MJD210 Equivalent & Substitute Parts

Part Overview

The MJD210 is a Surface Mount PNP Bipolar Junction Transistor manufactured by onsemi, rated for 25 V collector-emitter breakdown voltage and 5 A maximum collector current. The device is housed in a DPAK (TO-252-3) package and operates across a temperature range of -65°C to 150°C. The MJD210 is classified as obsolete, necessitating identification of equivalent and substitute components for new designs and ongoing production support. Active alternatives with identical or superior electrical characteristics are available from multiple manufacturers.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP	-
Current - Collector (Ic) Max	5	A
Voltage - Collector Emitter Breakdown (Max)	25	V
Vce Saturation (Max) @ Ib, Ic	1.8V @ 1A, 5A	-
Current - Collector Cutoff (Max)	100	nA
DC Current Gain (hFE) Min @ Ic, Vce	45 @ 2A, 1V	-
Power - Max	1.4	W
Frequency - Transition	65	MHz
Operating Temperature	-65 to 150	°C
Mounting Type	Surface Mount	-
Package / Case	TO-252-3, DPAK	-
Product Status	Obsolete	-

Substitute Part Grouping Explanation

Substitution of the MJD210 is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Transistor Type: PNP configuration required
Current Rating: Minimum 5 A collector current capability
Voltage Rating: Minimum 25 V collector-emitter breakdown voltage
Package Type: Surface Mount DPAK (TO-252-3) preferred for direct mechanical compatibility
Operating Temperature Range: Support for -65°C to 150°C or equivalent upper limit

Substitution Categories:

Direct Equivalent: MJD210G matches all electrical specifications and package requirements. This part is manufactured by onsemi under the same base product number with identical ratings. The primary distinction is product status (Active vs. Obsolete) and packaging format (Tube vs. standard).

Functional Equivalent with Enhanced Ratings: STD888T4 provides superior voltage rating (30 V vs. 25 V) and power dissipation (15 W vs. 1.4 W) while maintaining 5 A collector current and DPAK packaging. This part is suitable for applications where the MJD210 specifications are met or exceeded.

Similar Specification with Package Variation: 2SB1412TLQ and PHPT60406PYX provide PNP transistor functionality with 5 A or greater collector current but differ in voltage ratings, power dissipation, and package types. These parts require mechanical redesign considerations.

Parameter Comparison

Parameter	MJD210	MJD210G	STD888T4	2SB1412TLQ	PHPT60406PYX
Manufacturer	onsemi	onsemi	STMicroelectronics	Rohm Semiconductor	Nexperia USA Inc.
Transistor Type	PNP	PNP	PNP	PNP	PNP
Ic (Max)	5 A	5 A	5 A	5 A	6 A
Vce Breakdown (Max)	25 V	25 V	30 V	20 V	40 V
Vce Saturation (Max)	1.8V @ 1A, 5A	1.8V @ 1A, 5A	1.2V @ 500mA, 10A	1V @ 100mA, 4A	540mV @ 300mA, 6A
Icbo (Max)	100 nA	100 nA	10 µA	500 nA	100 nA
hFE (Min)	45 @ 2A, 1V	45 @ 2A, 1V	100 @ 500mA, 1V	82 @ 500mA, 2V	210 @ 500mA, 2V
Power (Max)	1.4 W	1.4 W	15 W	10 W	1.35 W
Frequency - Transition	65 MHz	65 MHz	-	120 MHz	110 MHz
Operating Temperature (Max)	150°C	150°C	150°C	150°C	175°C
Package / Case	TO-252-3, DPAK	TO-252-3, DPAK	TO-252-3, DPAK	TO-252-3, DPAK	SC-100, SOT-669
Product Status	Obsolete	Active	Active	Not For New Designs	Active
RoHS Status	Non-compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

MJD210G is the primary recommended substitute for direct replacement applications. This part is manufactured by onsemi under the same base product number and provides identical electrical specifications and DPAK packaging. MJD210G carries Active product status and ROHS3 compliance, addressing the obsolescence and regulatory concerns associated with the original MJD210. No circuit redesign is required for this substitution.

