MCH6336-TL-E Equivalent & Substitute Parts

Part Overview

The MCH6336-TL-E is a P-Channel MOSFET manufactured by onsemi, rated for 12V drain-to-source voltage with 5A continuous drain current at 25°C. The device is housed in a 6-TSSOP (SC-88FL/MCPH6) surface mount package and dissipates a maximum of 1.5W. This part is classified as obsolete, making identification of equivalent and substitute components necessary for ongoing design support, maintenance, and production continuity.

Key Parameters

Parameter	Value	Unit
FET Type	P-Channel	—
Drain to Source Voltage (Vdss)	12	V
Continuous Drain Current (Id) @ 25°C	5	A
Rds On (Max) @ Id, Vgs	43	mOhm @ 3A, 4.5V
Power Dissipation (Max)	1.5	W
Operating Temperature (TJ)	150	°C
Mounting Type	Surface Mount	—
Package / Case	6-TSSOP, SC-88, SOT-363	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the MCH6336-TL-E is determined by the following critical parameters:

Channel Type & Technology: Both the main part and substitute must be P-Channel MOSFETs to maintain circuit polarity and switching characteristics.

Voltage Rating (Vdss): The substitute part must have a Vdss rating equal to or greater than 12V. A higher voltage rating provides design margin and does not compromise circuit operation in applications rated for 12V.

Current Capability (Id): The substitute must support continuous drain current equal to or greater than 5A at 25°C to ensure adequate current handling without thermal stress.

On-Resistance (Rds On): The substitute's maximum on-resistance must be compatible with the application's power dissipation and switching loss requirements. Lower on-resistance values are acceptable as they reduce power losses.

Power Dissipation: The substitute must support the thermal requirements of the application. Equal or higher power dissipation ratings are acceptable.

Mounting Type & Package Compatibility: Surface mount packages with compatible pinouts and footprints enable direct substitution on printed circuit boards.

Operating Temperature: The substitute must support the same or higher maximum junction temperature (150°C) to ensure reliability across the operating range.

The SSM6J414TU,LF meets these substitution criteria with a higher voltage rating (20V), improved current capability (6A), lower on-resistance (22.5mOhm), and active product status.

Parameter Comparison

Parameter	MCH6336-TL-E (Main Part)	SSM6J414TU,LF (Substitute)	Compatibility
Manufacturer	onsemi	Toshiba Semiconductor and Storage	Different manufacturers
FET Type	P-Channel	P-Channel	Match
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	Match
Drain to Source Voltage (Vdss)	12 V	20 V	Substitute rated higher
Continuous Drain Current (Id) @ 25°C	5 A	6 A	Substitute rated higher
Rds On (Max) @ Id, Vgs	43 mOhm @ 3A, 4.5V	22.5 mOhm @ 6A, 4.5V	Substitute has lower resistance
Vgs(th) (Max) @ Id	1.4 V @ 1mA	1 V @ 1mA	Substitute has lower threshold
Gate Charge (Qg) (Max) @ Vgs	6.9 nC @ 4.5 V	23.1 nC @ 4.5 V	Substitute has higher gate charge
Vgs (Max)	±10 V	±8 V	Main part has higher rating
Input Capacitance (Ciss) (Max) @ Vds	660 pF @ 6 V	1650 pF @ 10 V	Substitute has higher capacitance
Power Dissipation (Max)	1.5 W	1 W	Main part rated higher
Operating Temperature (TJ)	150 °C	150 °C	Match
Mounting Type	Surface Mount	Surface Mount	Match
Package / Case	6-TSSOP, SC-88, SOT-363	6-SMD, Flat Leads	Different package styles
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	Match
Product Status	Obsolete	Active	Substitute is active
REACH Status	REACH Unaffected	REACH Unaffected	Match

Engineering Selection Recommendations

Product Status Consideration: The MCH6336-TL-E is classified as obsolete, while the SSM6J414TU,LF is active. Active product status ensures ongoing availability, manufacturing support, and compliance with current regulatory standards.

Electrical Performance: The SSM6J414TU,LF provides superior electrical characteristics within the substitution criteria. The 20V Vdss rating exceeds the 12V requirement, the 6A current capability exceeds the 5A requirement, and the 22.5mOhm on-resistance is lower than the 43mOhm specification. These improvements reduce power dissipation and switching losses in the application circuit.

Regulatory Compliance: Both parts maintain REACH Unaffected status and carry EAR99 ECCN classification. The SSM6J414TU,LF includes RoHS3 compliance certification, meeting current environmental and hazardous substance directives.

Package Consideration: The MCH6336-TL-E uses a 6-TSSOP (SC-88FL/MCPH6) package, while the SSM6J414TU,LF uses a 6-SMD flat leads package (UF6). Although both are 6-pin surface mount devices, the physical footprints differ. PCB layout modifications may be required to accommodate the different package geometry.

Thermal Performance: The main part is rated for 1.5W maximum power dissipation, while the substitute is rated for 1W. In applications operating near the thermal limits of the original design, thermal analysis is necessary to confirm the substitute's adequacy.

Gate Charge & Switching Characteristics: The substitute exhibits higher gate charge (23.1nC versus 6.9nC) and input capacitance (1650pF versus 660pF). These parameters affect gate drive circuit design and switching speed. Driver circuits must be evaluated for compatibility with the increased capacitive loading.

Frequently Asked Questions (FAQ)

Q: Can the SSM6J414TU,LF directly replace the MCH6336-TL-E without circuit modifications?

A: Electrical substitution is feasible based on voltage, current, and on-resistance parameters. However, package geometry differences require PCB layout changes. Gate drive circuit evaluation is necessary due to higher gate charge and input capacitance of the substitute.

Q: Why does the substitute have a higher Vdss rating (20V vs. 12V)?

A: Higher voltage ratings provide design margin and do not degrade performance in 12V applications. The substitute operates safely at the lower voltage with improved reliability.

Q: What is the impact of the substitute's lower on-resistance (22.5mOhm vs. 43mOhm)?

A: Lower on-resistance reduces conduction losses and power dissipation. This improves thermal performance and efficiency in the application circuit.

Q: Does the higher gate charge of the substitute affect circuit operation?

A: Gate charge affects the gate drive circuit design and switching speed. The driver must supply sufficient current to charge the gate within the required switching time. Existing gate drive circuits should be evaluated for compatibility.

Q: Are there package compatibility issues between these two parts?

A: Yes. The MCH6336-TL-E uses a 6-TSSOP (SC-88FL/MCPH6) package, while the SSM6J414TU,LF uses a 6-SMD flat leads (UF6) package. PCB footprints differ and require layout modifications for substitution.

Q: What is the significance of the MCH6336-TL-E being obsolete?

A: Obsolete status indicates the part is no longer manufactured or supported by onsemi. Substitution with an active part like the SSM6J414TU,LF ensures long-term availability and access to manufacturing support.

Q: How does the substitute's lower power dissipation rating (1W vs. 1.5W) affect thermal design?

A: The substitute's 1W rating is lower than the main part's 1.5W rating. Applications operating near thermal limits require thermal analysis to confirm the substitute's adequacy in the specific circuit environment.

Q: Are both parts compliant with current environmental regulations?

A: Both parts maintain REACH Unaffected status. The substitute additionally carries RoHS3 compliance certification, meeting current environmental and hazardous substance directives.

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