MJD2955-1G Equivalent & Substitute Parts

Part Overview

The MJD2955-1G is a PNP bipolar junction transistor manufactured by onsemi, rated for 60V collector-emitter breakdown voltage and 10A maximum collector current. This component is packaged in TO-251-3 (IPAK) configuration for through-hole mounting applications. The part is classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design support and procurement continuity. Substitute parts maintain identical electrical specifications while offering different packaging or mounting technologies to accommodate modern manufacturing processes.

Substiute Parts

MJD2955-1G

onsemiIn Stock: 828MJD2955-1G Datasheet

Current PartRFQ

MJD2955G

onsemiIn Stock: 15479MJD2955G Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the MJD2955-1G is determined by electrical parameter equivalence across the following critical specifications:

• Transistor Type: PNP configuration
• Maximum Collector Current (Ic): 10A
• Collector-Emitter Breakdown Voltage: 60V
• Saturation Voltage (Vce): 8V @ specified bias conditions
• DC Current Gain (hFE): 20 minimum @ 4A, 4V
• Maximum Power Dissipation: 1.75W
• Transition Frequency: 2MHz
• Operating Temperature Range: -55°C to 150°C

The MJD2955G substitute part maintains all electrical parameters identically to the MJD2955-1G. The primary distinction is the mounting technology: the MJD2955G utilizes surface-mount DPAK (TO-252-3) packaging instead of through-hole IPAK configuration. This substitution is valid for applications where PCB assembly processes support surface-mount technology and thermal management requirements remain within the 1.75W power rating.

Parameter Comparison

Engineering Selection Recommendations

The MJD2955G is the direct electrical equivalent to the MJD2955-1G and is suitable for substitution in applications where the following conditions are met:

PCB Assembly Compatibility: The MJD2955G requires surface-mount assembly capability. Designs currently utilizing through-hole IPAK mounting must be redesigned for DPAK surface-mount technology, including PCB footprint modification and reflow soldering processes.

Product Status Advantage: The MJD2955G maintains active product status with onsemi, ensuring continued availability and manufacturing support. The MJD2955-1G is classified as obsolete, making the MJD2955G the preferred long-term solution for new designs and production continuity.

Compliance Status: The MJD2955G is RoHS3 compliant, whereas the MJD2955-1G compliance status is not specified in the provided data. Both parts are REACH unaffected and classified under ECCN EAR99.

Thermal Management: Both parts are rated for identical maximum power dissipation (1.75W) and operating temperature range (-55°C to 150°C). DPAK packaging provides superior thermal characteristics compared to IPAK due to the exposed tab design, allowing improved heat dissipation in high-current applications within the 10A rating.

Inventory Availability: The MJD2955G is available in significantly higher quantities (15,400 pcs) compared to the MJD2955-1G (759 pcs), supporting production scalability and supply chain stability.

Frequently Asked Questions (FAQ)

Q: Can the MJD2955G directly replace the MJD2955-1G in existing through-hole PCB designs?

A: No. The MJD2955G uses DPAK surface-mount packaging while the MJD2955-1G uses TO-251-3 through-hole IPAK packaging. PCB footprint redesign and assembly process modification are required. However, electrical performance is identical.

Q: What are the key electrical differences between MJD2955-1G and MJD2955G?

A: There are no electrical differences. Both parts are PNP transistors with identical ratings: 60V breakdown voltage, 10A maximum collector current, 1.75W power dissipation, 2MHz transition frequency, and -55°C to 150°C operating temperature range.

Q: Why is the MJD2955-1G classified as obsolete?

A: The MJD2955-1G is obsolete due to manufacturing discontinuation by onsemi. The MJD2955G represents the active product line continuation with equivalent electrical specifications and modern surface-mount packaging.

Q: Are there thermal management differences between IPAK and DPAK packages?

A: Yes. DPAK (TO-252-3) includes an exposed tab for direct thermal coupling to PCB copper, providing superior heat dissipation compared to IPAK (TO-251-3). Both packages support the 1.75W maximum power rating, but DPAK enables more efficient thermal performance in high-current applications.

Q: What compliance certifications apply to the MJD2955G?

A: The MJD2955G is RoHS3 compliant, REACH unaffected, and classified under ECCN EAR99. The MJD2955-1G compliance status is not specified in available documentation.

Q: Can I use the MJD2955G in applications requiring through-hole mounting?

A: No. The MJD2955G is a surface-mount component. Through-hole mounting requires the MJD2955-1G or equivalent through-hole PNP transistor with matching electrical specifications. However, PCB redesign to accommodate surface-mount technology is the recommended approach for new designs.

Q: What is the minimum DC current gain for both parts?

A: Both the MJD2955-1G and MJD2955G have a minimum DC current gain (hFE) of 20, measured at 4A collector current and 4V collector-emitter voltage.

Q: Are the lead configurations identical between MJD2955-1G and MJD2955G?

A: No. The MJD2955-1G (IPAK) has short leads for through-hole insertion. The MJD2955G (DPAK) has two leads plus an exposed tab for surface mounting. Pin assignment and functional connectivity are equivalent, but physical lead geometry differs.