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MCH3474-TL-E Equivalent & Substitute Parts
Part Overview
The MCH3474-TL-E is an N-Channel MOSFET manufactured by onsemi, rated for 30V drain-to-source voltage with 4A continuous drain current at 25°C. This device is packaged in a surface mount SC-70FL/MCPH3 configuration and is designed for general-purpose switching applications requiring compact form factors.
The MCH3474-TL-E is classified as obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications currently utilizing this component.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| FET Type | N-Channel | — |
| Drain to Source Voltage (Vdss) | 30 | V |
| Continuous Drain Current (Id) @ 25°C | 4 | A |
| Rds On (Max) @ Id, Vgs | 50 mOhm @ 2A, 4.5V | — |
| Gate Charge (Qg) @ Vgs | 4.7 nC @ 4.5V | — |
| Input Capacitance (Ciss) @ Vds | 430 pF @ 10V | — |
| Power Dissipation (Max) | 1 | W |
| Operating Temperature (TJ) | 150 | °C |
| Mounting Type | Surface Mount | — |
| Package / Case | 3-SMD, Flat Lead | — |
| Vgs (Max) | ±12 | V |
Substitute Part Grouping Explanation
Substitution of the MCH3474-TL-E is determined by electrical and mechanical compatibility across the following critical parameters:
Electrical Compatibility Criteria:
- FET Type: N-Channel topology must be maintained
- Drain to Source Voltage (Vdss): Minimum 30V rating required
- Continuous Drain Current (Id): Minimum 4A at 25°C required
- Rds On (Max): Must not exceed 50 mOhm at specified gate voltage
- Gate Charge (Qg): Lower values preferred for switching efficiency
- Input Capacitance (Ciss): Lower values preferred for gate drive requirements
- Power Dissipation: Minimum 1W at ambient temperature
- Operating Temperature: Minimum 150°C junction temperature required
- Vgs (Max): ±12V gate voltage rating required
Mechanical Compatibility Criteria:
- Mounting Type: Surface mount configuration required
- Package compatibility: Devices must be compatible with existing PCB layouts and assembly processes
The PMPB33XN,115 from NXP USA Inc. meets all electrical and mechanical substitution criteria for the MCH3474-TL-E.
Parameter Comparison
| Parameter | MCH3474-TL-E (onsemi) | PMPB33XN,115 (NXP USA Inc.) | Unit |
|---|---|---|---|
| FET Type | N-Channel | N-Channel | — |
| Drain to Source Voltage (Vdss) | 30 | 30 | V |
| Continuous Drain Current (Id) @ 25°C | 4 | 4.3 | A |
| Rds On (Max) @ Id, Vgs | 50 mOhm @ 2A, 4.5V | 47 mOhm @ 4.3A, 4.5V | — |
| Gate Charge (Qg) @ Vgs | 4.7 nC @ 4.5V | 7.6 nC @ 4.5V | — |
| Input Capacitance (Ciss) @ Vds | 430 pF @ 10V | 505 pF @ 15V | — |
| Power Dissipation (Max) | 1 (Ta) | 1.5 (Ta), 8.3 (Tc) | W |
| Operating Temperature (TJ) | 150 | −55 to 150 | °C |
| Mounting Type | Surface Mount | Surface Mount | — |
| Vgs (Max) | ±12 | ±12 | V |
| Product Status | Obsolete | Active | — |
Engineering Selection Recommendations
The PMPB33XN,115 is a direct electrical substitute for the MCH3474-TL-E. The substitute part meets or exceeds all critical electrical parameters required for functional equivalence:
- Drain-to-source voltage rating is identical at 30V
- Continuous drain current is higher at 4.3A versus 4A, providing margin
- On-resistance is lower at 47 mOhm, improving efficiency
- Power dissipation capability is superior at 1.5W (Ta) and 8.3W (Tc)
- Operating temperature range is extended to −55°C to 150°C
The PMPB33XN,115 carries Active product status, ensuring ongoing availability and manufacturer support. Both devices are classified under ECCN EAR99 and HTSUS 8541.29.0095, maintaining regulatory compliance equivalence.
Package differences exist between the two devices: the MCH3474-TL-E uses SC-70FL/MCPH3 (3-SMD, Flat Lead) while the PMPB33XN,115 uses DFN1010B-6 (6-XFDFN Exposed Pad). PCB layout and assembly process modifications are required to accommodate the different package footprint.
Frequently Asked Questions (FAQ)
Q: Can the PMPB33XN,115 directly replace the MCH3474-TL-E without circuit modifications?
A: The PMPB33XN,115 is electrically compatible and meets all functional requirements. However, the package footprint differs (3-SMD versus 6-XFDFN), requiring PCB layout redesign and assembly process updates. No circuit modifications are necessary if the new package is accommodated.
Q: What are the key electrical advantages of the PMPB33XN,115 over the MCH3474-TL-E?
A: The PMPB33XN,115 provides higher continuous drain current (4.3A versus 4A), lower on-resistance (47 mOhm versus 50 mOhm), and significantly higher power dissipation capability (1.5W at Ta, 8.3W at Tc versus 1W at Ta). These characteristics improve thermal performance and efficiency in switching applications.
Q: Why is the MCH3474-TL-E classified as obsolete?
A: The MCH3474-TL-E is listed as obsolete by the manufacturer. The PMPB33XN,115 is an active product from NXP USA Inc., ensuring continued supply chain availability and manufacturer technical support.
Q: Are there any regulatory or compliance differences between these parts?
A: Both devices share identical ECCN (EAR99) and HTSUS (8541.29.0095) classifications. Regulatory compliance is equivalent between the two parts.
Q: What is the impact of the different package types on thermal performance?
A: The PMPB33XN,115 features an exposed pad in the DFN1010B-6 package, which enhances thermal dissipation compared to the SC-70FL/MCPH3 package. This contributes to the higher power dissipation rating at case temperature (Tc) of 8.3W.
Q: Are gate drive requirements different between these devices?
A: Gate charge is higher in the PMPB33XN,115 (7.6 nC versus 4.7 nC), requiring slightly more gate drive energy. Input capacitance is also higher (505 pF versus 430 pF). Gate drive circuits may require minor adjustments to accommodate these differences, though standard gate drivers typically handle both specifications.
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