MJD112RLG Equivalent & Substitute Parts

Part Overview

The MJD112RLG is an NPN Darlington bipolar junction transistor manufactured by onsemi, rated for 100 V collector-emitter breakdown voltage and 2 A maximum collector current. This surface mount device in DPAK packaging is designed for general-purpose switching and amplification applications requiring moderate power dissipation and current gain. The part is currently in active production status with full RoHS3 compliance and unlimited moisture sensitivity rating. Substitute parts are identified to address packaging format variations, manufacturer alternatives, and enhanced thermal performance specifications while maintaining electrical compatibility within the specified parameter range.

Substiute Parts

MJD112RLG
onsemiIn Stock: 727MJD112RLG Datasheet
MJD112RLG
Current Part
NJVMJD112G
onsemiIn Stock: 896NJVMJD112G Datasheet
NJVMJD112G
Direct
NJVMJD112T4G
onsemiIn Stock: 20219NJVMJD112T4G Datasheet
NJVMJD112T4G
Direct
MJD112T4
STMicroelectronicsIn Stock: 25943MJD112T4 Datasheet
MJD112T4
Direct

Key Parameters

Parameter Value Unit
Transistor Type NPN - Darlington
Current - Collector (Ic) Max 2 A
Voltage - Collector Emitter Breakdown (Max) 100 V
Vce Saturation (Max) @ Ib, Ic 3V @ 40mA, 4A
Current - Collector Cutoff (Max) 20 µA
DC Current Gain (hFE) Min @ Ic, Vce 1000 @ 2A, 3V
Frequency - Transition 25 MHz
Operating Temperature Range -65 to 150 °C (TJ)
Mounting Type Surface Mount
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63

Substitute Part Grouping Explanation

Substitution eligibility for the MJD112RLG is determined by strict equivalence across the following critical parameters:

Electrical Equivalence Requirements:

  • Transistor Type: NPN - Darlington configuration
  • Current - Collector (Ic) Max: 2 A
  • Voltage - Collector Emitter Breakdown: 100 V
  • Vce Saturation: 3V @ 40mA, 4A
  • Current - Collector Cutoff: 20 µA
  • DC Current Gain (hFE): 1000 @ 2A, 3V minimum
  • Frequency - Transition: 25 MHz

Mechanical Equivalence Requirements:

  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK

Compliance Requirements:

  • RoHS3 Compliant
  • Moisture Sensitivity Level: 1 (Unlimited)
  • REACH Status: REACH Unaffected

Substitute parts identified below maintain full electrical and mechanical compatibility with the MJD112RLG. Variations in packaging format (Cut Tape & Digi-Reel versus Tube versus Tape & Reel) and maximum power dissipation rating do not affect functional substitution capability.

Parameter Comparison

Parameter MJD112RLG (onsemi) NJVMJD112G (onsemi) NJVMJD112T4G (onsemi) MJD112T4 (STMicroelectronics)
Manufacturer onsemi onsemi onsemi STMicroelectronics
Transistor Type NPN - Darlington NPN - Darlington NPN - Darlington NPN - Darlington
Current - Collector (Ic) Max 2 A 2 A 2 A 2 A
Voltage - Collector Emitter Breakdown (Max) 100 V 100 V 100 V 100 V
Vce Saturation (Max) @ Ib, Ic 3V @ 40mA, 4A 3V @ 40mA, 4A 3V @ 40mA, 4A 3V @ 40mA, 4A
Current - Collector Cutoff (Max) 20 µA 20 µA 20 µA 20 µA
DC Current Gain (hFE) Min @ Ic, Vce 1000 @ 2A, 3V 1000 @ 2A, 3V 1000 @ 2A, 3V 1000 @ 2A, 3V
Frequency - Transition 25 MHz 25 MHz 25 MHz 25 MHz
Operating Temperature Range -65 to 150°C (TJ) -65 to 150°C (TJ) -65 to 150°C (TJ) -65 to 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-252-3, DPAK TO-252-3, DPAK TO-252-3, DPAK TO-252-3, DPAK
Packaging Format Cut Tape (CT) & Digi-Reel® Tube Tape & Reel (TR) Cut Tape (CT) & Digi-Reel®
Power - Max 1.75 W 1.75 W 20 W 20 W
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)
Product Status Active Active Active Active

