MJD32CRL Equivalent & Substitute Parts

Part Overview

The MJD32CRL is a PNP bipolar junction transistor manufactured by onsemi, rated for 100 V collector-emitter breakdown voltage and 3 A maximum collector current. The device is packaged in a TO-252-3 DPAK surface mount configuration with a maximum power dissipation of 1.56 W and transition frequency of 3 MHz. The MJD32CRL is classified as obsolete, necessitating identification of equivalent and substitute components for ongoing design requirements and procurement needs.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP	—
Voltage - Collector Emitter Breakdown (Max)	100	V
Current - Collector (Ic) (Max)	3	A
Vce Saturation (Max) @ Ib, Ic	1.2 V @ 375 mA, 3 A	—
Current - Collector Cutoff (Max)	50	µA
DC Current Gain (hFE) (Min) @ Ic, Vce	10 @ 3 A, 4 V	—
Power - Max	1.56	W
Frequency - Transition	3	MHz
Operating Temperature Range	−65 to 150	°C
Mounting Type	Surface Mount	—
Package / Case	TO-252-3, DPAK	—
RoHS Status	Non-compliant	—

Substitute Part Grouping Explanation

Substitution of the MJD32CRL is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

Transistor type (PNP)
Maximum collector-emitter breakdown voltage (100 V minimum)
Maximum collector current (3 A minimum)
Vce saturation characteristics (1.2 V @ 375 mA, 3 A)
DC current gain (hFE minimum 10 @ 3 A, 4 V)
Collector cutoff current (50 µA maximum)

Mechanical Compatibility Criteria:

Surface mount mounting type
TO-252-3 DPAK package configuration
Moisture sensitivity level (MSL 1 - Unlimited)

Substitute parts are grouped into two categories:

Direct Manufacturer Substitutes: Parts from onsemi and STMicroelectronics that maintain identical electrical specifications and packaging, with enhanced product status (Active) and RoHS3 compliance.

Similar Manufacturer Substitutes: Parts from Diodes Incorporated and Micro Commercial Co that meet all electrical parameters and package requirements, with variations in power dissipation ratings and operating temperature ranges.

Parameter Comparison

Part Number	Manufacturer	Product Status	Ic (Max)	Vce Breakdown	Vce Sat @ Ib, Ic	hFE (Min)	Power (Max)	Frequency	Temp Range	Package	RoHS
MJD32CRL	onsemi	Obsolete	3 A	100 V	1.2 V @ 375 mA, 3 A	10 @ 3 A, 4 V	1.56 W	3 MHz	−65 to 150 °C	TO-252-3 DPAK	Non-compliant
MJD32CRLG	onsemi	Active	3 A	100 V	1.2 V @ 375 mA, 3 A	10 @ 3 A, 4 V	1.56 W	3 MHz	−65 to 150 °C	TO-252-3 DPAK	ROHS3 Compliant
MJD32CT4G	onsemi	Active	3 A	100 V	1.2 V @ 375 mA, 3 A	10 @ 3 A, 4 V	1.56 W	3 MHz	−65 to 150 °C	TO-252-3 DPAK	ROHS3 Compliant
MJD32CT4	STMicroelectronics	Active	3 A	100 V	1.2 V @ 375 mA, 3 A	10 @ 3 A, 4 V	15 W	—	−40 to 150 °C	TO-252-3 DPAK	ROHS3 Compliant
MJD32CT4-A	STMicroelectronics	Active	3 A	100 V	1.2 V @ 375 mA, 3 A	10 @ 3 A, 4 V	15 W	—	−40 to 150 °C	TO-252-3 DPAK	ROHS3 Compliant
MJD32C-13	Diodes Incorporated	Active	3 A	100 V	1.2 V @ 375 mA, 3 A	10 @ 3 A, 4 V	15 W	3 MHz	−55 to 150 °C	TO-252-3 DPAK	ROHS3 Compliant
MJD32C-TP	Micro Commercial Co	Active	3 A	100 V	1.2 V @ 375 mA, 3 A	10 @ 3 A, 4 V	1.25 W	3 MHz	−40 to 150 °C	TO-252-3 DPAK	ROHS3 Compliant
MJD32CQ-13	Diodes Incorporated	Active	3 A	100 V	1.2 V @ 375 mA, 3 A	10 @ 3 A, 4 V	15 W	3 MHz	−55 to 150 °C	TO-252-3 DPAK	ROHS3 Compliant

Engineering Selection Recommendations

Primary Recommendation: MJD32CRLG

The MJD32CRLG is the direct onsemi equivalent to the obsolete MJD32CRL. This part maintains identical electrical specifications, power dissipation, transition frequency, and operating temperature range. The MJD32CRLG is classified as Active product status with ROHS3 compliance, providing long-term availability and regulatory alignment. This part is the preferred choice for direct replacement in existing designs.

Secondary Recommendation: MJD32CT4G

The MJD32CT4G is an onsemi alternative with identical electrical and thermal characteristics to the MJD32CRL. This part is Active status with ROHS3 compliance and offers higher inventory availability (37,200 units). Selection of this part is appropriate when design flexibility permits alternative part numbering.

