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MCH3479-TL-H Equivalent & Substitute Parts
Part Overview
The MCH3479-TL-H is an N-Channel MOSFET manufactured by onsemi, rated for 20V drain-to-source voltage with 3.5A continuous drain current at 25°C. The device is packaged in SC-70FL/MCPH3 surface mount configuration and is designed for general-purpose switching applications requiring compact form factors.
This part is classified as obsolete. Identifying equivalent and substitute components is necessary to support ongoing production requirements, design revisions, and inventory management for applications currently utilizing this MOSFET.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain-to-Source Voltage (Vdss) | 20 | V |
| Continuous Drain Current (Id) @ 25°C | 3.5 | A |
| On-State Resistance (Rds On Max) @ Id, Vgs | 64 mOhm @ 1.5A, 4.5V | mOhm |
| Gate Charge (Qg Max) @ Vgs | 2.8 | nC @ 4.5V |
| Power Dissipation (Max) | 900 | mW |
| Operating Temperature (TJ Max) | 150 | °C |
| Package Type | SC-70FL/MCPH3 | 3-SMD, Flat Lead |
| Product Status | Obsolete |
Substitute Part Grouping Explanation
Substitute parts for the MCH3479-TL-H are identified based on the following electrical and mechanical parameters:
Primary Matching Criteria:
- Drain-to-Source Voltage (Vdss): 20V (exact match required)
- FET Type: N-Channel MOSFET (Metal Oxide technology)
- Mounting Type: Surface Mount
- Gate-Source Voltage (Vgs Max): ±10V or greater
- RoHS3 Compliance and MSL Level 1 rating
Secondary Compatibility Factors:
- Continuous Drain Current (Id): Minimum 2.5A at 25°C (supports primary application requirements)
- On-State Resistance (Rds On): Comparable performance within 54–65 mOhm range
- Gate Charge (Qg): Low switching charge for efficient gate drive
- Power Dissipation: Adequate thermal handling for target applications
The substitute parts listed below meet these criteria and are available in active product status with current manufacturing support.
Parameter Comparison
| Parameter | MCH3479-TL-H (Main) | RUF025N02TL | PMF63UNEX |
|---|---|---|---|
| Manufacturer | onsemi | Rohm Semiconductor | Nexperia USA Inc. |
| Product Status | Obsolete | Active | Active |
| Drain-to-Source Voltage (Vdss) | 20 V | 20 V | 20 V |
| Continuous Drain Current (Id) @ 25°C | 3.5 A | 2.5 A | 2.2 A |
| Rds On (Max) @ Id, Vgs | 64 mOhm @ 1.5A, 4.5V | 54 mOhm @ 2.5A, 4.5V | 65 mOhm @ 2A, 4.5V |
| Gate Charge (Qg Max) @ Vgs | 2.8 nC @ 4.5V | 5 nC @ 4.5V | 5.85 nC @ 4.5V |
| Vgs (Max) | ±12 V | ±10 V | ±8 V |
| Input Capacitance (Ciss Max) @ Vds | 260 pF @ 10V | 370 pF @ 10V | 289 pF @ 10V |
| Power Dissipation (Max) | 900 mW | 320 mW | 395 mW |
| Operating Temperature (TJ Max) | 150 °C | 150 °C | 150 °C |
| Package Type | SC-70FL/MCPH3 (3-SMD, Flat Lead) | TUMT3 (3-SMD, Flat Leads) | SOT-323 (SC-70, SOT-323) |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
| MSL Rating | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) |
Engineering Selection Recommendations
RUF025N02TL (Rohm Semiconductor)
The RUF025N02TL is an active product offering superior on-state resistance performance (54 mOhm) compared to the MCH3479-TL-H. This device supports 2.5A continuous drain current and maintains full compliance with ROHS3 standards and MSL Level 1 moisture sensitivity rating. The TUMT3 package provides mechanical compatibility with SC-70 footprints. This part is recommended for applications where lower conduction losses and active manufacturing support are priorities.
PMF63UNEX (Nexperia USA Inc.)
The PMF63UNEX is an active product rated for 2.2A continuous drain current with comparable on-state resistance (65 mOhm). The SOT-323 package is mechanically compatible with SC-70 footprints. This device maintains full ROHS3 compliance and MSL Level 1 rating. The PMF63UNEX is suitable for applications where the lower current rating is acceptable and active product support is required.
Both substitute parts satisfy the core electrical requirements (20V Vdss, N-Channel MOSFET, surface mount configuration) and regulatory compliance standards. Selection between these options depends on application-specific current requirements and thermal management considerations.
Frequently Asked Questions (FAQ)
Q: Can the MCH3479-TL-H be directly replaced with RUF025N02TL or PMF63UNEX?
A: Both substitute parts share the same 20V drain-to-source voltage rating, N-Channel MOSFET technology, and surface mount configuration. The TUMT3 and SOT-323 packages are mechanically compatible with SC-70 footprints. However, the lower continuous drain current ratings (2.5A and 2.2A respectively, versus 3.5A for the MCH3479-TL-H) must be verified against application requirements. Thermal dissipation characteristics differ due to lower power ratings in the substitute parts.
Q: What are the key differences in electrical performance?
A: The MCH3479-TL-H provides higher continuous drain current (3.5A) and higher power dissipation capability (900 mW). The RUF025N02TL offers lower on-state resistance (54 mOhm versus 64 mOhm) and lower gate charge (5 nC versus 2.8 nC). The PMF63UNEX provides comparable on-state resistance (65 mOhm) but with higher gate charge (5.85 nC). All three devices operate at the same maximum junction temperature (150°C).
Q: Are there package compatibility concerns?
A: The MCH3479-TL-H uses SC-70FL/MCPH3 packaging. The RUF025N02TL (TUMT3) and PMF63UNEX (SOT-323) are both compatible with SC-70 footprints. Physical dimensions and pin configurations are equivalent, allowing direct PCB layout substitution without redesign.
Q: Do all parts meet the same regulatory standards?
A: Yes. The MCH3479-TL-H, RUF025N02TL, and PMF63UNEX are all ROHS3 compliant with MSL Level 1 (Unlimited) moisture sensitivity ratings. All three parts are REACH unaffected and classified under ECCN EAR99.
Q: Which substitute part should be selected for new designs?
A: Selection depends on application current requirements. If continuous drain current requirements do not exceed 2.5A, the RUF025N02TL is recommended due to superior on-state resistance and active product status. If requirements do not exceed 2.2A, the PMF63UNEX provides an alternative with active manufacturing support. Applications requiring the full 3.5A rating of the MCH3479-TL-H may require evaluation of higher-current alternatives outside this substitute list.
Q: What is the impact of different gate charge values?
A: Gate charge (Qg) affects switching speed and gate drive power requirements. The MCH3479-TL-H has lower gate charge (2.8 nC) compared to RUF025N02TL (5 nC) and PMF63UNEX (5.85 nC). Applications with high-frequency switching or limited gate drive capability should account for these differences in circuit design.
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