical specifications and TO-252-3 DPAK packaging. The primary difference is packaging format: MJD32CG is supplied in Tube format, while NJVMJD32CG is supplied in Tube format as well. Both support extended operating temperature range (–65°C to 150°C).

Q: Can 2SA1593S-TL-E replace MJD32C-TP in all applications?

A: No. While 2SA1593S-TL-E maintains the 100 V breakdown voltage and PNP configuration, it has a reduced maximum collector current (2 A vs. 3 A). This part is suitable only for applications where collector current does not exceed 2 A. Additionally, it uses a different package format (TP-FA vs. DPAK), requiring PCB layout modifications.

Q: What is the significance of the extended temperature range in onsemi variants?

A: onsemi parts (MJD32CG, NJVMJD32CG, MJD32CRLG) support operating temperatures from –65°C to 150°C, compared to the standard –55°C to 150°C range of other variants. This extended lower temperature limit is beneficial for applications in extreme cold environments or where thermal cycling stress is a design consideration.

Q: Are there packaging format differences between substitute parts?

A: Yes. Most direct substitutes use TO-252-3 DPAK packaging. However, packaging format varies by supplier: Diodes Incorporated and STMicroelectronics supply in Tape & Reel or Cut Tape formats, while onsemi supplies in Tube or Cut Tape & Digi-Reel formats. All maintain the same physical TO-252-3 DPAK footprint for PCB compatibility.

Q: Do all substitute parts meet RoHS3 compliance?

A: Yes. All substitute parts listed are ROHS3 compliant with unlimited moisture sensitivity rating (MSL 1), ensuring compatibility with standard lead-free soldering processes and storage conditions without special handling requirements.

Q: What is the practical difference in power dissipation between 1.25 W and 15 W ratings?

A: The power rating indicates maximum continuous dissipation capability. Parts rated at 15 W (MJD32C-13, MJD32CQ-13, MJD32CT4-A) can handle higher continuous power dissipation without thermal derating, making them suitable for applications with sustained high current or switching losses. The 1.25 W rating of MJD32C-TP and onsemi variants is adequate for lower-power switching applications but may require thermal management in high-duty-cycle scenarios.

Q: Is transition frequency critical for substitution?

A: Transition frequency (fT) determines switching speed capability. The MJD32C-TP operates at 3 MHz, suitable for low-frequency switching applications. Parts like 2SA1593S-TL-E (120 MHz) and 2SB1215S-TL-E (130 MHz) are designed for higher-frequency applications. Substitution with higher-frequency parts is generally acceptable for low-frequency designs, but lower-frequency parts should not replace higher-frequency requirements.

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