MJ11030G Equivalent & Substitute Parts

Part Overview

The MJ11030G is an NPN Darlington bipolar junction transistor manufactured by onsemi, designed for high-current switching and amplification applications. This device features a maximum collector current of 50 A, collector-emitter breakdown voltage of 90 V, and maximum power dissipation of 300 W in a TO-204 (TO-3) through-hole package. The MJ11030G is classified as obsolete, making identification of suitable substitute components necessary for ongoing design support and production continuity.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN - Darlington	—
Current - Collector (Ic) (Max)	50	A
Voltage - Collector Emitter Breakdown (Max)	90	V
Vce Saturation (Max) @ Ib, Ic	3.5 V @ 500 mA, 50 A	V
Current - Collector Cutoff (Max)	2	mA
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 25 A, 5 V	—
Power - Max	300	W
Operating Temperature	-55 to 200	°C (TJ)
Package / Case	TO-204AE	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution of the MJ11030G is determined by electrical and mechanical compatibility within the NPN Darlington transistor category. The primary substitution criteria are:

Electrical Parameters:

Transistor topology (NPN - Darlington configuration)
Collector current rating (50 A maximum)
Saturation voltage characteristics (3.5 V @ 500 mA, 50 A)
DC current gain (1000 minimum @ 25 A, 5 V)
Collector cutoff current (2 mA maximum)
Power dissipation capability (300 W)
Operating temperature range (-55°C to 200°C)

Mechanical Parameters:

Package type (TO-204AE / TO-3 through-hole)
Pin configuration compatibility

The MJ11032G qualifies as a substitute because it maintains identical electrical performance in collector current, saturation voltage, current gain, cutoff current, power rating, and operating temperature range. The MJ11032G features an elevated collector-emitter breakdown voltage of 120 V, which provides enhanced voltage margin while remaining compatible with applications designed for the 90 V MJ11030G.

Parameter Comparison

Parameter	MJ11030G	MJ11032G	Unit
Manufacturer	onsemi	onsemi	—
Transistor Type	NPN - Darlington	NPN - Darlington	—
Current - Collector (Ic) (Max)	50	50	A
Voltage - Collector Emitter Breakdown (Max)	90	120	V
Vce Saturation (Max) @ Ib, Ic	3.5 @ 500 mA, 50 A	3.5 @ 500 mA, 50 A	V
Current - Collector Cutoff (Max)	2	2	mA
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 25 A, 5 V	1000 @ 25 A, 5 V	—
Power - Max	300	300	W
Operating Temperature	-55 to 200	-55 to 200	°C (TJ)
Package / Case	TO-204AE	TO-204AE	—
Mounting Type	Through Hole	Through Hole	—
Product Status	Obsolete	Active	—

Engineering Selection Recommendations

The MJ11032G is the direct substitute for the obsolete MJ11030G. Both devices are manufactured by onsemi and share identical electrical specifications for collector current, saturation voltage, current gain, cutoff current, power dissipation, and operating temperature range. The MJ11032G provides a higher collector-emitter breakdown voltage rating of 120 V compared to the MJ11030G's 90 V specification, offering improved voltage margin in applications without requiring circuit redesign.

The MJ11032G holds Active product status, ensuring ongoing availability and manufacturing support. The MJ11032G is RoHS3 compliant, meeting current environmental and regulatory requirements. Both devices maintain REACH Unaffected status and EAR99 export classification. The identical TO-204AE package and through-hole mounting configuration enable direct mechanical and electrical substitution without PCB layout modifications.

Frequently Asked Questions (FAQ)

Q: Can the MJ11032G directly replace the MJ11030G in existing designs?

A: Yes. The MJ11032G maintains identical electrical performance across all critical parameters: collector current (50 A), saturation voltage (3.5 V @ 500 mA, 50 A), DC current gain (1000 @ 25 A, 5 V), power dissipation (300 W), and operating temperature range (-55°C to 200°C). The package and pin configuration are identical (TO-204AE through-hole). The elevated breakdown voltage (120 V vs. 90 V) provides additional voltage margin without affecting circuit operation.

Q: What is the primary difference between MJ11030G and MJ11032G?

A: The collector-emitter breakdown voltage differs: MJ11030G is rated at 90 V maximum, while MJ11032G is rated at 120 V maximum. All other electrical specifications are identical. The MJ11032G is Active product status, whereas the MJ11030G is Obsolete.

Q: Are there packaging differences between these devices?

A: No. Both the MJ11030G and MJ11032G use the TO-204AE package with through-hole mounting. No PCB layout or mechanical modifications are required for substitution.

Q: Does the MJ11032G meet current compliance standards?

A: Yes. The MJ11032G is RoHS3 compliant and maintains REACH Unaffected status. The MJ11030G does not specify RoHS compliance due to its obsolete status.

Q: What applications are suitable for the MJ11032G as a replacement?

A: The MJ11032G is suitable for any application originally designed for the MJ11030G operating at or below 90 V collector-emitter voltage. Applications requiring higher voltage margins benefit from the 120 V rating of the MJ11032G. Typical applications include high-current switching, audio amplification, and power control circuits.

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