MJD200T4G Equivalent & Substitute Parts

Part Overview

The MJD200T4G is an NPN bipolar junction transistor manufactured by onsemi, designed for surface mount applications in the DPAK package. This transistor is rated for 25 V collector-emitter breakdown voltage and 5 A maximum collector current, with a maximum power dissipation of 1.4 W. The device operates across a temperature range of -65°C to 150°C and features a transition frequency of 65 MHz. The MJD200T4G maintains Active product status and is RoHS3 compliant with unlimited moisture sensitivity level (MSL 1).

Equivalent and substitute parts are identified to address inventory availability, supply chain continuity, or specific application requirements where parametric variations are acceptable within design margins.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Voltage - Collector Emitter Breakdown (Max)	25	V
Current - Collector (Ic) (Max)	5	A
Power - Max	1.4	W
Frequency - Transition	65	MHz
DC Current Gain (hFE) (Min) @ Ic, Vce	45 @ 2A, 1V	—
Vce Saturation (Max) @ Ib, Ic	1.8V @ 1A, 5A	—
Operating Temperature Range	-65 to 150	°C
Package / Case	TO-252-3, DPAK	—
Mounting Type	Surface Mount	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitute parts for the MJD200T4G are categorized based on electrical and mechanical compatibility. The primary substitution criterion is the ability to function within the same voltage and current operating envelope, with consideration for package compatibility and thermal characteristics.

Parametric Equivalent Classification: Parts classified as parametric equivalents share identical or functionally equivalent electrical specifications across all critical parameters: collector-emitter breakdown voltage, maximum collector current, power dissipation, transition frequency, DC current gain, and saturation voltage. These parts are direct functional replacements with no design modification required.

Similar Part Classification: Parts classified as similar devices exhibit variations in one or more electrical parameters while maintaining the same package form factor (DPAK). Similar parts may feature higher voltage ratings, increased current capacity, or enhanced power handling. Selection of similar parts requires verification that the application design accommodates the parametric differences.

Key Parameters for Substitution Determination:

Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Power - Max
Package / Case compatibility
Mounting Type
Operating Temperature Range

Parameter Comparison

Parameter	MJD200T4G (Main)	MJD200RLG	2STD1665T4	MJD44H11T4	PHPT60406NYX
Manufacturer	onsemi	onsemi	STMicroelectronics	STMicroelectronics	Nexperia USA Inc.
Transistor Type	NPN	NPN	NPN	NPN	NPN
Voltage - Collector Emitter Breakdown (Max)	25 V	25 V	65 V	80 V	40 V
Current - Collector (Ic) (Max)	5 A	5 A	6 A	8 A	6 A
Power - Max	1.4 W	1.4 W	15 W	20 W	1.35 W
Frequency - Transition	65 MHz	65 MHz	—	—	153 MHz
DC Current Gain (hFE) (Min) @ Ic, Vce	45 @ 2A, 1V	45 @ 2A, 1V	150 @ 2A, 1V	40 @ 4A, 1V	230 @ 500mA, 2V
Vce Saturation (Max) @ Ib, Ic	1.8V @ 1A, 5A	1.8V @ 1A, 5A	380mV @ 300mA, 6A	1V @ 400mA, 8A	380mV @ 300mA, 6A
Operating Temperature Range	-65 to 150°C	-65 to 150°C	150°C	150°C	175°C
Package / Case	TO-252-3, DPAK	TO-252-3, DPAK	TO-252-3, DPAK	TO-252-3, DPAK	SC-100, SOT-669
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Product Status	Active	Active	Active	Active	Active

Engineering Selection Recommendations

MJD200RLG (Parametric Equivalent): The MJD200RLG is a direct parametric equivalent to the MJD200T4G. Both devices are manufactured by onsemi and share identical electrical specifications across all critical parameters: 25 V breakdown voltage, 5 A maximum collector current, 1.4 W power dissipation, 65 MHz transition frequency, and matching DC current gain and saturation voltage characteristics. Both devices are packaged in TO-252-3 DPAK and maintain identical operating temperature ranges. The MJD200RLG is suitable for direct substitution without circuit modification. Both parts maintain Active product status and RoHS3 compliance.

