MJD32CTM Equivalent & Substitute Parts

Part Overview

The MJD32CTM is a PNP bipolar junction transistor manufactured by onsemi, rated for 100 V collector-emitter breakdown voltage and 3 A maximum collector current in a surface mount DPAK package. This device is classified as obsolete, which necessitates identification of equivalent and substitute components for ongoing design support and production continuity. The MJD32CTM serves in applications requiring moderate-frequency PNP switching and amplification with moderate power dissipation in compact surface mount form factors.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP	—
Collector Current (Max)	3	A
Collector-Emitter Breakdown Voltage (Max)	100	V
Vce Saturation (Max)	1.2	V @ 375mA, 3A
Collector Cutoff Current (Max)	50	µA
DC Current Gain (hFE Min)	10	@ 3A, 4V
Power Dissipation (Max)	1.56	W
Transition Frequency	3	MHz
Operating Temperature (Max)	150	°C (TJ)
Package Type	TO-252-3, DPAK	—
Mounting Type	Surface Mount	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the MJD32CTM is determined by strict equivalence across the following critical parameters:

Direct Substitutes maintain identical electrical specifications:

Transistor type: PNP
Collector current rating: 3 A
Collector-emitter breakdown voltage: 100 V
Vce saturation: 1.2 V @ 375mA, 3A
DC current gain (hFE): 10 @ 3A, 4V
Power dissipation: 1.56 W
Transition frequency: 3 MHz
Package: TO-252-3 DPAK
Surface mount configuration

Similar Parts share the same voltage and current ratings but differ in one or more of the following: transition frequency, power dissipation, DC current gain, Vce saturation characteristics, or package variant. These parts are functionally compatible in applications where the differing parameters do not impose constraints.

Parts with Reduced Voltage Rating (40 V instead of 100 V) are listed as similar alternatives only for applications where the lower voltage rating is acceptable.

Parameter Comparison

Part Number	Manufacturer	Product Status	Ic (Max) [A]	Vce(BR) [V]	Vce Sat [V]	hFE (Min)	Power [W]	Freq [MHz]	Package	Packaging Type
MJD32CTM	onsemi	Obsolete	3	100	1.2 @ 375mA, 3A	10 @ 3A, 4V	1.56	3	TO-252-3 DPAK	—
MJD32CT4G	onsemi	Active	3	100	1.2 @ 375mA, 3A	10 @ 3A, 4V	1.56	3	TO-252-3 DPAK	Cut Tape (CT) & Digi-Reel®
NJVMJD32CG	onsemi	Active	3	100	1.2 @ 375mA, 3A	10 @ 3A, 4V	1.56	3	TO-252-3 DPAK	Tube
2SA1593S-TL-E	onsemi	Active	2	100	600mV @ 100mA, 1A	140 @ 100mA, 5V	1	120	TO-252-3 DPAK	Tape & Reel (TR)
2SA1593T-TL-E	onsemi	Obsolete	2	100	600mV @ 100mA, 1A	200 @ 100mA, 5V	1	120	TO-252-3 DPAK	Cut Tape (CT)
2SB1215S-TL-E	onsemi	Active	3	100	500mV @ 150mA, 1.5A	140 @ 500mA, 5V	1	130	TO-252-3 DPAK	Tape & Reel (TR)
2SB1216S-TL-E	onsemi	Obsolete	4	100	500mV @ 200mA, 2A	140 @ 500mA, 5V	1	130	TO-252-3 DPAK	Tape & Reel (TR)
2SB1216T-TL-E	onsemi	Active	4	100	500mV @ 200mA, 2A	200 @ 500mA, 5V	1	130	TO-252-3 DPAK	—
2SD1815T-TL-E	onsemi	Obsolete	3	100	400mV @ 150mA, 1.5A	70 @ 500mA, 5V	1	180	TO-252-3 DPAK	—
MJD32RLG	onsemi	Active	3	40	1.2 @ 375mA, 3A	10 @ 3A, 4V	1.56	3	TO-252-3 DPAK	Tape & Reel (TR)
MJD32T4G	onsemi	Active	3	40	1.2 @ 375mA, 3A	10 @ 3A, 4V	1.56	3	TO-252-3 DPAK	Tape & Reel (TR)

