MJD32CT4 Equivalent & Substitute Parts

Part Overview

The MJD32CT4 is a PNP bipolar junction transistor manufactured by STMicroelectronics, rated for 100 V collector-emitter breakdown voltage and 3 A maximum collector current. The device is housed in a Surface Mount DPAK package (TO-252-3) and is designed for general-purpose switching and amplification applications requiring moderate power dissipation up to 15 W. The part is Active in product status and RoHS3 compliant. Equivalent and substitute parts are identified based on matching electrical characteristics, package compatibility, and manufacturing specifications to ensure functional interchangeability in circuit designs.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP	—
Collector Current (Ic) Max	3	A
Collector-Emitter Breakdown Voltage (Max)	100	V
Vce Saturation (Max)	1.2	V @ 375mA, 3A
DC Current Gain (hFE) Min	10	@ 3A, 4V
Power Dissipation (Max)	15	W
Operating Temperature (TJ)	150	°C
Package Type	TO-252-3 DPAK	—
Mounting Type	Surface Mount	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitute parts for the MJD32CT4 are classified into two categories based on electrical parameter alignment:

Direct Substitutes (Functionally Equivalent): Parts that match all critical electrical parameters including collector current (3 A), collector-emitter breakdown voltage (100 V), Vce saturation (1.2 V @ 375mA, 3A), DC current gain (10 @ 3A, 4V), and package type (TO-252-3 DPAK). These parts maintain identical switching and amplification characteristics and are interchangeable in circuit applications.

Similar Substitutes (Parameter Variations): Parts that share the same transistor type (PNP), voltage rating (100 V), and collector current (3 A) but differ in one or more secondary parameters such as power dissipation, frequency response, operating temperature range, or package configuration. These parts are suitable for applications where the specific parameter variation does not impact circuit performance.

Key Parameters for Substitution Determination:

Transistor Type (PNP)
Collector Current Rating (3 A)
Collector-Emitter Breakdown Voltage (100 V)
Vce Saturation Characteristics (1.2 V @ 375mA, 3A)
DC Current Gain (10 @ 3A, 4V)
Package Type (TO-252-3 DPAK)
Surface Mount Compatibility

Parameter Comparison

Part Number	Manufacturer	Ic (Max) A	Vce(br) V	Vce Sat V	hFE Min	Power W	Freq MHz	Temp °C	Package	Status
MJD32CT4	STMicroelectronics	3	100	1.2	10	15	—	150	TO-252-3 DPAK	Active
MJD32CT4-A	STMicroelectronics	3	100	1.2	10	15	—	150	TO-252-3 DPAK	Active
MJD32C-13	Diodes Incorporated	3	100	1.2	10	15	3	-55 to 150	TO-252-3 DPAK	Active
MJD32C-TP	Micro Commercial Co	3	100	1.2	10	1.25	3	150	TO-252-3 DPAK	Active
MJD32CQ-13	Diodes Incorporated	3	100	1.2	10	15	3	-55 to 150	TO-252-3 DPAK	Active
NJVMJD32CG	onsemi	3	100	1.2	10	1.56	3	-65 to 150	TO-252-3 DPAK	Active
2SA1593S-TL-E	onsemi	2	100	0.6	140	1	120	150	TP-FA	Active
2SB1215S-TL-E	onsemi	3	100	0.5	140	1	130	150	TP-FA	Active
MJD32RLG	onsemi	3	40	1.2	10	1.56	3	-65 to 150	TO-252-3 DPAK	Active
MJD32T4G	onsemi	3	40	1.2	10	1.56	3	-65 to 150	TO-252-3 DPAK	Active

Engineering Selection Recommendations

Direct Substitutes (Recommended for Pin-Compatible Replacement):

MJD32CT4-A, MJD32C-13, and MJD32CQ-13 are direct functional equivalents to the MJD32CT4. All three parts maintain identical electrical specifications for collector current (3 A), collector-emitter breakdown voltage (100 V), Vce saturation (1.2 V), and DC current gain (10 @ 3A, 4V). MJD32C-13 and MJD32CQ-13 offer extended operating temperature range (-55°C to 150°C) compared to the base specification (150°C maximum). All direct substitutes are RoHS3 compliant and Active in product status.

Functionally Compatible Substitutes (Electrical Equivalence with Parameter Variations):

NJVMJD32CG (onsemi) provides electrical equivalence with identical current and voltage ratings but reduced power dissipation (1.56 W versus 15 W) and extended temperature range (-65°C to 150°C). This part is suitable for applications where the lower power rating does not constrain circuit operation.

