MJD112-TP Equivalent & Substitute Parts

Part Overview

The MJD112-TP is an NPN Bipolar Junction Transistor (BJT) manufactured by Micro Commercial Co, rated for 100 V collector-emitter breakdown voltage and 2 A maximum collector current. This surface mount device in DPAK packaging is designed for general-purpose switching and amplification applications requiring 1 W power dissipation at up to 25 MHz transition frequency.

The MJD112-TP is classified as Obsolete. Equivalent and substitute parts are necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this component.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Voltage - Collector Emitter Breakdown (Max)	100	V
Current - Collector (Ic) (Max)	2	A
Power - Max	1	W
Frequency - Transition	25	MHz
Operating Temperature (TJ)	150	°C
Package / Case	TO-252-3, DPAK (2 Leads + Tab), SC-63	—
Mounting Type	Surface Mount	—
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 2A, 3V	—
Vce Saturation (Max) @ Ib, Ic	3V @ 40mA, 4A	—

Substitute Part Grouping Explanation

Substitution of the MJD112-TP is determined by the following critical parameters:

Mandatory Compatibility Criteria:

Voltage - Collector Emitter Breakdown (Max): 100 V minimum
Current - Collector (Ic) (Max): 2 A minimum
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ) minimum

Functional Equivalence Criteria:

Transistor Type: NPN (standard or Darlington configuration acceptable)
DC Current Gain (hFE): 1000 minimum @ rated conditions
Power dissipation capability: 1 W minimum

Substitute parts are grouped into two categories:

Direct Equivalents: Parts with identical electrical ratings and package specifications, differing only in manufacturer or product status.

Functional Equivalents: Parts with enhanced electrical specifications (higher current capacity, power rating, or frequency response) that maintain backward compatibility while offering improved performance margins or extended product lifecycle status.

Parameter Comparison

Part Number	Manufacturer	Transistor Type	Ic (Max) [A]	Vce Breakdown (Max) [V]	Power (Max) [W]	Frequency [MHz]	hFE (Min)	Product Status	Package
MJD112-TP	Micro Commercial Co	NPN	2	100	1	25	1000	Obsolete	DPAK
MJD122-TP	Micro Commercial Co	NPN - Darlington	8	100	1.5	—	1000	Active	DPAK
2SC4135S-TL-E	onsemi	NPN	2	100	1	120	140	Obsolete	DPAK
2SC4135T-TL-E	onsemi	NPN	2	100	1	120	200	Active	DPAK
2SD1980TL	Rohm Semiconductor	NPN - Darlington	2	100	10	—	1000	Not For New Designs	DPAK
MJD112RLG	onsemi	NPN - Darlington	2	100	1.75	25	1000	Active	DPAK
MJD112T4G	onsemi	NPN - Darlington	2	100	20	25	1000	Active	DPAK
NJVMJD112G	onsemi	NPN - Darlington	2	100	1.75	25	1000	Active	DPAK

Engineering Selection Recommendations

For Active Product Status Requirement:

When product lifecycle status is a critical factor, the following parts maintain Active status and are recommended for new designs:

MJD122-TP (Micro Commercial Co): Active status with enhanced 8 A collector current and 1.5 W power rating. Suitable for applications requiring higher current capacity within the same 100 V voltage class.
2SC4135T-TL-E (onsemi): Active status with identical 2 A / 100 V ratings and enhanced 120 MHz transition frequency. Suitable for higher-frequency switching applications.
MJD112RLG (onsemi): Active status with Darlington configuration, matching 2 A / 100 V ratings and 1.75 W power dissipation. Provides extended temperature range (-65°C to 150°C).
MJD112T4G (onsemi): Active status with Darlington configuration and significantly enhanced 20 W power dissipation capability, maintaining 2 A / 100 V ratings for thermal-demanding applications.
NJVMJD112G (onsemi): Active status with Darlington configuration, matching 2 A / 100 V ratings and 1.75 W power dissipation. Extended temperature range (-65°C to 150°C).

For Compliance and Certification:

All listed substitute parts maintain ROHS3 compliance, MSL Level 1 (Unlimited), and REACH Unaffected status, matching the original MJD112-TP specifications.

For Supply Chain Continuity:

The MJD112-TP (1,079 pcs in stock) remains available. However, MJD112T4G (25,100 pcs) and MJD122-TP (32,763 pcs) offer significantly higher inventory levels for extended production runs.

Frequently Asked Questions (FAQ)

Q: Can MJD122-TP replace MJD112-TP in all applications?

A: MJD122-TP is a Darlington configuration rated for 8 A collector current versus the MJD112-TP's 2 A. It maintains the same 100 V breakdown voltage and DPAK package. Substitution is valid for applications where the 2 A current requirement is not exceeded. The Darlington configuration provides higher current gain but may exhibit different switching characteristics. Verify saturation voltage and switching speed requirements against application specifications.

Q: What is the difference between standard NPN and Darlington configurations in these substitutes?

A: Standard NPN transistors (2SC4135S-TL-E, 2SC4135T-TL-E) provide faster switching speeds and lower saturation voltages. Darlington transistors (MJD122-TP, 2SD1980TL, MJD112RLG, MJD112T4G, NJVMJD112G) provide higher current gain and lower base drive requirements but exhibit higher saturation voltages and slower switching. Selection depends on application switching frequency and base drive availability.

Q: Are all substitute parts in the same DPAK package?

A: Yes. All listed substitute parts use TO-252-3, DPAK (2 Leads + Tab), SC-63 packaging, ensuring mechanical and thermal compatibility with the original MJD112-TP footprint.

Q: Which substitute offers the best thermal performance?

A: MJD112T4G provides 20 W maximum power dissipation, significantly exceeding the MJD112-TP's 1 W rating. This enhanced thermal capability accommodates higher power dissipation in the same package size. MJD112RLG and NJVMJD112G offer 1.75 W, providing modest thermal improvement.

Q: Can 2SC4135T-TL-E be used in high-frequency applications?

A: Yes. 2SC4135T-TL-E features 120 MHz transition frequency, compared to MJD112-TP's 25 MHz. This higher frequency response suits applications requiring faster switching. However, verify that the lower hFE (200 @ 100mA, 5V) versus MJD112-TP (1000 @ 2A, 3V) does not impact base drive requirements.

Q: What is the product status significance for component selection?

A: Active status indicates ongoing manufacturer support, continued availability, and compliance with current standards. Obsolete parts (MJD112-TP, 2SC4135S-TL-E) may face supply constraints. Not For New Designs status (2SD1980TL) indicates manufacturer discontinuation of new production. For new designs, prioritize Active status parts: MJD122-TP, 2SC4135T-TL-E, MJD112RLG, MJD112T4G, or NJVMJD112G.

Q: Are there temperature range differences among substitutes?

A: MJD112RLG and NJVMJD112G specify extended operating temperature range (-65°C to 150°C) versus MJD112-TP's 150°C maximum. This extended range provides design margin for low-temperature environments. Other substitutes specify 150°C maximum only.

Q: How do saturation voltage specifications affect substitution?

A: MJD112-TP specifies 3V saturation @ 40mA base, 4A collector. 2SC4135S-TL-E and 2SC4135T-TL-E specify 400mV @ 100mA base, 1A collector. Lower saturation voltage reduces power dissipation in saturated switching applications. Darlington parts (MJD122-TP, 2SD1980TL, MJD112RLG, MJD112T4G, NJVMJD112G) maintain 3V saturation, matching MJD112-TP characteristics.

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