MJ6503 TIN/LEAD Equivalent & Substitute Parts

Part Overview

The MJ6503 TIN/LEAD is a Bipolar (BJT) Transistor with PNP configuration manufactured by Central Semiconductor Corp. This component is rated for 400 V collector-emitter breakdown voltage and 8 A maximum collector current, with a maximum power dissipation of 125 W. The device is housed in a TO-3 (TO-204AA) through-hole package and operates across a temperature range of -65°C to 200°C.

The MJ6503 TIN/LEAD is classified as obsolete. Locating equivalent or substitute components is necessary to support ongoing maintenance, repair, and production requirements for legacy systems and equipment utilizing this transistor.

Substiute Parts

MJ6503 TIN/LEAD

Central Semiconductor CorpIn Stock: 1234MJ6503 TIN/LEAD Datasheet

Current PartRFQ

2N6673

Microchip TechnologyIn Stock: 8902N6673 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the MJ6503 TIN/LEAD is determined by electrical and mechanical compatibility across the following critical parameters:

• Transistor Type: PNP configuration is mandatory for functional equivalence
• Voltage - Collector Emitter Breakdown (Max): Minimum 400 V required
• Current - Collector (Ic) (Max): Minimum 8 A required
• Power - Max: Minimum 125 W required
• Package / Case: TO-3 through-hole mounting required for mechanical compatibility
• Operating Temperature Range: Must support -65°C to 200°C or equivalent operational envelope

The 2N6673 is identified as a substitute part based on its PNP Bipolar (BJT) Transistor classification and compatibility with the electrical requirements of the MJ6503 TIN/LEAD application.

Parameter Comparison

Engineering Selection Recommendations

The 2N6673 is an active product manufactured by Microchip Technology, providing ongoing availability and supply chain continuity compared to the obsolete MJ6503 TIN/LEAD. Both components share identical ECCN (EAR99) and HTSUS (8541.29.0095) classifications, ensuring consistent export and tariff treatment.

The MJ6503 TIN/LEAD is ROHS3 Compliant, while the 2N6673 is RoHS non-compliant. This compliance difference must be evaluated against specific application requirements and regulatory mandates governing the end-use system.

Both components maintain REACH Unaffected status, indicating no restrictions under REACH regulations.

Selection between these components should prioritize application-specific requirements regarding RoHS compliance, supply chain availability, and long-term product lifecycle support.

Frequently Asked Questions (FAQ)

Q: Can the 2N6673 directly replace the MJ6503 TIN/LEAD in all applications?

A: Both components are PNP Bipolar (BJT) Transistors with equivalent electrical classifications. Substitution is valid where electrical parameters and package compatibility align with circuit requirements. Verify RoHS compliance requirements for your specific application, as the MJ6503 TIN/LEAD is ROHS3 Compliant while the 2N6673 is RoHS non-compliant.

Q: What is the significance of the TO-3 package for substitution?

A: The TO-3 (TO-204AA) package is a through-hole mounting configuration. Substitute components must utilize identical or mechanically compatible packaging to ensure proper fit within existing PCB layouts and thermal management designs.

Q: Why is the MJ6503 TIN/LEAD classified as obsolete?

A: Obsolete status indicates the component is no longer manufactured or actively supported by the original manufacturer. This classification necessitates identification of active alternative components for continued system support and maintenance.

Q: Are there compliance differences between the MJ6503 TIN/LEAD and 2N6673?

A: Yes. The MJ6503 TIN/LEAD is ROHS3 Compliant, while the 2N6673 is RoHS non-compliant. Both components are REACH Unaffected and share identical ECCN and HTSUS classifications. Compliance selection depends on application regulatory requirements.

Q: What electrical parameters must match for substitution?

A: Critical parameters include transistor type (PNP), voltage rating (minimum 400 V collector-emitter breakdown), current rating (minimum 8 A collector current), and power dissipation (minimum 125 W). Operating temperature range and package configuration must also be compatible with the original application.