MJD32C-TP (Micro Commercial Co) matches all critical electrical parameters but specifies lower power dissipation (1.25 W). This part is appropriate for low-power switching applications within the 3 A collector current envelope.

Limited Compatibility Substitutes (Voltage or Current Derating Required):

MJD32RLG and MJD32T4G are rated for 40 V collector-emitter breakdown voltage, representing a 60% reduction from the 100 V specification of the MJD32CT4. These parts are suitable only for applications operating at 40 V or below and should not be used as direct replacements in 100 V circuits.

2SA1593S-TL-E is rated for 2 A maximum collector current, representing a 33% reduction from the 3 A specification. This part is suitable only for applications requiring 2 A or less and should not be used in circuits demanding the full 3 A capability.

Compliance and Certification:

All recommended substitute parts maintain RoHS3 compliance and REACH unaffected status, matching the environmental and regulatory requirements of the MJD32CT4. All parts are classified under ECCN EAR99 and HTSUS 8541.29.0095, consistent with the original part classification.

Frequently Asked Questions (FAQ)

Q: Can MJD32C-13 be used as a direct replacement for MJD32CT4?

A: Yes. MJD32C-13 is a direct functional equivalent. Both parts share identical electrical specifications for collector current (3 A), collector-emitter breakdown voltage (100 V), Vce saturation (1.2 V @ 375mA, 3A), and DC current gain (10 @ 3A, 4V). Both are housed in TO-252-3 DPAK packages and are pin-compatible. MJD32C-13 offers the additional benefit of extended operating temperature range (-55°C to 150°C).

Q: What is the difference between MJD32CT4 and NJVMJD32CG?

A: Both parts are electrically equivalent in terms of collector current (3 A), collector-emitter breakdown voltage (100 V), Vce saturation (1.2 V), and DC current gain (10 @ 3A, 4V). The primary difference is power dissipation: MJD32CT4 is rated for 15 W, while NJVMJD32CG is rated for 1.56 W. NJVMJD32CG also offers extended operating temperature range (-65°C to 150°C). Selection depends on circuit power requirements.

Q: Can MJD32RLG replace MJD32CT4 in a 100 V application?

A: No. MJD32RLG is rated for 40 V collector-emitter breakdown voltage, which is insufficient for 100 V circuit operation. MJD32RLG is suitable only for applications operating at 40 V or below. Using MJD32RLG in a 100 V circuit will result in device failure.

Q: Is 2SA1593S-TL-E compatible with MJD32CT4?

A: 2SA1593S-TL-E shares the same 100 V collector-emitter breakdown voltage and PNP transistor type as MJD32CT4. However, 2SA1593S-TL-E is rated for 2 A maximum collector current, compared to 3 A for MJD32CT4. This part is suitable only for applications requiring 2 A or less. Additionally, 2SA1593S-TL-E uses a TP-FA package rather than TO-252-3 DPAK, requiring PCB layout modification.

Q: What packaging options are available for MJD32 series substitutes?

A: The majority of MJD32 series substitutes use the TO-252-3 DPAK package, which is pin-compatible with MJD32CT4. Alternative packages include TP-FA (used by 2SA1593S-TL-E and 2SB1215S-TL-E), which requires different PCB footprint design. Verify package compatibility with your circuit board layout before part selection.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed in this reference maintain RoHS3 compliance and REACH unaffected status, matching the environmental and regulatory requirements of the MJD32CT4.

Q: What is the significance of DC current gain (hFE) in substitute selection?

A: DC current gain (hFE) determines the base current required to achieve a specified collector current. MJD32CT4 specifies hFE minimum of 10 @ 3A, 4V. Direct substitutes maintain this specification. Parts such as 2SA1593S-TL-E and 2SB1215S-TL-E specify higher hFE values (140), indicating lower base current requirements. Higher hFE values do not prevent substitution but may improve circuit efficiency in base-driven applications.

Q: Can MJD32C-TP be used in high-power applications?

A: MJD32C-TP is rated for 1.25 W power dissipation, compared to 15 W for MJD32CT4. While MJD32C-TP maintains the same 3 A collector current and 100 V voltage ratings, the reduced power rating limits its use to low-power switching applications. High-power applications requiring sustained 15 W dissipation should use MJD32CT4, MJD32CT4-A, MJD32C-13, or MJD32CQ-13.

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