MCH3145-TL-E Equivalent & Substitute Parts

Part Overview

The MCH3145-TL-E is a PNP bipolar junction transistor manufactured by onsemi, rated for 50V collector-emitter breakdown voltage and 2A maximum collector current. This device is packaged in a 3-MCPH (SC-70, SOT-323) surface mount configuration and is designed for general-purpose switching and amplification applications with a maximum power dissipation of 800mW.

The MCH3145-TL-E carries an Obsolete product status. Identification of equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications currently utilizing this transistor.

Substiute Parts

MCH3145-TL-E
onsemiIn Stock: 3306MCH3145-TL-E Datasheet
MCH3145-TL-E
Current Part
NSS60200LT1G
onsemiIn Stock: 18285NSS60200LT1G Datasheet
NSS60200LT1G
Similar

Key Parameters

Parameter Value Unit
Transistor Type PNP
Current - Collector (Ic) Max 2 A
Voltage - Collector Emitter Breakdown (Max) 50 V
Power - Max 800 mW
Frequency - Transition 420 MHz
DC Current Gain (hFE) Min @ Ic, Vce 200 @ 100mA, 2V
Vce Saturation (Max) @ Ib, Ic 330mV @ 50mA, 1A
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the MCH3145-TL-E is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

  • Transistor type must be PNP
  • Maximum collector current must be greater than or equal to 2A
  • Maximum collector-emitter breakdown voltage must be greater than or equal to 50V
  • Maximum power dissipation must support the application requirements
  • DC current gain characteristics must be compatible with circuit design

Mechanical Compatibility Criteria:

  • Surface mount packaging configuration
  • Physical footprint compatibility with SC-70, SOT-323, or equivalent small-outline packages
  • Lead spacing and dimensions suitable for existing PCB layouts

Compliance and Certification:

  • RoHS3 compliance required
  • MSL rating of 1 (Unlimited) preferred for handling and storage flexibility

The NSS60200LT1G meets these substitution criteria with equivalent or superior electrical ratings and maintains compliance with applicable standards.

Parameter Comparison

Parameter MCH3145-TL-E NSS60200LT1G Notes
Transistor Type PNP PNP Identical
Current - Collector (Ic) Max 2 A 2 A Identical
Voltage - Collector Emitter Breakdown (Max) 50 V 60 V NSS60200LT1G rated higher
Power - Max 800 mW 460 mW MCH3145-TL-E rated higher
Frequency - Transition 420 MHz 100 MHz MCH3145-TL-E rated higher
DC Current Gain (hFE) Min 200 @ 100mA, 2V 150 @ 500mA, 2V Different test conditions
Vce Saturation (Max) 330mV @ 50mA, 1A 220mV @ 200mA, 2A NSS60200LT1G lower saturation voltage
Mounting Type Surface Mount Surface Mount Identical
Package / Case SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 Different package designations; physical compatibility requires verification
RoHS Status ROHS3 Compliant ROHS3 Compliant Identical
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) Identical
Product Status Obsolete Active NSS60200LT1G actively manufactured

Engineering Selection Recommendations

The NSS60200LT1G is identified as a direct substitute for the MCH3145-TL-E based on the following factors:

Electrical Compatibility: The NSS60200LT1G maintains the same maximum collector current rating of 2A and exceeds the minimum collector-emitter breakdown voltage requirement with a 60V rating compared to the MCH3145-TL-E's 50V specification. Both devices are PNP transistors suitable for identical circuit topologies.

Compliance Status: Both the MCH3145-TL-E and NSS60200LT1G carry ROHS3 compliance certification and MSL rating of 1 (Unlimited), ensuring compatibility with current manufacturing and handling standards.

Product Availability: The NSS60200LT1G maintains Active product status with substantial inventory availability (18,185 pieces), whereas the MCH3145-TL-E is Obsolete. This substitution ensures continued access to functionally equivalent components for production and repair applications.

Package Considerations: The MCH3145-TL-E is supplied in 3-MCPH packaging (SC-70, SOT-323), while the NSS60200LT1G is supplied in SOT-23-3 (TO-236) packaging. Physical footprint verification against PCB layout specifications is required prior to implementation.

Frequently Asked Questions (FAQ)

Q: Can the NSS60200LT1G directly replace the MCH3145-TL-E in all applications?

A: The NSS60200LT1G meets the electrical requirements for substitution with equivalent collector current and superior breakdown voltage ratings. However, package footprint differences between SC-70 (3-MCPH) and SOT-23-3 (TO-236) require verification against PCB layout specifications. Pinout compatibility must be confirmed before implementation.

Q: What are the key differences between these two transistors?

A: The primary differences are: (1) Collector-emitter breakdown voltage: NSS60200LT1G is rated 60V versus MCH3145-TL-E at 50V; (2) Maximum power dissipation: MCH3145-TL-E is rated 800mW versus NSS60200LT1G at 460mW; (3) Transition frequency: MCH3145-TL-E is rated 420MHz versus NSS60200LT1G at 100MHz; (4) Package type: MCH3145-TL-E uses SC-70 (3-MCPH) versus NSS60200LT1G uses SOT-23-3 (TO-236); (5) Product status: MCH3145-TL-E is Obsolete while NSS60200LT1G is Active.

Q: Why is the MCH3145-TL-E listed as Obsolete?

A: The MCH3145-TL-E carries an Obsolete product status designation from the manufacturer. This status indicates the device is no longer in active production. The NSS60200LT1G, with Active status, represents the current manufacturing equivalent.

Q: Are there any compliance or certification concerns with substitution?

A: Both devices carry identical compliance certifications: ROHS3 compliance and MSL rating of 1 (Unlimited). No compliance barriers exist for substitution from a regulatory or environmental standpoint.

Q: What should be verified before implementing the NSS60200LT1G as a substitute?

A: Verification requirements include: (1) PCB footprint compatibility with SOT-23-3 (TO-236) package dimensions; (2) Pinout alignment with existing circuit connections; (3) Circuit performance validation under the NSS60200LT1G's electrical specifications, particularly the lower maximum power dissipation (460mW versus 800mW) and reduced transition frequency (100MHz versus 420MHz).

Q: Is the NSS60200LT1G suitable for high-frequency applications?

A: The NSS60200LT1G is rated for 100MHz transition frequency, which is lower than the MCH3145-TL-E's 420MHz rating. Applications requiring operation above 100MHz may require alternative component selection.

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