MJD112-001 Equivalent & Substitute Parts

Part Overview

The MJD112-001 is a Bipolar (BJT) Transistor NPN - Darlington configuration rated for 100 V collector-emitter breakdown voltage and 2 A maximum collector current. This component is designed for Through Hole mounting in the TO-251-3 (I-PAK) package format. The MJD112-001 is classified as Obsolete, necessitating identification of active equivalent parts to maintain design continuity and ensure supply chain availability for new production and repair applications.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN - Darlington	—
Current - Collector (Ic) (Max)	2	A
Voltage - Collector Emitter Breakdown (Max)	100	V
Vce Saturation (Max) @ Ib, Ic	3V @ 40mA, 4A	—
Current - Collector Cutoff (Max)	20	µA
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 2A, 3V	—
Power - Max	1.75	W
Frequency - Transition	25	MHz
Operating Temperature Range	-65 to 150	°C (TJ)
Mounting Type	Through Hole	—
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA	—

Substitute Part Grouping Explanation

Substitution of the MJD112-001 is determined by electrical and mechanical parameter equivalence. The following criteria establish direct substitutability:

Electrical Parameters (Required Match):

Transistor Type: NPN - Darlington configuration
Maximum Collector Current (Ic): 2 A
Maximum Collector-Emitter Breakdown Voltage: 100 V
Vce Saturation characteristics: 3V @ 40mA, 4A
Maximum Collector Cutoff Current: 20 µA
DC Current Gain (hFE): 1000 minimum @ 2A, 3V
Maximum Power Dissipation: 1.75 W
Transition Frequency: 25 MHz
Operating Temperature Range: -65°C to 150°C

Mechanical Parameters (Required Match):

Mounting Type: Through Hole
Package Format: TO-251-3 (I-PAK)

The MJD112-1G meets all specified electrical and mechanical parameters and is classified as an Active product, providing supply continuity for the obsolete MJD112-001.

Parameter Comparison

Parameter	MJD112-001	MJD112-1G	Match
Transistor Type	NPN - Darlington	NPN - Darlington	✓
Current - Collector (Ic) (Max)	2 A	2 A	✓
Voltage - Collector Emitter Breakdown (Max)	100 V	100 V	✓
Vce Saturation (Max) @ Ib, Ic	3V @ 40mA, 4A	3V @ 40mA, 4A	✓
Current - Collector Cutoff (Max)	20 µA	20 µA	✓
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 2A, 3V	1000 @ 2A, 3V	✓
Power - Max	1.75 W	1.75 W	✓
Frequency - Transition	25 MHz	25 MHz	✓
Operating Temperature Range	-65 to 150°C (TJ)	-65 to 150°C (TJ)	✓
Mounting Type	Through Hole	Through Hole	✓
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA	TO-251-3 Short Leads, IPak, TO-251AA	✓
Product Status	Obsolete	Active	—
RoHS Status	RoHS non-compliant	ROHS3 Compliant	—

Engineering Selection Recommendations

The MJD112-1G is the direct equivalent substitute for the MJD112-001. All electrical parameters, mechanical specifications, and package configurations are identical. The MJD112-1G is classified as an Active product with current manufacturing status, ensuring supply availability and long-term component sourcing.

The MJD112-1G carries ROHS3 compliance certification, whereas the MJD112-001 is RoHS non-compliant. This distinction is significant for applications subject to RoHS regulatory requirements. Both parts maintain REACH Unaffected status and EAR99 export classification.

Selection of the MJD112-1G for new designs and production applications eliminates obsolescence risk while maintaining full electrical and mechanical compatibility with existing circuit designs specified for the MJD112-001.

Frequently Asked Questions (FAQ)

Q: Can the MJD112-1G be used as a direct replacement for the MJD112-001 in existing circuit designs?

A: Yes. The MJD112-1G is electrically and mechanically identical to the MJD112-001. All electrical parameters, including collector current rating, breakdown voltage, saturation characteristics, current gain, power dissipation, and frequency response are equivalent. The TO-251-3 (I-PAK) package format and Through Hole mounting type are identical, enabling direct PCB compatibility without design modification.

Q: What is the primary reason for substituting the MJD112-001?

A: The MJD112-001 is classified as Obsolete. The MJD112-1G is an Active product with current manufacturing availability, providing supply continuity and eliminating component sourcing risk for production and repair applications.

Q: Are there packaging differences between the MJD112-001 and MJD112-1G?

A: Both parts use the TO-251-3 (I-PAK) package with short leads. The MJD112-001 is supplied in standard packaging, while the MJD112-1G is supplied in Tube packaging. This difference does not affect electrical performance or PCB mounting compatibility.

Q: Does the MJD112-1G meet RoHS compliance requirements?

A: Yes. The MJD112-1G is ROHS3 Compliant. The MJD112-001 is RoHS non-compliant. For applications requiring RoHS compliance, the MJD112-1G is the appropriate selection.

Q: Are the thermal and operating temperature specifications identical?

A: Yes. Both the MJD112-001 and MJD112-1G operate across the same temperature range of -65°C to 150°C (junction temperature). Thermal performance and power dissipation characteristics are equivalent.

Q: What are the key electrical parameters that define substitutability for this transistor?

A: Substitutability is determined by matching the following parameters: NPN - Darlington transistor type, 2 A maximum collector current, 100 V collector-emitter breakdown voltage, 3V saturation voltage at specified bias conditions, 20 µA maximum collector cutoff current, 1000 minimum DC current gain, 1.75 W maximum power dissipation, and 25 MHz transition frequency. The MJD112-1G matches all these specifications.

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