Engineering Selection Recommendations

All identified substitute parts maintain full electrical and mechanical compatibility with the MJD112RLG across all critical performance parameters. Selection among these alternatives is determined by packaging format requirements and supply chain considerations rather than functional performance differences.

NJVMJD112G (onsemi): This substitute provides identical electrical specifications and operating temperature range in Tube packaging format. Selection is appropriate when tube packaging accommodates assembly line requirements or inventory management protocols.

NJVMJD112T4G (onsemi): This substitute maintains all electrical specifications and operating temperature range in Tape & Reel packaging format with enhanced maximum power dissipation rating of 20 W. The increased power rating provides additional thermal margin without affecting switching or amplification characteristics. Selection is appropriate for high-volume production environments utilizing automated tape-fed assembly equipment.

MJD112T4 (STMicroelectronics): This substitute is manufactured by STMicroelectronics and provides identical electrical specifications in Cut Tape & Digi-Reel packaging format with enhanced maximum power dissipation rating of 20 W. This option is suitable for applications requiring cross-manufacturer qualification or when STMicroelectronics supply chain availability is preferred.

All substitute parts carry active product status, full RoHS3 compliance, and unlimited moisture sensitivity rating, confirming regulatory and environmental compliance equivalence with the MJD112RLG.

Frequently Asked Questions (FAQ)

Q: Can NJVMJD112G be used as a direct replacement for MJD112RLG in circuit applications?

A: Yes. Both parts are electrically and mechanically equivalent NPN Darlington transistors with identical collector current (2 A), breakdown voltage (100 V), current gain (1000 @ 2A, 3V), and operating temperature range (-65 to 150°C). The difference in packaging format (Tube versus Cut Tape & Digi-Reel) does not affect functional performance in the circuit.

Q: What is the significance of the power rating difference between MJD112RLG (1.75 W) and NJVMJD112T4G (20 W)?

A: The maximum power dissipation rating indicates the thermal capability of the device package under specified conditions. Both parts use identical DPAK packaging and maintain the same electrical performance parameters. The higher power rating of NJVMJD112T4G provides additional thermal margin in applications approaching power dissipation limits, but does not alter switching speed, current gain, or voltage ratings.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All identified substitute parts—NJVMJD112G, NJVMJD112T4G, and MJD112T4—carry RoHS3 compliance certification identical to the MJD112RLG. All parts also maintain Moisture Sensitivity Level 1 (Unlimited) and REACH Unaffected status.

Q: What packaging formats are available for MJD112 series Darlington transistors?

A: Three packaging formats are available: Cut Tape (CT) & Digi-Reel (MJD112RLG and MJD112T4), Tube (NJVMJD112G), and Tape & Reel (NJVMJD112T4G). All formats contain the same DPAK surface mount package and are suitable for different assembly and inventory management requirements.

Q: Can MJD112T4 from STMicroelectronics replace onsemi MJD112RLG in production?

A: Yes. MJD112T4 maintains full electrical equivalence across all critical parameters including collector current, breakdown voltage, current gain, and operating temperature range. Cross-manufacturer substitution is supported by identical electrical specifications and DPAK packaging. Qualification procedures should follow standard component change management protocols.

Q: Are there any differences in the base product numbers among these parts?

A: The base product numbers differ: MJD112RLG and MJD112T4 share base number MJD112, while NJVMJD112G and NJVMJD112T4G share base number NJVMJD112. These designations reflect manufacturer and packaging format variations but do not indicate functional differences in the Darlington transistor core specifications.

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