MHT1004NR3 Equivalent & Substitute Parts

Part Overview

The MHT1004NR3 is an RF MOSFET LDMOS device manufactured by NXP USA Inc., designed for RF applications operating at 2.45 GHz with an output power rating of 280W. This component features a 32V test voltage rating and 15.2 dB gain in a surface mount OM-780-2 package configuration.

The MHT1004NR3 is classified as obsolete. Locating equivalent or substitute components is necessary to support ongoing system maintenance, repair, and production continuity for applications utilizing this RF MOSFET technology.

Substiute Parts

MHT1004NR3
NXP USA Inc.In Stock: 892MHT1004NR3 Datasheet
MHT1004NR3
Current Part
MRF24G300HSR5
NXP USA Inc.In Stock: 988MRF24G300HSR5 Datasheet
MRF24G300HSR5
MFR Recommended

Key Parameters

Parameter Value
Manufacturer Part Number MHT1004NR3
Manufacturer NXP USA Inc.
Category Transistors, FETs, MOSFETs
Technology LDMOS
Frequency 2.45 GHz
Gain 15.2 dB
Voltage - Test 32 V
Voltage - Rated 65 V
Current - Test 100 mA
Power - Output 280 W
Mounting Type Surface Mount
Package / Case OM-780-2
Product Status Obsolete
RoHS Status ROHS3 Compliant
MSL Rating 3 (168 Hours)

Substitute Part Grouping Explanation

Substitution of the MHT1004NR3 is determined by alignment of the following critical parameters:

Frequency Compatibility: The substitute part must operate within or overlap the 2.45 GHz operating frequency band of the original component.

Gain Performance: The substitute part must deliver comparable RF gain (15.2 dB baseline) to maintain circuit performance specifications.

Power Output Rating: The substitute part must support the 280W output power requirement or higher to ensure adequate power handling capability.

Voltage Ratings: The substitute part must accommodate the 32V test voltage and 65V rated voltage specifications of the original design.

Mounting and Package: The substitute part must be surface mount compatible to support existing PCB layouts and assembly processes.

Compliance and Status: The substitute part must maintain ROHS3 compliance and be available in current or recent production status to ensure supply chain viability.

The MRF24G300HSR5 meets these substitution criteria through equivalent frequency operation, comparable gain specification, higher power output capability, and superior voltage rating with current availability.

Parameter Comparison

Parameter MHT1004NR3 MRF24G300HSR5
Manufacturer NXP USA Inc. NXP USA Inc.
Category Transistors, FETs, MOSFETs Transistors, FETs, MOSFETs
Technology LDMOS GaN
Frequency 2.45 GHz 2.4 GHz ~ 2.5 GHz
Gain 15.2 dB 15.3 dB
Voltage - Test 32 V 48 V
Voltage - Rated 65 V 125 V
Power - Output 280 W 300 W
Mounting Type Surface Mount Surface Mount
Package / Case OM-780-2 NI-780S-4L
Product Status Obsolete Obsolete
RoHS Status ROHS3 Compliant ROHS3 Compliant
MSL Rating 3 (168 Hours) 1 (Unlimited)

Engineering Selection Recommendations

Substitution Viability: The MRF24G300HSR5 functions as a direct substitute for the MHT1004NR3 based on overlapping frequency operation (2.4–2.5 GHz encompasses the 2.45 GHz specification), equivalent gain performance (15.3 dB versus 15.2 dB), and superior power output capability (300W versus 280W).

Voltage Considerations: The MRF24G300HSR5 operates at higher voltage ratings (48V test, 125V rated) compared to the MHT1004NR3 (32V test, 65V rated). This characteristic provides enhanced voltage margin and improved reliability in applications where the original voltage specifications are met.

Technology Transition: The MRF24G300HSR5 employs GaN (Gallium Nitride) technology, whereas the MHT1004NR3 uses LDMOS technology. Both technologies are established RF MOSFET platforms suitable for 2.4–2.5 GHz applications. GaN technology offers improved efficiency characteristics at comparable performance levels.

Package Compatibility: The MRF24G300HSR5 uses the NI-780S-4L package, which differs from the OM-780-2 package of the MHT1004NR3. PCB layout modifications are required to accommodate the different package footprint.

Compliance Status: Both components maintain ROHS3 compliance and REACH unaffected status, ensuring regulatory alignment for current production environments. The MRF24G300HSR5 features superior moisture sensitivity rating (MSL 1 versus MSL 3), reducing handling and storage constraints.

Frequently Asked Questions (FAQ)

Q: Can the MRF24G300HSR5 directly replace the MHT1004NR3 without circuit modifications?

A: The MRF24G300HSR5 is functionally equivalent in RF performance (frequency, gain, power output) but requires PCB layout modifications due to different package geometry (NI-780S-4L versus OM-780-2). Circuit-level modifications are not required if the package footprint is accommodated.

Q: What are the key performance differences between these two parts?

A: The MRF24G300HSR5 provides 20W additional output power (300W versus 280W), 0.1 dB higher gain (15.3 dB versus 15.2 dB), and operates across a broader frequency range (2.4–2.5 GHz versus 2.45 GHz). Voltage ratings are higher on the MRF24G300HSR5 (48V test, 125V rated versus 32V test, 65V rated).

Q: Are there package compatibility concerns?

A: Yes. The MHT1004NR3 uses OM-780-2 packaging while the MRF24G300HSR5 uses NI-780S-4L packaging. These packages have different footprints and pin configurations. PCB redesign is necessary to accommodate the substitute part.

Q: Do both parts meet current compliance requirements?

A: Both the MHT1004NR3 and MRF24G300HSR5 are ROHS3 compliant and REACH unaffected. Both are classified as obsolete products. The MRF24G300HSR5 features improved moisture sensitivity handling (MSL 1 unlimited versus MSL 3 at 168 hours).

Q: What is the frequency overlap between these components?

A: The MHT1004NR3 operates at 2.45 GHz. The MRF24G300HSR5 operates across 2.4–2.5 GHz, which fully encompasses the 2.45 GHz specification of the original part, ensuring frequency compatibility.

Q: Are both parts from the same manufacturer?

A: Yes. Both the MHT1004NR3 and MRF24G300HSR5 are manufactured by NXP USA Inc., ensuring consistent quality standards and technical support from a single source.

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