MJD31CTF Equivalent & Substitute Parts

Part Overview

The MJD31CTF is an NPN bipolar junction transistor manufactured by onsemi, rated for 100 V collector-emitter breakdown voltage and 3 A maximum collector current in a surface mount DPAK package. This device is classified as obsolete, indicating it has been discontinued and is no longer recommended for new designs. The MJD31CTF remains in limited inventory (3,881 pieces), making substitute parts necessary for ongoing production requirements and new circuit implementations.

Substiute Parts

MJD31CTF
onsemiIn Stock: 3895MJD31CTF Datasheet
MJD31CTF
Current Part
MJD31CT4G
onsemiIn Stock: 35269MJD31CT4G Datasheet
MJD31CT4G
Direct
2SC4134T-TL-E
onsemiIn Stock: 6672SC4134T-TL-E Datasheet
2SC4134T-TL-E
Similar
2SC4135S-TL-E
onsemiIn Stock: 12282SC4135S-TL-E Datasheet
2SC4135S-TL-E
Similar
2SC4135T-TL-E
onsemiIn Stock: 14952SC4135T-TL-E Datasheet
2SC4135T-TL-E
Similar
MJD31T4G
onsemiIn Stock: 41719MJD31T4G Datasheet
MJD31T4G
Similar
NJVMJD31CG
onsemiIn Stock: 5352NJVMJD31CG Datasheet
NJVMJD31CG
Similar
MJD31CRLG
onsemiIn Stock: 1592MJD31CRLG Datasheet
MJD31CRLG
Parametric Equivalent
NJVMJD31CRLG
onsemiIn Stock: 7862NJVMJD31CRLG Datasheet
NJVMJD31CRLG
Parametric Equivalent
MJD31C-13
Diodes IncorporatedIn Stock: 20136MJD31C-13 Datasheet
MJD31C-13
Direct
MJD31CQ-13
Diodes IncorporatedIn Stock: 5416MJD31CQ-13 Datasheet
MJD31CQ-13
Direct
MJD31CT4
onsemiIn Stock: 17079MJD31CT4 Datasheet
MJD31CT4
Direct
MJD31CT4-A
STMicroelectronicsIn Stock: 15475MJD31CT4-A Datasheet
MJD31CT4-A
Direct

Key Parameters

Parameter Value Unit
Transistor Type NPN
Collector Current (Max) 3 A
Collector-Emitter Breakdown Voltage (Max) 100 V
Vce Saturation (Max) 1.2 V @ 375mA, 3A
Collector Cutoff Current (Max) 50 µA
DC Current Gain (hFE Min) 10 @ 3A, 4V
Power Dissipation (Max) 1.56 W
Transition Frequency 3 MHz
Package Type TO-252-3 (DPAK)
Mounting Type Surface Mount

Substitute Part Grouping Explanation

Substitute parts for the MJD31CTF are classified into three categories based on electrical and mechanical compatibility:

Direct Equivalents (Identical Electrical Specifications): Parts that match all critical electrical parameters—3 A collector current, 100 V breakdown voltage, 1.2 V saturation voltage, 10 minimum hFE, 1.56 W power rating, and 3 MHz transition frequency—while maintaining the same DPAK package. These parts differ only in packaging format (tape & reel, cut tape, or tube) and product status (active vs. obsolete).

Parametric Equivalents (Same Base Electrical Specifications, Different Packaging): Parts that maintain identical electrical performance but may have different packaging configurations or manufacturer designations. These include both onsemi and Diodes Incorporated variants of the MJD31 base product.

Similar Parts (Reduced Current or Voltage Rating): Parts that share the same package and general application space but with reduced maximum ratings. The MJD31T4G operates at 40 V (versus 100 V) with the same 3 A current rating. The 2SC4134T-TL-E and 2SC4135 series operate at 100 V but with reduced current ratings (1 A and 2 A respectively) and higher transition frequencies (120 MHz).

Substitution eligibility is determined by matching the following critical parameters: collector current rating, collector-emitter breakdown voltage, saturation voltage characteristics, DC current gain, power dissipation, and package type.

Parameter Comparison

Part Number Manufacturer Ic (Max) [A] Vce(BR) [V] Vce Sat [V] hFE Min Power [W] Freq [MHz] Package Status
MJD31CTF onsemi 3 100 1.2 10 1.56 3 DPAK Obsolete
MJD31CT4G onsemi 3 100 1.2 10 1.56 3 DPAK Active
NJVMJD31CG onsemi 3 100 1.2 10 1.56 3 DPAK Active
MJD31CRLG onsemi 3 100 1.2 10 1.56 3 DPAK Active
NJVMJD31CRLG onsemi 3 100 1.2 10 1.56 3 DPAK Active
MJD31C-13 Diodes Inc. 3 100 1.2 10 1.56 3 DPAK Active
MJD31CQ-13 Diodes Inc. 3 100 1.2 10 1.56 3 TO-252-3 Not For New Designs
MJD31T4G onsemi 3 40 1.2 10 1.56 3 DPAK Active
2SC4134T-TL-E onsemi 1 100 0.4 200 0.8 120 TP-FA Active
2SC4135T-TL-E onsemi 2 100 0.4 200 1 120 TP-FA Active