STD888T4 is suitable for applications where enhanced voltage margin and power dissipation capability are beneficial. This STMicroelectronics device maintains the 5 A collector current rating and DPAK package format while providing 30 V breakdown voltage (versus 25 V) and 15 W power rating (versus 1.4 W). STD888T4 is Active status and ROHS3 compliant. No mechanical redesign is necessary due to identical DPAK packaging.

2SB1412TLQ provides functional PNP transistor capability with 5 A collector current but operates at reduced voltage rating (20 V versus 25 V). This Rohm Semiconductor device is classified as Not For New Designs and carries higher collector cutoff current (500 nA versus 100 nA). This part is suitable only for legacy system maintenance where voltage derating is acceptable.

PHPT60406PYX is an automotive-qualified alternative from Nexperia with enhanced specifications including 40 V breakdown voltage, 6 A collector current, and 175°C maximum operating temperature. However, this device uses SC-100/SOT-669 packaging (LFPAK56, Power-SO8) rather than DPAK, requiring PCB layout modification. PHPT60406PYX is Active status and AEC-Q100 qualified.

Frequently Asked Questions (FAQ)

Q: Can MJD210G be used as a direct replacement for MJD210 without circuit modification?

A: Yes. MJD210G provides identical electrical specifications across all rated parameters including collector current (5 A), breakdown voltage (25 V), saturation voltage, current gain, power dissipation (1.4 W), and transition frequency (65 MHz). Both devices use TO-252-3 DPAK packaging. No circuit redesign is required.

Q: What is the primary advantage of MJD210G over the original MJD210?

A: MJD210G carries Active product status versus Obsolete for MJD210, ensuring continued availability and manufacturing support. MJD210G is ROHS3 compliant, addressing regulatory requirements for new designs and production environments.

Q: Is STD888T4 compatible with MJD210 applications?

A: STD888T4 is compatible for applications where the MJD210 specifications are met or exceeded. The device provides superior voltage rating (30 V versus 25 V) and power dissipation (15 W versus 1.4 W) while maintaining identical 5 A collector current and DPAK packaging. No PCB modification is required. Applications operating at or below 25 V with power dissipation below 1.4 W will function identically to MJD210.

Q: Why does 2SB1412TLQ have a lower voltage rating than MJD210?

A: 2SB1412TLQ is rated for 20 V collector-emitter breakdown voltage, which is 5 V lower than the MJD210 specification of 25 V. This part is classified as Not For New Designs by Rohm Semiconductor. Substitution is limited to legacy applications where voltage derating is acceptable and where the 20 V rating provides sufficient margin for the circuit design.

Q: What package considerations apply to PHPT60406PYX?

A: PHPT60406PYX uses SC-100/SOT-669 packaging (LFPAK56, Power-SO8) rather than the DPAK format of MJD210. This package difference requires PCB layout modification including different pad patterns, trace routing, and thermal management considerations. PHPT60406PYX is suitable for new designs where automotive qualification (AEC-Q100) and enhanced thermal performance are required.

Q: Can 2SB1412TLQ be used in high-reliability applications?

A: 2SB1412TLQ is classified as Not For New Designs, indicating that Rohm Semiconductor does not recommend this part for new product development. While the device may function in legacy system maintenance, it is not suitable for new high-reliability applications. MJD210G or STD888T4 are preferred alternatives for reliability-critical designs.

Q: What is the significance of the higher hFE rating in PHPT60406PYX?

A: PHPT60406PYX provides minimum DC current gain (hFE) of 210 at 500 mA and 2 V, compared to 45 for MJD210 at 2 A and 1 V. Higher hFE indicates greater current amplification capability, which may reduce base drive requirements in switching applications. However, this parameter difference does not affect direct substitution compatibility if the circuit is designed for the MJD210 specifications.

Q: Are all substitute parts RoHS compliant?

A: MJD210 is RoHS non-compliant. All substitute parts listed (MJD210G, STD888T4, 2SB1412TLQ, and PHPT60406PYX) are ROHS3 compliant, meeting current regulatory requirements for electronic components in most jurisdictions.

Q: What is the operating temperature range for each substitute?

A: MJD210, MJD210G, STD888T4, and 2SB1412TLQ all support maximum junction temperature of 150°C. PHPT60406PYX extends this to 175°C, providing additional thermal margin for high-temperature applications. All parts support minimum operating temperature of -65°C or lower.

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