MCH6601-TL-E Equivalent & Substitute Parts

Part Overview

The MCH6601-TL-E is a dual P-channel MOSFET array manufactured by onsemi, designed for surface mount applications requiring logic level gate control at 30V operation. This component is classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design support and procurement continuity. The part operates at a maximum continuous drain current of 200mA with an 800mW power dissipation rating in a compact 6-MCPH surface mount package.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	30	V
Current - Continuous Drain (Id) @ 25°C	200	mA
Rds On (Max) @ Id, Vgs	10.4 @ 50mA, 4V	Ohm
Gate Charge (Qg) (Max) @ Vgs	1.43 @ 10V	nC
Input Capacitance (Ciss) (Max) @ Vds	7.5 @ 10V	pF
Power - Max	800	mW
Configuration	2 P-Channel (Dual)	—
FET Feature	Logic Level Gate	—
Operating Temperature (TJ)	150	°C
Mounting Type	Surface Mount	—
Package / Case	6-SMD, Flat Leads	—

Substitute Part Grouping Explanation

Substitution of the MCH6601-TL-E is determined by the following critical parameters:

Electrical Compatibility Requirements:

Drain to Source Voltage (Vdss) must equal or exceed 30V
Configuration must be 2 P-Channel (Dual) MOSFET array
FET Feature must support Logic Level Gate operation
Current rating must meet or exceed 200mA continuous drain current

Physical Compatibility Requirements:

Surface mount technology
Pin configuration compatible with application circuit design

The DMP3085LSD-13 from Diodes Incorporated satisfies these substitution criteria through matching voltage rating, dual P-channel configuration, logic level gate feature, and significantly higher current capability (3.9A), providing enhanced performance margin for the same voltage class.

Parameter Comparison

Parameter	MCH6601-TL-E (onsemi)	DMP3085LSD-13 (Diodes Inc.)	Unit
Drain to Source Voltage (Vdss)	30	30	V
Current - Continuous Drain (Id) @ 25°C	200	3900	mA
Rds On (Max) @ Id, Vgs	10.4 @ 50mA, 4V	70mOhm @ 5.3A, 10V	Ohm
Gate Charge (Qg) (Max) @ Vgs	1.43 @ 10V	11 @ 10V	nC
Input Capacitance (Ciss) (Max) @ Vds	7.5 @ 10V	563 @ 25V	pF
Power - Max	800	1100	mW
Configuration	2 P-Channel (Dual)	2 P-Channel (Dual)	—
FET Feature	Logic Level Gate	Logic Level Gate	—
Operating Temperature (TJ)	150	150	°C
Mounting Type	Surface Mount	Surface Mount	—
Package / Case	6-SMD, Flat Leads	8-SOIC (0.154", 3.90mm Width)	—
Product Status	Obsolete	Active	—

Engineering Selection Recommendations

The DMP3085LSD-13 is the qualified substitute for the obsolete MCH6601-TL-E based on the following engineering criteria:

Product Status Alignment: The DMP3085LSD-13 maintains active product status with Diodes Incorporated, ensuring long-term availability and supply chain continuity compared to the obsolete MCH6601-TL-E.

Compliance & Certification: Both components share identical REACH Status (REACH Unaffected) and ECCN classification (EAR99). The DMP3085LSD-13 carries RoHS3 Compliance certification, meeting modern regulatory requirements.

Electrical Performance: The substitute part exceeds the original specification across all critical parameters. The 3.9A continuous drain current provides 19.5× the current capacity of the original 200mA rating, while maintaining the same 30V voltage class and logic level gate feature. The lower on-resistance (70mOhm versus 10.4Ohm) and higher power rating (1.1W versus 800mW) indicate superior thermal and electrical performance characteristics.

Thermal Compatibility: Both components support identical maximum junction temperature (150°C), ensuring thermal design compatibility.

Package Consideration: The DMP3085LSD-13 uses an 8-SOIC package versus the 6-MCPH package of the original part. PCB layout modification is required for physical integration.

Frequently Asked Questions (FAQ)

Q: Can the DMP3085LSD-13 directly replace the MCH6601-TL-E without circuit modification?

A: Electrical substitution is valid based on matching voltage rating, dual P-channel configuration, and logic level gate operation. However, the package change from 6-MCPH to 8-SOIC requires PCB layout redesign. Pin-to-pin functional mapping must be verified against the specific application circuit.

Q: What is the significance of the higher current rating (3.9A) in the DMP3085LSD-13?

A: The substitute part provides substantially higher continuous drain current capacity than the original specification. This allows the same component to function in applications requiring higher current handling without thermal stress, while remaining backward compatible with lower current applications.

Q: Are there any compliance differences between the two parts?

A: Both components share REACH Unaffected status and EAR99 ECCN classification. The DMP3085LSD-13 includes RoHS3 Compliance certification, which is relevant for applications subject to RoHS requirements. The MCH6601-TL-E does not specify RoHS status.

Q: How do the gate charge and input capacitance differences affect circuit design?

A: The DMP3085LSD-13 exhibits higher gate charge (11nC versus 1.43nC) and significantly higher input capacitance (563pF versus 7.5pF). These parameters affect gate drive circuit design and switching speed. Applications with tight timing constraints or limited gate drive capability require evaluation of these differences.

Q: What packaging considerations apply to this substitution?

A: The original MCH6601-TL-E uses a 6-SMD flat lead package, while the DMP3085LSD-13 uses an 8-SOIC package with 0.154" (3.90mm) width. PCB footprint, trace routing, and component placement must be redesigned accordingly. The 8-SOIC package is a standard industry format with broad design tool support.

Q: Is the DMP3085LSD-13 available in tape and reel packaging?

A: Yes, the DMP3085LSD-13 is supplied in Tape & Reel (TR) format, suitable for automated assembly processes. The MCH6601-TL-E packaging format is not specified in the available data.

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