MCP07N65-BP N-Channel MOSFET 650V 7A Equivalent & Substitute Parts

Part Overview

The MCP07N65-BP is an N-Channel MOSFET manufactured by Micro Commercial Co, rated for 650V drain-to-source voltage with 7A continuous drain current in a Through Hole TO-220AB package. This device is classified as obsolete, making identification of functionally equivalent substitute components necessary for ongoing design support and procurement continuity. The part operates across a temperature range of -55°C to 150°C and complies with RoHS3 and REACH standards.

Substiute Parts

MCP07N65-BP

Micro Commercial CoIn Stock: 863MCP07N65-BP Datasheet

Current PartRFQ

STP8NK80Z

STMicroelectronicsIn Stock: 17086STP8NK80Z Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the MCP07N65-BP is determined by electrical and mechanical compatibility within the N-Channel MOSFET category. The primary substitution criteria are:

Electrical Compatibility Requirements:

• Drain-to-Source Voltage (Vdss) must equal or exceed 650V
• Continuous Drain Current (Id) must meet or exceed 7A
• On-State Resistance (Rds On) must not significantly degrade circuit performance
• Gate Threshold Voltage (Vgs(th)) must remain within acceptable switching parameters
• Operating temperature range must encompass -55°C to 150°C

Mechanical Compatibility Requirements:

• Package type must be TO-220-3 (Through Hole)
• Pin configuration must match TO-220AB standard

Regulatory Compliance:

• RoHS3 compliance required
• REACH compliance required

The STP8NK80Z from STMicroelectronics meets these substitution criteria with a higher voltage rating (800V) and comparable current handling (6.2A), making it suitable for applications where the MCP07N65-BP is no longer available.

Parameter Comparison

Engineering Selection Recommendations

The STP8NK80Z is an active product from STMicroelectronics and represents a suitable substitute for the obsolete MCP07N65-BP. Both devices maintain identical operating temperature ranges (-55°C to 150°C) and comply with RoHS3 and REACH regulatory requirements.

Electrical Considerations: The STP8NK80Z provides a higher voltage rating (800V versus 650V), which offers additional design margin in high-voltage applications. The continuous drain current of the STP8NK80Z (6.2A) is slightly lower than the MCP07N65-BP (7A), but remains within acceptable tolerance for most applications. The on-state resistance values are comparable (1.5Ohm versus 1.4Ohm), indicating similar conduction losses.

Mechanical Compatibility: Both devices utilize the TO-220-3 package with Through Hole mounting, ensuring direct PCB footprint compatibility without layout modifications.

Regulatory Compliance: Both parts maintain identical compliance certifications (RoHS3 and REACH), eliminating regulatory substitution barriers.

Product Availability: The STP8NK80Z is currently in active production with substantial inventory availability (17,012 pieces), whereas the MCP07N65-BP is obsolete with limited remaining stock (779 pieces).

Frequently Asked Questions (FAQ)

Q: Can the STP8NK80Z directly replace the MCP07N65-BP in existing designs?

A: Yes, the STP8NK80Z is mechanically and electrically compatible for direct substitution. Both devices share identical TO-220-3 package geometry, gate threshold voltage (4.5V), maximum gate voltage (±30V), and operating temperature range (-55°C to 150°C). The higher voltage rating of the STP8NK80Z (800V) provides additional design margin without requiring circuit modifications.

Q: What are the key electrical differences between these two MOSFETs?

A: The primary differences are: (1) Drain-to-Source Voltage: STP8NK80Z rated at 800V versus MCP07N65-BP at 650V; (2) Continuous Drain Current: STP8NK80Z at 6.2A versus MCP07N65-BP at 7A; (3) Gate Charge: STP8NK80Z at 46nC versus MCP07N65-BP at 26nC; (4) Input Capacitance: STP8NK80Z at 1320pF versus MCP07N65-BP at 1600pF. On-state resistance values are comparable (1.5Ohm versus 1.4Ohm).

Q: Are there any thermal or power dissipation concerns with substitution?

A: The STP8NK80Z is specified with a maximum power dissipation of 140W at Tc, whereas the MCP07N65-BP does not provide a power dissipation specification in the available data. Both devices operate across the same temperature range (-55°C to 150°C). Thermal design should account for the slightly higher on-state resistance of the STP8NK80Z (1.5Ohm versus 1.4Ohm).

Q: Do both parts require identical gate drive circuits?

A: Yes. Both devices have identical gate threshold voltage specifications (4.5V @ 250µA for MCP07N65-BP and 4.5V @ 100µA for STP8NK80Z) and maximum gate voltage ratings (±30V). Gate drive circuits designed for the MCP07N65-BP are directly compatible with the STP8NK80Z. The higher gate charge of the STP8NK80Z (46nC versus 26nC) may require slightly longer switching times but does not necessitate circuit redesign.

Q: What is the impact of the higher gate charge on switching performance?

A: The STP8NK80Z exhibits higher gate charge (46nC versus 26nC), which increases the time required to charge and discharge the gate capacitance during switching transitions. This results in slightly longer switching times and marginally increased switching losses. For most applications operating at standard switching frequencies, this difference is negligible. High-frequency switching applications should evaluate the specific switching frequency and gate drive current capability to confirm acceptable performance.

Q: Are both parts compliant with current regulatory standards?

A: Yes. Both the MCP07N65-BP and STP8NK80Z are RoHS3 compliant and REACH unaffected, meeting current regulatory requirements for electronic component procurement and use.

Q: What is the packaging difference between these devices?

A: Both devices are supplied in TO-220-3 Through Hole packages. The MCP07N65-BP is supplied in standard packaging, while the STP8NK80Z is supplied in Tube packaging. This difference affects only the procurement and handling process; the actual component package and PCB footprint are identical.