MJD112T4 Equivalent & Substitute Parts

Part Overview

The MJD112T4 is a Bipolar (BJT) NPN Darlington transistor manufactured by onsemi, designed for surface mount applications in the DPAK package. This component is rated for 100 V collector-emitter breakdown voltage with a maximum collector current of 2 A and 20 W power dissipation. The part is classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design requirements and procurement continuity.

Substiute Parts

MJD112T4
onsemiIn Stock: 25863MJD112T4 Datasheet
MJD112T4
Current Part
MJD112T4
STMicroelectronicsIn Stock: 25943MJD112T4 Datasheet
MJD112T4
Direct

Key Parameters

Parameter Value
Transistor Type NPN - Darlington
Current - Collector (Ic) (Max) 2 A
Voltage - Collector Emitter Breakdown (Max) 100 V
Power - Max 20 W
Frequency - Transition 25 MHz
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 2A, 3V
Operating Temperature Range -65°C ~ 150°C (TJ)
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting Type Surface Mount

Substitute Part Grouping Explanation

Substitution of the obsolete onsemi MJD112T4 is determined by electrical and mechanical parameter alignment within the NPN Darlington transistor category. The critical parameters governing substitution are:

  • Transistor Type: NPN - Darlington configuration
  • Current Rating: Maximum collector current of 2 A
  • Voltage Rating: Collector-emitter breakdown voltage of 100 V
  • Power Dissipation: Maximum power rating of 20 W
  • Frequency Response: Transition frequency of 25 MHz
  • Current Gain: DC current gain (hFE) minimum of 1000 at specified conditions
  • Package: TO-252-3 DPAK surface mount package
  • Temperature Range: Operating junction temperature capability

The STMicroelectronics MJD112T4 meets these electrical specifications and shares the identical package configuration, establishing it as a direct functional equivalent for the obsolete onsemi part.

Parameter Comparison

Parameter onsemi MJD112T4 STMicroelectronics MJD112T4
Transistor Type NPN - Darlington NPN - Darlington
Current - Collector (Ic) (Max) 2 A 2 A
Voltage - Collector Emitter Breakdown (Max) 100 V 100 V
Power - Max 20 W 20 W
Frequency - Transition 25 MHz 25 MHz
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 2A, 3V 1000 @ 2A, 3V
Operating Temperature (TJ) -65°C ~ 150°C 150°C
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63 TO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting Type Surface Mount Surface Mount
Product Status Obsolete Active
RoHS Status RoHS non-compliant ROHS3 Compliant

Engineering Selection Recommendations

The STMicroelectronics MJD112T4 is the direct equivalent for the obsolete onsemi MJD112T4. Both parts share identical electrical specifications across all critical parameters: collector current, breakdown voltage, power rating, transition frequency, and current gain characteristics. Both utilize the TO-252-3 DPAK surface mount package, ensuring mechanical and thermal compatibility in existing PCB layouts.

The STMicroelectronics variant offers the advantage of active product status, ensuring ongoing availability and supply chain continuity. Additionally, the STMicroelectronics part carries ROHS3 compliance, meeting current environmental and regulatory requirements, whereas the onsemi part is RoHS non-compliant.

Both parts maintain REACH Unaffected status and identical EAR99 export classification. The moisture sensitivity level (MSL 1 - Unlimited) is equivalent for both manufacturers.

Frequently Asked Questions (FAQ)

Q: Can the STMicroelectronics MJD112T4 directly replace the onsemi MJD112T4 in existing designs?

A: Yes. Both parts are electrically and mechanically identical across all specified parameters. The STMicroelectronics part operates within the same current, voltage, power, and frequency specifications and uses the identical TO-252-3 DPAK package.

Q: What is the difference in operating temperature range between the two parts?

A: The onsemi part specifies -65°C to 150°C junction temperature, while the STMicroelectronics datasheet lists 150°C maximum. For applications requiring the full -65°C lower temperature limit, design verification against the STMicroelectronics datasheet is necessary.

Q: Does the RoHS compliance difference affect substitution?

A: The STMicroelectronics MJD112T4 is ROHS3 compliant, while the onsemi part is non-compliant. For applications subject to RoHS regulations or customer requirements, the STMicroelectronics part satisfies compliance mandates.

Q: Are there differences in saturation voltage characteristics?

A: The onsemi part specifies Vce saturation of 2V at 8mA base current and 2A collector current. The STMicroelectronics part specifies 3V at 40mA base current and 4A collector current. These represent different test conditions and do not affect substitution for the 2A rated application.

Q: Is the DPAK package identical between manufacturers?

A: Yes. Both parts use the TO-252-3 DPAK (2 Leads + Tab) SC-63 package. PCB footprints, thermal characteristics, and mounting procedures are identical.

Q: What is the current availability status of each part?

A: Both parts show 25,844 pieces in new original stock. The onsemi part is obsolete; the STMicroelectronics part is active and recommended for new designs and procurement.

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