MJD3055G Equivalent & Substitute Parts

Part Overview

The MJD3055G is an NPN bipolar junction transistor manufactured by onsemi, designed for surface mount applications in the DPAK package. This component operates at a maximum collector current of 10 A and collector-emitter breakdown voltage of 60 V, with a maximum power dissipation of 1.75 W. The MJD3055G is classified as obsolete, necessitating identification of active equivalent parts for new designs and ongoing production requirements. Substitute parts must maintain electrical and mechanical compatibility while offering active product status and current availability.

Substiute Parts

MJD3055G

onsemiIn Stock: 2042MJD3055G Datasheet

Current PartRFQ

NJVMJD3055T4G

onsemiIn Stock: 20177NJVMJD3055T4G Datasheet

DirectRFQ

MJD3055T4

STMicroelectronicsIn Stock: 3606MJD3055T4 Datasheet

DirectRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the MJD3055G is determined by strict equivalence across the following critical parameters:

Electrical Equivalence Criteria:

• Transistor type: NPN
• Maximum collector current: 10 A
• Collector-emitter breakdown voltage: 60 V
• Vce saturation characteristics: 8V @ 3.3A, 10A
• Collector cutoff current: 50 µA
• DC current gain (hFE): 20 @ 4A, 4V minimum
• Transition frequency: 2 MHz

Mechanical Equivalence Criteria:

• Mounting type: Surface Mount
• Package designation: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Moisture sensitivity level: 1 (Unlimited)

Compliance Criteria:

• REACH status: REACH Unaffected
• ECCN classification: EAR99
• HTSUS code: 8541.29.0095

Substitute parts must satisfy all electrical and mechanical parameters listed above. Packaging format (Tape & Reel, Cut Tape, or bulk) does not affect electrical substitution but may influence procurement and handling procedures.

Parameter Comparison

Engineering Selection Recommendations

NJVMJD3055T4G (onsemi): This part is a direct electrical and mechanical equivalent to the MJD3055G with active product status. The NJVMJD3055T4G maintains identical electrical specifications across all critical parameters including collector current, breakdown voltage, saturation characteristics, and operating temperature range. The part is supplied in Tape & Reel packaging format and carries ROHS3 compliance certification. This substitute is suitable for direct replacement in new designs and production continuations.

MJD3055T4 (STMicroelectronics): This part maintains electrical equivalence across all core parameters: collector current, breakdown voltage, saturation characteristics, and transition frequency. The MJD3055T4 is manufactured by STMicroelectronics and carries active product status with ROHS3 compliance. A notable difference exists in the maximum power dissipation specification, where the MJD3055T4 is rated at 20 W compared to the 1.75 W rating of the MJD3055G. The operating temperature specification for the MJD3055T4 lists only the maximum junction temperature (150°C) without the minimum temperature specification. The part is supplied in Cut Tape and Digi-Reel® packaging formats. This substitute is electrically compatible for applications within the thermal and power envelope of the original design.

Both substitute parts satisfy REACH and export control requirements identical to the original MJD3055G component.

Frequently Asked Questions (FAQ)

Q: Can the NJVMJD3055T4G be used as a direct replacement for the MJD3055G?

A: Yes. The NJVMJD3055T4G is electrically and mechanically equivalent to the MJD3055G across all specified parameters. Both parts are NPN transistors with 10 A maximum collector current, 60 V breakdown voltage, identical saturation characteristics, and the same DPAK package. The primary difference is product status: the NJVMJD3055T4G is active while the MJD3055G is obsolete.

Q: What is the difference between the MJD3055T4 and the NJVMJD3055T4G?

A: Both parts are electrically equivalent to the MJD3055G in terms of collector current, breakdown voltage, saturation characteristics, and transition frequency. The MJD3055T4 is manufactured by STMicroelectronics while the NJVMJD3055T4G is manufactured by onsemi. The MJD3055T4 has a higher maximum power dissipation rating (20 W versus 1.75 W). Both parts use the same DPAK package and are ROHS3 compliant.

Q: Does packaging format affect electrical substitution?

A: No. Packaging format (Tape & Reel, Cut Tape, or bulk) does not affect electrical performance or substitution compatibility. Format selection is determined by procurement, handling, and assembly process requirements rather than electrical characteristics.

Q: Are the substitute parts RoHS compliant?

A: Yes. Both NJVMJD3055T4G and MJD3055T4 carry ROHS3 compliance certification. The original MJD3055G does not specify RoHS status in the provided data.

Q: What is the operating temperature range for each part?

A: The MJD3055G and NJVMJD3055T4G both specify an operating temperature range of -55°C to 150°C (junction temperature). The MJD3055T4 specifies only the maximum junction temperature of 150°C without a minimum temperature specification in the provided data.

Q: Are all three parts REACH compliant?

A: Yes. The MJD3055G, NJVMJD3055T4G, and MJD3055T4 all carry REACH Unaffected status, indicating compliance with REACH regulations.

Q: Can these parts be used interchangeably in existing designs?

A: The NJVMJD3055T4G is a direct equivalent and can be used interchangeably with the MJD3055G. The MJD3055T4 is electrically compatible but has a higher power dissipation rating; designs operating near the 1.75 W limit of the original part will benefit from the increased thermal capability of the MJD3055T4.