MJD127T4 Equivalent & Substitute Parts

Part Overview

The MJD127T4 is a PNP Darlington bipolar junction transistor manufactured by onsemi, designed for surface mount applications in the DPAK package. This component is rated for 100 V collector-emitter breakdown voltage and 8 A maximum collector current, with a maximum power dissipation of 1.75 W. The part is classified as obsolete, necessitating identification of active equivalent alternatives that maintain electrical and mechanical compatibility for ongoing production and repair applications.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP - Darlington	—
Current - Collector (Ic) (Max)	8	A
Voltage - Collector Emitter Breakdown (Max)	100	V
Vce Saturation (Max) @ Ib, Ic	4V @ 80mA, 8A	—
Current - Collector Cutoff (Max)	10	µA
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 4A, 4V	—
Power - Max	1.75	W
Frequency - Transition	4	MHz
Mounting Type	Surface Mount	—
Package / Case	TO-252-3, DPAK (2 Leads + Tab), SC-63	—
RoHS Status	RoHS non-compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the MJD127T4 is determined by strict equivalence across the following critical parameters:

Electrical Equivalence Requirements:

Transistor Type: PNP - Darlington configuration
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
Current - Collector Cutoff (Max): 10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V

Mechanical Equivalence Requirements:

Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Moisture Sensitivity Level (MSL): 1 (Unlimited)

Two substitute parts meet these criteria: MJD127T4G (onsemi) and MJD127T4 (STMicroelectronics). Both maintain identical electrical specifications and package configuration, enabling direct substitution in circuit designs originally specified for the obsolete MJD127T4.

Parameter Comparison

Parameter	MJD127T4 (onsemi) - Main Part	MJD127T4G (onsemi) - Substitute	MJD127T4 (STMicroelectronics) - Substitute
Transistor Type	PNP - Darlington	PNP - Darlington	PNP - Darlington
Current - Collector (Ic) (Max)	8 A	8 A	8 A
Voltage - Collector Emitter Breakdown (Max)	100 V	100 V	100 V
Vce Saturation (Max) @ Ib, Ic	4V @ 80mA, 8A	4V @ 80mA, 8A	4V @ 80mA, 8A
Current - Collector Cutoff (Max)	10 µA	10 µA	10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 4A, 4V	1000 @ 4A, 4V	1000 @ 4A, 4V
Power - Max	1.75 W	1.75 W	20 W
Mounting Type	Surface Mount	Surface Mount	Surface Mount
Package / Case	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252-3, DPAK (2 Leads + Tab), SC-63
RoHS Status	RoHS non-compliant	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
Product Status	Obsolete	Active	Active

Engineering Selection Recommendations

MJD127T4G (onsemi) is the primary recommended substitute for the obsolete MJD127T4 (onsemi). This part maintains identical electrical specifications and package configuration while offering active product status and ROHS3 compliance. The MJD127T4G is available in Cut Tape and Digi-Reel packaging formats with substantial inventory availability (37,410 pcs), ensuring supply chain continuity.

MJD127T4 (STMicroelectronics) serves as an alternative substitute, providing identical core electrical parameters and package compatibility. This part differs in maximum power dissipation (20 W versus 1.75 W), which represents an enhanced thermal capability. The STMicroelectronics variant is also ROHS3 compliant and maintains active product status. Selection between the onsemi and STMicroelectronics variants depends on supply chain preferences and manufacturer qualification requirements.

Both substitutes are suitable for direct replacement in applications originally designed for the obsolete MJD127T4, with no circuit modifications required.

Frequently Asked Questions (FAQ)

Q: Can MJD127T4G be used as a direct replacement for the obsolete MJD127T4?

A: Yes. The MJD127T4G (onsemi) maintains identical electrical specifications including collector current (8 A), breakdown voltage (100 V), saturation voltage (4V @ 80mA, 8A), and DC current gain (1000 @ 4A, 4V). Both parts use the same DPAK package configuration, enabling direct substitution without circuit modifications.

Q: What is the difference between the onsemi MJD127T4G and the STMicroelectronics MJD127T4?

A: Both parts are electrically equivalent across all critical parameters. The primary difference is maximum power dissipation: the onsemi variant is rated at 1.75 W, while the STMicroelectronics variant is rated at 20 W. This difference reflects enhanced thermal performance in the STMicroelectronics device. Both are ROHS3 compliant and actively manufactured.

Q: Are there packaging differences between the main part and substitutes?

A: No. All three parts use identical packaging: TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount configuration. Moisture sensitivity level is uniform at MSL 1 (Unlimited) across all variants.

Q: Does the higher power rating of the STMicroelectronics MJD127T4 affect circuit compatibility?

A: No. The higher power rating (20 W versus 1.75 W) represents enhanced thermal capability and does not affect electrical performance or circuit operation. The part remains fully compatible with designs specified for the original 1.75 W device.

Q: What is the compliance status of the substitute parts?

A: Both MJD127T4G (onsemi) and MJD127T4 (STMicroelectronics) are ROHS3 compliant, whereas the original MJD127T4 is RoHS non-compliant. Both substitutes are REACH unaffected and classified under ECCN EAR99.

Q: Are the substitute parts available in the same packaging formats as the original?

A: The MJD127T4G is available in Cut Tape (CT) and Digi-Reel packaging. The original MJD127T4 packaging format is not specified in the provided data. Both substitutes support standard surface mount assembly processes.

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