MHT1004GNR3 Equivalent & Substitute Parts

Part Overview

The MHT1004GNR3 is an RF MOSFET LDMOS device manufactured by NXP USA Inc., designed for RF applications at 2.45 GHz with 280W output power and 15.2 dB gain. This component operates at 32V test voltage with a rated voltage of 65V and is housed in an OM-780-2G Gull package for chassis mount applications.

The MHT1004GNR3 is classified as obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support legacy system maintenance and production requirements.

Substiute Parts

MHT1004GNR3

NXP USA Inc.In Stock: 802MHT1004GNR3 Datasheet

Current PartRFQ

MRF24G300HSR5

NXP USA Inc.In Stock: 988MRF24G300HSR5 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the MHT1004GNR3 is determined by alignment of the following critical parameters:

Frequency Compatibility: The substitute part must operate within or overlap the 2.45 GHz frequency band to maintain RF circuit performance in the intended application.

Power Output Capability: The substitute must deliver equal or greater output power (280W minimum) to ensure adequate signal amplification without performance degradation.

Gain Performance: Gain values must be comparable (15.2 dB reference) to maintain circuit gain margins and system-level performance specifications.

Voltage Ratings: Both test voltage (32V) and rated voltage (65V) establish the operating envelope. Substitute parts with higher voltage ratings provide design margin and operational flexibility.

Package and Mounting: The OM-780-2G Gull package with chassis mount configuration defines the physical and thermal interface. Substitutes with equivalent or compatible packages ensure mechanical fit and thermal management.

Compliance and Status: RoHS3 compliance and REACH unaffected status ensure regulatory alignment for current manufacturing and distribution requirements.

The MRF24G300HSR5 qualifies as a substitute based on overlapping frequency range (2.4–2.5 GHz), comparable gain (15.3 dB), higher power output (300W), and superior voltage rating (125V rated). The GaN technology provides enhanced efficiency characteristics while maintaining RF performance parameters within acceptable engineering tolerances.

Parameter Comparison

Engineering Selection Recommendations

Regulatory Compliance: Both the MHT1004GNR3 and MRF24G300HSR5 maintain ROHS3 compliance and REACH unaffected status, satisfying current environmental and hazardous substance regulations for manufacturing and distribution.

Product Status Consideration: Both parts are classified as obsolete. Selection between these parts should prioritize inventory availability and supply chain reliability. The MRF24G300HSR5 currently maintains higher inventory levels (922 Pcs) compared to the MHT1004GNR3 (752 Pcs), supporting long-term procurement planning.

Technology Transition: The MRF24G300HSR5 employs GaN technology versus the LDMOS technology of the MHT1004GNR3. This transition offers enhanced power efficiency and thermal performance characteristics while maintaining RF parameter compatibility within the specified frequency band.

Voltage and Power Margin: The MRF24G300HSR5 provides elevated voltage ratings (125V rated versus 65V) and increased power output (300W versus 280W), establishing additional design margin for applications requiring operational headroom or future performance scaling.

Package Compatibility: The MRF24G300HSR5 uses the NI-780S-4L package with surface mount configuration, differing from the OM-780-2G chassis mount package of the MHT1004GNR3. Circuit board layout and thermal management design modifications are required for implementation.

Frequently Asked Questions (FAQ)

Q: Can the MRF24G300HSR5 directly replace the MHT1004GNR3 without circuit modifications?

A: Direct pin-for-pin replacement is not applicable due to different package types (OM-780-2G Gull chassis mount versus NI-780S-4L surface mount). Circuit board layout, mounting structure, and thermal interface design require engineering review and modification.

Q: What frequency range compatibility exists between these parts?

A: The MHT1004GNR3 operates at 2.45 GHz. The MRF24G300HSR5 operates across 2.4–2.5 GHz, providing full coverage of the original frequency specification with extended bandwidth capability.

Q: Are there electrical performance differences that affect circuit design?

A: The MRF24G300HSR5 operates at higher test voltage (48V versus 32V) and rated voltage (125V versus 65V). Bias network and impedance matching circuits may require adjustment to accommodate the different voltage operating point. Gain values are comparable (15.3 dB versus 15.2 dB), supporting equivalent RF performance.

Q: What is the significance of the technology difference between LDMOS and GaN?

A: LDMOS and GaN are distinct semiconductor technologies. The MRF24G300HSR5 GaN technology provides improved power efficiency and thermal characteristics. However, this represents a technology transition requiring validation of thermal management, bias stability, and circuit performance in the specific application environment.

Q: How do the moisture sensitivity levels affect handling and storage?

A: The MHT1004GNR3 has MSL rating 3 (168 hours), requiring controlled humidity storage and limited floor life after packaging opening. The MRF24G300HSR5 has MSL rating 1 (unlimited), providing superior moisture tolerance and extended handling flexibility without time-dependent storage constraints.

Q: Are both parts suitable for new design implementations?

A: Both parts are classified as obsolete. Neither part is recommended for new design implementations. These substitution relationships support legacy system maintenance, repair, and production continuation only. New designs should evaluate current-generation RF MOSFET offerings from active product lines.

Q: What compliance certifications apply to both parts?

A: Both the MHT1004GNR3 and MRF24G300HSR5 maintain ROHS3 compliance, REACH unaffected status, and EAR99 export classification. These certifications satisfy current regulatory requirements for manufacturing, distribution, and export in applicable jurisdictions.