MJD117T4 Equivalent & Substitute Parts

Part Overview

The MJD117T4 is a PNP Darlington bipolar junction transistor manufactured by onsemi, designed for surface mount applications in the TO-252-3 DPAK package. This component operates at maximum collector current of 2 A and collector-emitter breakdown voltage of 100 V, with a maximum power dissipation of 20 W. The part is classified as obsolete, necessitating identification of active equivalent alternatives for new designs and ongoing production requirements. Substitute parts must maintain electrical compatibility across critical parameters including current ratings, voltage specifications, and thermal characteristics while meeting modern compliance standards.

Substiute Parts

MJD117T4

onsemiIn Stock: 19446MJD117T4 Datasheet

Current PartRFQ

MJD117T4G

onsemiIn Stock: 17109MJD117T4G Datasheet

SimilarRFQ

MJD117T4

STMicroelectronicsIn Stock: 19419MJD117T4 Datasheet

DirectRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the MJD117T4 is determined by strict adherence to the following electrical and mechanical parameters:

Critical Matching Parameters:

• Transistor Type: PNP - Darlington configuration
• Current - Collector (Ic) Max: 2 A minimum
• Voltage - Collector Emitter Breakdown: 100 V minimum
• DC Current Gain (hFE): 1000 minimum @ 2A, 3V
• Frequency - Transition: 25 MHz minimum
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Mounting Type: Surface Mount
• Moisture Sensitivity Level: 1 (Unlimited)

Substitute parts must satisfy all critical parameters without degradation. Parts are grouped into two categories: direct manufacturer equivalents and active production alternatives. The MJD117T4G (onsemi) and MJD117T4 (STMicroelectronics) meet all electrical specifications and package requirements, with the distinction that MJD117T4G is actively produced while the original onsemi MJD117T4 is obsolete.

Parameter Comparison

Engineering Selection Recommendations

For New Designs and Active Production:

The MJD117T4G (onsemi) is the primary substitute for the obsolete MJD117T4. This part maintains full electrical equivalence across all critical parameters while offering active product status and ROHS3 compliance. The MJD117T4G is suitable for direct replacement in existing designs without circuit modification.

The MJD117T4 manufactured by STMicroelectronics provides an alternative source for the same part number, with identical electrical specifications and active production status. This part also meets ROHS3 compliance requirements. Selection between onsemi and STMicroelectronics variants depends on supply chain availability and procurement requirements.

Compliance Considerations:

Both substitute parts achieve ROHS3 compliance, addressing regulatory requirements for new product development. The original onsemi MJD117T4 is RoHS non-compliant and should not be specified for applications requiring environmental compliance certification.

Power Dissipation Note:

The MJD117T4G specifies maximum power dissipation of 1.75 W, compared to 20 W for both the original MJD117T4 and the STMicroelectronics MJD117T4. Applications requiring sustained power dissipation above 1.75 W must utilize the STMicroelectronics variant or the original onsemi part if available from existing inventory.

Frequently Asked Questions (FAQ)

Q: Can MJD117T4G be used as a direct replacement for the obsolete MJD117T4?

A: Yes. The MJD117T4G maintains identical electrical specifications for collector current (2 A), collector-emitter breakdown voltage (100 V), DC current gain (1000 @ 2A, 3V), transition frequency (25 MHz), and operating temperature range (-65 to 150 °C). Both parts use the TO-252-3 DPAK package with identical pinout and mounting requirements. No circuit modifications are required.

Q: What is the difference between MJD117T4G and the STMicroelectronics MJD117T4?

A: Both parts meet identical electrical specifications and package requirements. The primary differences are manufacturer source and maximum power dissipation rating. The MJD117T4G is rated for 1.75 W maximum power dissipation, while the STMicroelectronics variant is rated for 20 W. For applications requiring power dissipation above 1.75 W, the STMicroelectronics part is the appropriate selection.

Q: Are there any compliance differences between substitute parts?

A: Both MJD117T4G (onsemi) and MJD117T4 (STMicroelectronics) are ROHS3 compliant. The original onsemi MJD117T4 is RoHS non-compliant. For applications requiring RoHS compliance certification, only the active substitute parts are acceptable.

Q: Does the DPAK package remain the same across all variants?

A: Yes. All parts use the TO-252-3 DPAK (2 Leads + Tab) package, designated SC-63. PCB footprints, solder pad layouts, and thermal characteristics are identical. Surface mount assembly processes require no modification.

Q: What is the moisture sensitivity level for these parts?

A: All variants, including the original MJD117T4 and both substitutes, carry Moisture Sensitivity Level 1 (Unlimited). This classification indicates no moisture sensitivity restrictions during storage, handling, or assembly.

Q: Can I use MJD117T4G in high-power applications?

A: The MJD117T4G is rated for maximum power dissipation of 1.75 W. Applications requiring sustained power dissipation above this threshold must use the STMicroelectronics MJD117T4 (20 W rating) or source the original onsemi MJD117T4 from existing inventory if available.