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MCT2201 Equivalent & Substitute Parts
Part Overview
The MCT2201 is an optoisolator transistor with base output manufactured by onsemi, providing 5300Vrms isolation in a 6-DIP package. This component is classified as obsolete, making equivalent and substitute parts necessary for new designs and ongoing production requirements. The MCT2201 delivers 1-channel isolation with transistor output and base connection, suitable for applications requiring high-voltage galvanic isolation with DC input control.
Substiute Parts
Key Parameters
| Parameter | MCT2201 |
|---|---|
| Manufacturer | onsemi |
| Category | Optoisolators |
| Product Status | Obsolete |
| Number of Channels | 1 |
| Voltage - Isolation | 5300Vrms |
| Current Transfer Ratio (Min) | 100% @ 10mA |
| Output Type | Transistor with Base |
| Voltage - Output (Max) | 30V |
| Current - Output / Channel | 50mA |
| Vce Saturation (Max) | 400mV |
| Operating Temperature | -55°C ~ 100°C |
| Package / Case | 6-DIP (0.300", 7.62mm) |
| Mounting Type | Through Hole |
Substitute Part Grouping Explanation
Substitution for the MCT2201 is determined by the following critical parameters: package type (6-DIP through-hole), output configuration (transistor with base), isolation voltage rating, current transfer ratio, maximum output voltage, maximum output current, and saturation voltage. All substitute parts must maintain the same 6-DIP package and transistor-with-base output topology to ensure mechanical and functional compatibility.
The substitute parts identified are:
- H11AV1M (onsemi): Active product with 4170Vrms isolation, 100-300% CTR range, 70V max output, same 6-DIP package
- 4N25-000E (Broadcom Limited): Active product with 2500Vrms isolation, 20% CTR minimum, 30V max output, same 6-DIP package
Parameter Comparison
| Parameter | MCT2201 | H11AV1M | 4N25-000E |
|---|---|---|---|
| Manufacturer | onsemi | onsemi | Broadcom Limited |
| Product Status | Obsolete | Active | Active |
| Voltage - Isolation | 5300Vrms | 4170Vrms | 2500Vrms |
| Current Transfer Ratio (Min) | 100% @ 10mA | 100% @ 10mA | 20% @ 10mA |
| Current Transfer Ratio (Max) | — | 300% @ 10mA | — |
| Turn On / Turn Off Time (Typ) | 2µs, 2µs | 15µs, 15µs (Max) | — |
| Output Type | Transistor with Base | Transistor with Base | Transistor with Base |
| Voltage - Output (Max) | 30V | 70V | 30V |
| Current - Output / Channel | 50mA | — | 100mA |
| Vce Saturation (Max) | 400mV | 400mV | 500mV |
| Operating Temperature | -55°C ~ 100°C | -40°C ~ 100°C | -55°C ~ 100°C |
| Package / Case | 6-DIP (0.300", 7.62mm) | 6-DIP (0.300", 7.62mm) | 6-DIP (0.300", 7.62mm) |
| Mounting Type | Through Hole | Through Hole | Through Hole |
| RoHS Status | — | ROHS3 Compliant | ROHS3 Compliant |
| REACH Status | REACH Unaffected | REACH Unaffected | REACH Unaffected |
Engineering Selection Recommendations
H11AV1M is the primary substitute for new designs. It is manufactured by onsemi (same supplier as MCT2201), maintains active product status, and provides compatible isolation voltage (4170Vrms), output configuration, and package. The H11AV1M offers superior current transfer ratio range (100-300%) and higher maximum output voltage (70V). The extended turn-on/turn-off time (15µs versus 2µs) must be evaluated against application timing requirements. The H11AV1M is ROHS3 compliant, supporting modern regulatory requirements.
4N25-000E is a secondary substitute suitable for applications with lower isolation voltage requirements (2500Vrms). Manufactured by Broadcom Limited, it is ROHS3 compliant and active. The 4N25-000E provides higher output current capability (100mA) but lower minimum current transfer ratio (20%) and higher saturation voltage (500mV). This part is appropriate only when isolation voltage below 2500Vrms is acceptable.
For applications requiring the full 5300Vrms isolation of the MCT2201, H11AV1M is the only active substitute available. The 4N25-000E does not meet the isolation voltage specification and should be used only in designs where isolation voltage can be reduced.
Frequently Asked Questions (FAQ)
Q: Can H11AV1M directly replace MCT2201 in existing designs?
A: H11AV1M is mechanically and functionally compatible, sharing the same 6-DIP package and transistor-with-base output. However, the reduced isolation voltage (4170Vrms versus 5300Vrms) and extended switching time (15µs versus 2µs) must be evaluated against circuit requirements. Pin-for-pin compatibility exists, but application-level validation is necessary.
Q: What is the key difference between H11AV1M and 4N25-000E?
A: The primary difference is isolation voltage rating. H11AV1M provides 4170Vrms isolation, while 4N25-000E provides only 2500Vrms. Both share the same 6-DIP package and transistor-with-base output. H11AV1M is manufactured by onsemi; 4N25-000E is manufactured by Broadcom Limited. The 4N25-000E offers higher output current (100mA) but lower current transfer ratio minimum (20%).
Q: Is 4N25-000E suitable as a substitute for MCT2201?
A: 4N25-000E is suitable only if the application can operate with 2500Vrms isolation instead of 5300Vrms. The lower isolation voltage represents a significant functional reduction. For applications requiring the full isolation specification of MCT2201, 4N25-000E is not appropriate.
Q: What compliance certifications should I consider?
A: H11AV1M and 4N25-000E are both ROHS3 compliant and REACH unaffected. MCT2201 carries REACH unaffected status but does not specify RoHS compliance due to its obsolete status. For new designs, H11AV1M or 4N25-000E are preferred to meet modern regulatory requirements.
Q: Are there temperature range considerations?
A: MCT2201 and 4N25-000E operate from -55°C to 100°C. H11AV1M operates from -40°C to 100°C. Applications requiring operation below -40°C must use MCT2201 or 4N25-000E. For standard industrial temperature ranges, all three parts are compatible.
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