MCH3374-TL-E Equivalent & Substitute Parts

Part Overview

The MCH3374-TL-E is a P-Channel MOSFET manufactured by onsemi, rated for 12V drain-to-source voltage with 3A continuous drain current at 25°C. This device is packaged in a 3-SMD flat lead SC-70FL/MCPH3 surface mount configuration and is designed for applications requiring low-side P-channel switching and control.

The MCH3374-TL-E carries an Obsolete product status. Identification of equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for systems utilizing this component.

Substiute Parts

MCH3374-TL-E
onsemiIn Stock: 2082MCH3374-TL-E Datasheet
MCH3374-TL-E
Current Part
RZF030P01TL
Rohm SemiconductorIn Stock: 50257RZF030P01TL Datasheet
RZF030P01TL
MFR Recommended

Key Parameters

Parameter Value Unit
FET Type P-Channel
Drain to Source Voltage (Vdss) 12 V
Current - Continuous Drain (Id) @ 25°C 3 A
Rds On (Max) @ Id, Vgs 70 mOhm @ 1.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs 5.6 nC @ 4.5V
Vgs (Max) ±8 V
Input Capacitance (Ciss) (Max) @ Vds 405 pF @ 6V
Power Dissipation (Max) 1 W
Mounting Type Surface Mount
Package / Case 3-SMD, Flat Lead
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the MCH3374-TL-E is determined by electrical and mechanical parameter compatibility within the P-Channel MOSFET category. The following parameters establish the substitution criteria:

Electrical Parameters:

  • FET Type: P-Channel (required match)
  • Drain to Source Voltage (Vdss): 12V minimum
  • Continuous Drain Current (Id): 3A minimum at 25°C
  • Gate-Source Voltage (Vgs) Rating: ±8V minimum
  • On-State Resistance (Rds On): 70 mOhm or lower at specified conditions
  • Gate Charge (Qg): 5.6 nC or lower
  • Input Capacitance (Ciss): 405 pF or lower

Mechanical Parameters:

  • Mounting Type: Surface Mount (required match)
  • Package Configuration: 3-SMD, Flat Lead (required match)

Compliance Parameters:

  • RoHS3 Compliance (required match)
  • Moisture Sensitivity Level: 1 (Unlimited) or equivalent

The RZF030P01TL from Rohm Semiconductor meets all established substitution criteria and is classified as a manufacturer-recommended equivalent.

Parameter Comparison

Parameter MCH3374-TL-E (onsemi) RZF030P01TL (Rohm) Compatibility
FET Type P-Channel P-Channel Match
Drain to Source Voltage (Vdss) 12 V 12 V Match
Current - Continuous Drain (Id) @ 25°C 3 A 3 A Match
Rds On (Max) @ Id, Vgs 70 mOhm @ 1.5A, 4.5V 39 mOhm @ 3A, 4.5V Substitute Superior
Gate Charge (Qg) (Max) @ Vgs 5.6 nC @ 4.5V 18 nC @ 4.5V Substitute Higher
Vgs (Max) ±8 V ±10 V Substitute Superior
Input Capacitance (Ciss) (Max) @ Vds 405 pF @ 6V 1860 pF @ 6V Substitute Higher
Power Dissipation (Max) 1 W 800 mW Substitute Lower
Mounting Type Surface Mount Surface Mount Match
Package / Case 3-SMD, Flat Lead 3-SMD, Flat Leads Match
RoHS Status ROHS3 Compliant ROHS3 Compliant Match
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) Match
Product Status Obsolete Active Substitute Current

Engineering Selection Recommendations

The RZF030P01TL is a direct substitute for the MCH3374-TL-E based on the following engineering criteria:

Electrical Compatibility: Both devices are P-Channel MOSFETs with identical 12V Vdss and 3A continuous drain current ratings. The RZF030P01TL demonstrates superior on-state resistance performance (39 mOhm versus 70 mOhm), lower maximum gate-source voltage stress (±10V versus ±8V), and equivalent surface mount packaging in 3-SMD flat lead configuration.

Compliance and Certification: Both parts are ROHS3 compliant and carry MSL 1 (Unlimited) moisture sensitivity ratings, ensuring compatibility with standard manufacturing and storage protocols.

Supply Chain Status: The MCH3374-TL-E is classified as Obsolete with limited inventory availability. The RZF030P01TL is an Active product with substantial inventory (50,200 pieces), providing reliable long-term supply chain support.

Functional Equivalence: The RZF030P01TL operates within all electrical parameter ranges required by the MCH3374-TL-E application envelope. The substitute part's lower on-state resistance and higher gate-source voltage rating provide operational margin in switching and control applications.

Frequently Asked Questions (FAQ)

Q: Can the RZF030P01TL directly replace the MCH3374-TL-E in existing designs?

A: Yes. Both devices are P-Channel MOSFETs with matching 12V Vdss and 3A continuous drain current ratings. The RZF030P01TL is packaged in an identical 3-SMD flat lead surface mount configuration and is pin-compatible for PCB assembly without layout modification.

Q: What are the key electrical differences between these parts?

A: The RZF030P01TL exhibits lower on-state resistance (39 mOhm at 3A versus 70 mOhm at 1.5A), higher gate charge (18 nC versus 5.6 nC), higher input capacitance (1860 pF versus 405 pF), and higher gate-source voltage rating (±10V versus ±8V). These differences result in improved current handling capability and reduced conduction losses in the substitute part.

Q: Are there package or mounting differences?

A: No. Both the MCH3374-TL-E and RZF030P01TL use identical 3-SMD flat lead surface mount packaging. No PCB layout or assembly process modifications are required for substitution.

Q: What is the significance of the product status difference?

A: The MCH3374-TL-E is Obsolete, indicating onsemi has discontinued production and support. The RZF030P01TL is Active, meaning Rohm Semiconductor continues manufacturing and provides ongoing technical support. Active status ensures long-term availability and supply chain reliability.

Q: Are both parts RoHS3 compliant?

A: Yes. Both the MCH3374-TL-E and RZF030P01TL are ROHS3 compliant and carry MSL 1 (Unlimited) moisture sensitivity ratings, meeting current environmental and manufacturing standards.

Q: How do the gate charge and input capacitance differences affect circuit performance?

A: The RZF030P01TL has higher gate charge (18 nC versus 5.6 nC) and higher input capacitance (1860 pF versus 405 pF). These parameters affect gate drive circuit design and switching speed. Applications with tight switching frequency or gate drive current constraints should evaluate these differences against specific circuit requirements.

Q: Is the lower power dissipation rating of the RZF030P01TL a limitation?

A: No. The RZF030P01TL has a lower maximum power dissipation rating (800 mW versus 1W), but this is offset by its superior on-state resistance (39 mOhm versus 70 mOhm), which reduces conduction losses in typical operating conditions. The substitute part is suitable for applications within the 3A continuous drain current specification.

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