Engineering Selection Recommendations

Direct Substitutes (Recommended for Replacement)

MJD32CT4G and NJVMJD32CG are direct electrical and mechanical equivalents to the MJD32CTM. Both parts maintain active product status with onsemi, ensuring long-term availability and supply chain stability. MJD32CT4G is supplied in Cut Tape and Digi-Reel packaging, while NJVMJD32CG is supplied in Tube packaging. Both are ROHS3 compliant and carry identical electrical specifications. Selection between these two should be based on packaging and procurement requirements.

Similar Parts with Enhanced Performance

2SB1215S-TL-E and 2SB1216T-TL-E offer higher transition frequencies (130 MHz versus 3 MHz) and improved DC current gain characteristics. These parts are suitable for applications requiring faster switching performance. 2SB1215S-TL-E maintains the 3 A current rating and active product status. 2SB1216T-TL-E provides 4 A current capability with active status, offering additional design margin for higher-current applications.

Similar Parts with Reduced Voltage Rating

MJD32RLG and MJD32T4G are rated for 40 V collector-emitter breakdown voltage instead of 100 V. These parts are suitable only for applications where the lower voltage rating is acceptable. Both maintain identical current, power, and frequency specifications as the MJD32CTM and carry active product status.

Obsolete Parts to Avoid

2SA1593T-TL-E, 2SB1216S-TL-E, and 2SD1815T-TL-E carry obsolete product status and should not be selected for new designs or long-term production commitments.

Frequently Asked Questions (FAQ)

Q: Can MJD32CT4G be used as a direct replacement for MJD32CTM?

A: Yes. MJD32CT4G is electrically and mechanically identical to MJD32CTM across all specified parameters: 3 A collector current, 100 V breakdown voltage, 1.2 V Vce saturation, 10 hFE minimum, 1.56 W power dissipation, and 3 MHz transition frequency. The primary difference is packaging format (Cut Tape & Digi-Reel versus unspecified) and active product status.

Q: What is the difference between NJVMJD32CG and MJD32CT4G?

A: Both parts are electrically identical. The difference is packaging: NJVMJD32CG is supplied in Tube format, while MJD32CT4G is supplied in Cut Tape and Digi-Reel format. Selection depends on procurement and assembly line requirements.

Q: Can 2SB1215S-TL-E replace MJD32CTM in all applications?

A: 2SB1215S-TL-E shares the same 100 V voltage rating and 3 A current rating as MJD32CTM. However, it differs in transition frequency (130 MHz versus 3 MHz), Vce saturation (500 mV versus 1.2 V), and DC current gain (140 versus 10). It is suitable for applications where faster switching and higher gain are beneficial or neutral. Applications sensitive to saturation voltage or requiring specific gain characteristics require evaluation.

Q: Why are MJD32RLG and MJD32T4G listed as similar rather than direct substitutes?

A: These parts have a reduced collector-emitter breakdown voltage rating of 40 V instead of 100 V. While they maintain identical current, power, and frequency specifications, the lower voltage rating restricts their use to applications where 40 V is sufficient. They cannot be used in circuits designed for 100 V operation.

Q: What is the significance of product status (Active versus Obsolete)?

A: Active products are in current production and carry long-term availability guarantees. Obsolete products are no longer manufactured and have limited remaining inventory. For new designs and production commitments, active products should be selected to ensure supply chain continuity.

Q: Are all listed parts ROHS3 compliant?

A: Yes. All parts listed in this reference are ROHS3 compliant and carry MSL Level 1 (Unlimited) moisture sensitivity rating, indicating compatibility with standard manufacturing and storage practices.

Q: Can NPN transistors substitute for the PNP MJD32CTM?

A: No. The MJD32CTM is a PNP transistor. NPN transistors (such as 2SD1815T-TL-E) have opposite polarity and cannot be used as direct substitutes without circuit redesign. NPN parts are listed for reference only and require complete circuit topology changes.

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