Engineering Selection Recommendations

Primary Substitutes (Direct Electrical Equivalents):

MJD31CT4G, NJVMJD31CG, MJD31CRLG, NJVMJD31CRLG, and MJD31C-13 are direct electrical equivalents to the MJD31CTF. All maintain identical collector current (3 A), breakdown voltage (100 V), saturation voltage (1.2 V), DC current gain (10 minimum), power dissipation (1.56 W), and transition frequency (3 MHz) specifications. These parts are classified as active products and are suitable for new designs. Selection among these equivalents depends on packaging format requirements: MJD31CT4G and MJD31CRLG are available in cut tape and digi-reel formats; NJVMJD31CG is supplied in tube packaging; NJVMJD31CRLG is available in tape and reel format; MJD31C-13 is supplied in tape and reel format by Diodes Incorporated.

Secondary Substitutes (Reduced Voltage Rating):

MJD31T4G maintains the same 3 A collector current, 1.2 V saturation voltage, 10 minimum hFE, 1.56 W power rating, and 3 MHz transition frequency as the MJD31CTF but operates at a reduced collector-emitter breakdown voltage of 40 V. This part is suitable for applications where the 100 V rating is not required.

Limited Substitutes (Reduced Current Rating):

2SC4135T-TL-E operates at 100 V breakdown voltage with 2 A maximum collector current, 1 W power dissipation, and 120 MHz transition frequency. This part is suitable for applications requiring lower current levels but higher frequency performance. 2SC4134T-TL-E operates at 100 V with 1 A maximum collector current and 120 MHz transition frequency, suitable for even lower current applications.

Not Recommended for New Designs:

MJD31CQ-13 is classified as "Not For New Designs" and should not be selected for new circuit implementations, despite electrical equivalence.

Frequently Asked Questions (FAQ)

Q: Can MJD31CT4G be used as a direct replacement for MJD31CTF?

A: Yes. MJD31CT4G is electrically identical to MJD31CTF across all critical parameters: 3 A collector current, 100 V breakdown voltage, 1.2 V saturation voltage, 10 minimum hFE, 1.56 W power dissipation, and 3 MHz transition frequency. The primary difference is product status—MJD31CT4G is active while MJD31CTF is obsolete. Packaging format may differ depending on supplier configuration.

Q: What is the difference between MJD31CT4G and NJVMJD31CG?

A: Both parts are electrically identical with matching electrical specifications. The difference lies in the manufacturer designation and packaging format. MJD31CT4G is supplied in cut tape and digi-reel format, while NJVMJD31CG is supplied in tube packaging. Both are onsemi products with active status.

Q: Can MJD31T4G replace MJD31CTF in all applications?

A: MJD31T4G can replace MJD31CTF only in applications where the collector-emitter breakdown voltage requirement does not exceed 40 V. The MJD31T4G is rated for 40 V maximum, compared to the MJD31CTF's 100 V rating. All other electrical parameters are identical. Applications requiring the full 100 V rating cannot use MJD31T4G.

Q: Why are there multiple part numbers for the same electrical specifications?

A: Multiple part numbers exist due to different packaging formats (tape & reel, cut tape, tube), manufacturer variants (onsemi vs. Diodes Incorporated), and product lifecycle designations. These variations allow selection based on specific procurement, assembly, and supply chain requirements while maintaining identical electrical performance.

Q: Is MJD31C-13 from Diodes Incorporated compatible with the onsemi MJD31CTF?

A: Yes. MJD31C-13 is electrically compatible with MJD31CTF, matching all critical electrical parameters. Both are rated for 3 A collector current, 100 V breakdown voltage, 1.2 V saturation voltage, 10 minimum hFE, 1.56 W power dissipation, and 3 MHz transition frequency. MJD31C-13 is an active product from Diodes Incorporated and is suitable for new designs.

Q: What are the key parameters that determine substitution eligibility?

A: Substitution eligibility is determined by matching: collector current rating (Ic), collector-emitter breakdown voltage (Vce BR), saturation voltage (Vce Sat), DC current gain (hFE), power dissipation rating, transition frequency, and package type. All these parameters must remain within the original specifications for direct substitution.

Q: Can 2SC4135T-TL-E be used instead of MJD31CTF?

A: 2SC4135T-TL-E can be used only in applications where the maximum collector current requirement does not exceed 2 A. The 2SC4135T-TL-E is rated for 2 A maximum collector current, compared to the MJD31CTF's 3 A rating. Additionally, the 2SC4135T-TL-E operates at 120 MHz transition frequency versus 3 MHz for the MJD31CTF. Applications requiring the full 3 A current rating cannot use this part.

Q: What is the difference between cut tape, tape & reel, and tube packaging?

A: These are packaging and delivery formats that do not affect electrical performance. Cut tape (CT) provides individual strips of components; tape & reel (TR) provides components on continuous tape wound on reels for automated assembly; tube packaging provides components in plastic tubes. Selection depends on assembly equipment compatibility and procurement preferences.

Q: Is MJD31CQ-13 recommended for new designs?

A: No. MJD31CQ-13 is classified as "Not For New Designs" and should not be selected for new circuit implementations. Use active-status alternatives such as MJD31CT4G, MJD31C-13, or NJVMJD31CG instead.

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