MCT2ESD Equivalent & Substitute Parts

Part Overview

The MCT2ESD is an optoisolator transistor with base output manufactured by onsemi, designed for high-voltage isolation applications. This component features a single channel with 5300Vrms isolation rating and transistor output configuration in a 6-SMD surface mount package. The part is currently classified as obsolete, making identification of equivalent and substitute parts essential for ongoing design support and procurement continuity.

Substiute Parts

MCT2ESD
onsemiIn Stock: 12748MCT2ESD Datasheet
MCT2ESD
Current Part
MCT2ESM
Fairchild SemiconductorIn Stock: 5374MCT2ESM Datasheet
MCT2ESM
Similar
MCT2ESMT&R
Isocom Components 2004 LTDIn Stock: 817MCT2ESMT&R Datasheet
MCT2ESMT&R
Similar

Key Parameters

Parameter Value
Manufacturer Part Number MCT2ESD
Manufacturer onsemi
Category Optoisolators
Product Status Obsolete
Number of Channels 1
Voltage - Isolation 5300Vrms
Current Transfer Ratio (Min) 20% @ 10mA
Output Type Transistor with Base
Voltage - Output (Max) 30V
Current - Output / Channel 50mA
Vce Saturation (Max) 400mV
Operating Temperature -55°C ~ 100°C
Mounting Type Surface Mount
Package / Case 6-SMD, Gull Wing
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitute parts for the MCT2ESD are identified based on the following critical parameters that define functional equivalence:

  • Single channel optoisolator configuration
  • Transistor with base output topology
  • 6-SMD surface mount package with gull wing leads
  • Maximum output voltage of 30V
  • Vce saturation maximum of 400mV
  • Minimum current transfer ratio of 20% @ 10mA
  • DC input type

The MCT2ESM and MCT2ESMT&R are listed as direct substitutes. While these parts maintain the core functional characteristics and package compatibility, variations exist in isolation voltage ratings, switching times, and operating temperature ranges. These differences must be evaluated against specific application requirements.

Parameter Comparison

Parameter MCT2ESD (Main) MCT2ESM MCT2ESMT&R
Manufacturer onsemi Fairchild Semiconductor Isocom Components 2004 LTD
Product Status Obsolete Active Active
Number of Channels 1 1 1
Voltage - Isolation 5300Vrms 7500Vpk 7.5Vpk
Current Transfer Ratio (Min) 20% @ 10mA 20% @ 10mA 50% @ 10mA
Turn On / Turn Off Time (Typ) 1.1µs, 50µs 2µs, 2µs 3µs, 3µs
Output Type Transistor with Base Transistor with Base Transistor with Base
Voltage - Output (Max) 30V 30V 30V
Current - Output / Channel 50mA 50mA Not specified
Voltage - Forward (Vf) (Typ) 1.25V 1.25V 1.2V
Current - DC Forward (If) (Max) 100mA 60mA 60mA
Vce Saturation (Max) 400mV 400mV 400mV
Operating Temperature -55°C ~ 100°C -40°C ~ 100°C -55°C ~ 100°C
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 6-SMD, Gull Wing 6-SMD, Gull Wing 6-SMD, Gull Wing
Packaging Bulk Bulk Tape & Reel (TR)
RoHS Status Not specified Not specified ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) Not specified 1 (Unlimited)

Engineering Selection Recommendations

The MCT2ESD is obsolete and requires substitution for new procurement. Both MCT2ESM and MCT2ESMT&R are active products with compatible package and functional characteristics.

The MCT2ESM (Fairchild Semiconductor) maintains electrical compatibility with the MCT2ESD across all critical parameters including output voltage, saturation voltage, and current transfer ratio. This part offers higher isolation voltage (7500Vpk versus 5300Vrms) and faster switching times. The operating temperature range is -40°C to 100°C, which is narrower than the MCT2ESD by 15°C at the lower end.

The MCT2ESMT&R (Isocom Components 2004 LTD) is supplied in Tape & Reel packaging and carries ROHS3 compliance certification. This part features a higher minimum current transfer ratio (50% @ 10mA) and identical operating temperature range to the MCT2ESD (-55°C to 100°C). However, the isolation voltage specification (7.5Vpk) differs significantly from the main part and requires application-level verification.

Selection between MCT2ESM and MCT2ESMT&R depends on packaging requirements, temperature range constraints, and regulatory compliance needs. Both parts are currently in active production status.

Frequently Asked Questions (FAQ)

Q: Can MCT2ESM directly replace MCT2ESD in all applications?

A: MCT2ESM shares the same package, output configuration, and critical electrical parameters. The primary difference is the operating temperature minimum of -40°C versus -55°C for the MCT2ESD. Applications requiring operation below -40°C require evaluation of alternative substitutes.

Q: What is the significance of the isolation voltage difference between MCT2ESD and MCT2ESMT&R?

A: The MCT2ESD specifies 5300Vrms isolation, while MCT2ESMT&R specifies 7.5Vpk. These represent different measurement standards and magnitudes. Application circuits must be evaluated to determine if the isolation voltage of the substitute part meets system requirements.

Q: Does packaging format affect electrical performance?

A: No. The Tape & Reel (TR) packaging of MCT2ESMT&R versus bulk packaging of MCT2ESM and MCT2ESM does not affect electrical characteristics. Packaging format is a procurement and assembly consideration only.

Q: Are there compliance differences between the substitute parts?

A: MCT2ESMT&R carries ROHS3 compliance certification. MCT2ESM compliance status is not specified in available data. Applications subject to RoHS requirements should specify MCT2ESMT&R or verify MCT2ESM compliance documentation with the manufacturer.

Q: How do switching times compare between the three parts?

A: MCT2ESD specifies turn-on/turn-off times of 1.1µs and 50µs. MCT2ESM specifies 2µs and 2µs. MCT2ESMT&R specifies 3µs and 3µs. Applications with timing-critical circuits must evaluate these differences against system specifications.

Q: What is the current transfer ratio and why does it vary?

A: Current transfer ratio (CTR) defines the ratio of output current to input current. MCT2ESD and MCT2ESM specify minimum 20% @ 10mA, while MCT2ESMT&R specifies 50% @ 10mA. Higher CTR indicates more efficient signal transfer and may affect circuit design parameters.

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