Alternative Recommendations: MJD32CT4 and MJD32CT4-A

Both STMicroelectronics parts (MJD32CT4 and MJD32CT4-A) meet all electrical requirements with enhanced power dissipation capability (15 W versus 1.56 W). These parts are Active status with ROHS3 compliance. The higher power rating provides thermal margin in applications where the original 1.56 W specification may be marginal. Operating temperature range is −40 to 150 °C, which is narrower than the original −65 to 150 °C range.

Compatible Alternatives: MJD32C-13 and MJD32CQ-13

Both Diodes Incorporated parts (MJD32C-13 and MJD32CQ-13) provide full electrical compatibility with enhanced power dissipation (15 W) and transition frequency specification (3 MHz). Operating temperature range is −55 to 150 °C. These parts are Active status with ROHS3 compliance and suitable for applications where the lower temperature limit of −55 °C is acceptable.

Marginal Alternative: MJD32C-TP

The Micro Commercial Co part MJD32C-TP meets all electrical specifications with slightly reduced power dissipation (1.25 W versus 1.56 W). This part is Active status with ROHS3 compliance. Selection is appropriate only when power dissipation margin is not critical and the −40 to 150 °C operating range is acceptable.

Frequently Asked Questions (FAQ)

Q: Can MJD32CRLG be used as a direct replacement for MJD32CRL?

A: Yes. The MJD32CRLG is electrically and mechanically identical to the MJD32CRL with the exception of product status (Active versus Obsolete) and RoHS compliance (ROHS3 Compliant versus Non-compliant). All electrical parameters, power dissipation, frequency response, and operating temperature range are identical.

Q: What is the difference between MJD32CT4G and MJD32CT4?

A: MJD32CT4G is manufactured by onsemi, while MJD32CT4 is manufactured by STMicroelectronics. Both parts meet identical electrical specifications and power dissipation (1.56 W for MJD32CT4G, 15 W for MJD32CT4). The STMicroelectronics part offers higher power capability but with a narrower operating temperature range (−40 to 150 °C versus −65 to 150 °C).

Q: Are all substitute parts in the same package?

A: Yes. All substitute parts listed use the TO-252-3 DPAK surface mount package configuration. Mechanical compatibility is maintained across all alternatives.

Q: What is the significance of the power dissipation differences?

A: The original MJD32CRL is rated at 1.56 W. Substitute parts from STMicroelectronics (MJD32CT4, MJD32CT4-A) and Diodes Incorporated (MJD32C-13, MJD32CQ-13) are rated at 15 W, providing greater thermal headroom. The Micro Commercial Co part (MJD32C-TP) is rated at 1.25 W, which is lower than the original specification. Power dissipation rating selection depends on the thermal requirements of the specific application.

Q: Which substitute part has the best availability?

A: MJD32CT4G has the highest inventory availability at 37,200 units in stock. MJD32CQ-13 has 30,400 units, and MJD32CT4 has 44,838 units. Availability should be verified with the component supplier for current procurement requirements.

Q: Are all substitute parts RoHS compliant?

A: All substitute parts listed are ROHS3 Compliant. The original MJD32CRL is RoHS non-compliant. If RoHS compliance is a design requirement, any of the listed substitutes will satisfy this requirement.

Q: What is the operating temperature range consideration for substitution?

A: The original MJD32CRL operates from −65 to 150 °C. Substitute parts have the following ranges: MJD32CRLG and MJD32CT4G (−65 to 150 °C, identical); MJD32CT4 and MJD32CT4-A (−40 to 150 °C, narrower low-temperature range); MJD32C-13 and MJD32CQ-13 (−55 to 150 °C, narrower low-temperature range); MJD32C-TP (−40 to 150 °C, narrower low-temperature range). Selection should account for the minimum operating temperature requirement of the application.

Q: Can MJD32C-TP be used in high-power applications?

A: MJD32C-TP has a power dissipation rating of 1.25 W, which is lower than the original MJD32CRL (1.56 W). This part is not suitable for applications requiring power dissipation above 1.25 W. For applications requiring higher power capability, MJD32CT4, MJD32CT4-A, MJD32C-13, or MJD32CQ-13 are recommended.

Q: What is the DC current gain specification for all substitute parts?

A: All substitute parts maintain the same DC current gain specification: hFE (Min) of 10 at Ic = 3 A and Vce = 4 V. This parameter is consistent across all alternatives and the original part.

Q: Are there any frequency response differences among the substitutes?

A: The original MJD32CRL has a transition frequency of 3 MHz. Substitute parts from onsemi (MJD32CRLG, MJD32CT4G), Diodes Incorporated (MJD32C-13, MJD32CQ-13), and Micro Commercial Co (MJD32C-TP) maintain the 3 MHz specification. STMicroelectronics parts (MJD32CT4, MJD32CT4-A) do not specify transition frequency in the provided data.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message