2STD1665T4 (Similar Part - Higher Voltage and Current Rating): The 2STD1665T4 manufactured by STMicroelectronics operates at higher voltage (65 V) and current (6 A) ratings compared to the MJD200T4G. This device features significantly higher power dissipation (15 W) and improved saturation voltage characteristics (380 mV at 6 A versus 1.8 V at 5 A). The 2STD1665T4 is packaged in the same TO-252-3 DPAK form factor. Selection of this part is appropriate for applications requiring enhanced voltage or current headroom. The device maintains Active product status and RoHS3 compliance. Transition frequency data is not provided for this part.

MJD44H11T4 (Similar Part - Higher Voltage and Current Rating): The MJD44H11T4 manufactured by STMicroelectronics provides the highest voltage (80 V) and current (8 A) ratings among the substitute options, with maximum power dissipation of 20 W. This device is suitable for applications requiring substantial voltage and current margins beyond the MJD200T4G specifications. The MJD44H11T4 is packaged in TO-252-3 DPAK and maintains Active product status and RoHS3 compliance. Transition frequency data is not provided for this part.

PHPT60406NYX (Similar Part - Different Package, Higher Frequency): The PHPT60406NYX manufactured by Nexperia USA Inc. features a different package form factor (SC-100, SOT-669 / LFPAK56, Power-SO8) compared to the standard DPAK of the MJD200T4G. This device operates at 40 V breakdown voltage and 6 A maximum collector current with 1.35 W power dissipation. The PHPT60406NYX exhibits higher transition frequency (153 MHz) and higher DC current gain (230 @ 500 mA, 2V). This part includes automotive qualification (AEC-Q100) and operates at higher maximum junction temperature (175°C). Package compatibility must be verified before selection, as the LFPAK56 form factor differs from DPAK.

Frequently Asked Questions (FAQ)

Q: Can the MJD200RLG be used as a direct replacement for the MJD200T4G?

A: Yes. The MJD200RLG is a parametric equivalent with identical electrical specifications and package form factor. No circuit modification is required for substitution.

Q: What are the key differences between the MJD200T4G and the 2STD1665T4?

A: The 2STD1665T4 features higher voltage rating (65 V versus 25 V), higher current capacity (6 A versus 5 A), and significantly higher power dissipation capability (15 W versus 1.4 W). The 2STD1665T4 also exhibits superior saturation voltage performance. Both devices use the same DPAK package. The 2STD1665T4 is suitable for applications requiring enhanced electrical margins.

Q: Is the MJD44H11T4 compatible with the MJD200T4G circuit design?

A: The MJD44H11T4 shares the same DPAK package form factor and can be physically installed in the same PCB footprint. However, the MJD44H11T4 features significantly higher voltage (80 V) and current (8 A) ratings. Circuit verification is required to confirm that the application design accommodates these parametric differences.

Q: Why does the PHPT60406NYX have a different package designation?

A: The PHPT60406NYX uses the LFPAK56 (Power-SO8) package form factor, which differs from the DPAK package used by the MJD200T4G. The LFPAK56 package provides different thermal and electrical characteristics. PCB layout and footprint compatibility must be verified before selecting this part.

Q: What is the significance of the transition frequency difference between the MJD200T4G and PHPT60406NYX?

A: The PHPT60406NYX operates at 153 MHz transition frequency compared to 65 MHz for the MJD200T4G. Higher transition frequency indicates faster switching capability and improved high-frequency performance. This characteristic may be advantageous in high-speed switching applications.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed (MJD200RLG, 2STD1665T4, MJD44H11T4, and PHPT60406NYX) maintain RoHS3 compliance status, consistent with the MJD200T4G.

Q: What is the difference between parametric equivalent and similar parts?

A: Parametric equivalent parts (MJD200RLG) share identical electrical specifications and require no circuit modification. Similar parts (2STD1665T4, MJD44H11T4, PHPT60406NYX) exhibit variations in voltage, current, or power ratings and may require circuit verification before selection.

Q: Does the MJD200T4G have a lower operating temperature limit compared to other substitutes?

A: The MJD200T4G and MJD200RLG both operate from -65°C to 150°C. The 2STD1665T4 and MJD44H11T4 specify 150°C maximum junction temperature without lower limit specification. The PHPT60406NYX operates to 175°C maximum junction temperature. Application temperature requirements should be verified against selected part specifications.

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